US4407710A
Expired / Lapsed
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Hybrid method of making an amorphous silicon P-I-N semiconductor device
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1981-10-15
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Granted: 1983-10-04
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Expires: 2001-10-15
Abstract
Abstract The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.
Inventors
- 👤 Theodore D. Moustakas
- 👤 Don L. Morel
- 👤 Benjamin Abeles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:38
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
128 words
A method for producing a hydrogenated amorphous silicon PIN photovoltaic device exhibiting increased blue photoresponse, said method comprising the steps of: providing a substrate having at least a region of a first electroconductive material which forms an ohmic contact to n-doped amorphous silicon; depositing a layer of n-doped hydrogenated amorphous silicon onto said ohmic contact; depositing a layer of undoped, intrinsic hydrogenated amorphous silicon onto said n-doped layer by means of glow discharge decomposition of silane; reactively sputter depositing a layer of p-doped hydrogenated amorphous silicon onto said intrinsic layer, said p-doped layer forming a semiconductor junction with said intrinsic layer and having an optical gap greater than 1.8 ev; depositing a layer of a second electroconductive material onto said p-layer, said material forming an ohmic contact thereto.
Claim 2
Independent Claim
128 words
A method for producing a hydrogenated amorphous silicon PIN photovoltaic device exhibiting increased blue photoresponse, said method comprising the steps of: providing a substrate having at least a region of a first electroconductive material which forms an ohmic contact to n-doped amorphous silicon; depositing a layer of n-doped hydrogenated amorphous silicon onto said ohmic contact; depositing a layer of undoped, intrinsic hydrogenated amorphous silicon onto said n-doped layer by means of glow discharge decomposition of silane; reactively sputter depositing a layer of p-doped hydrogenated amorphous silicon onto said intrinsic layer, said p-doped layer forming a semiconductor junction with said intrinsic layer and having an optical gap greater than 1.8 ev; depositing a layer of a second electroconductive material onto said p-layer, said material forming an ohmic contact thereto.
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein said step of depositing an n-doped layer comprises reactively sputtering a silicon target in partial pressures of at least hydrogen, argon and phosphine.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein said partial pressure of hydrogen ranges from about 0.5 mTorr to about 2.0 mTorr.
Claim 5
Dependent Claim
20 words
The method of claim 2 wherein said partial pressure of argon ranges from about 3 mTorr to about 15 mTorr.
Claim 6
Dependent Claim
21 words
The method of claim 2 wherein said partial pressure of phosphine ranges from about 5×10 -6 Torr to 5×10 -5 Torr.
Claim 7
Dependent Claim
27 words
The method of claim 2 wherein said n-doped layer is sputter deposited from a polycrystalline silicon target situated a distance of about 4.5 cm from said substrates.
Claim 8
Dependent Claim
26 words
The method of claim 6 wherein said substrates are DC biased during said depositing at a voltage ranging from about 0 volts to about +100 volts.
Claim 9
Dependent Claim
23 words
The method of claim 2 wherein said n-doped layer is deposited to a thickness ranging from about 100 Angstroms to about 1000 Angstroms.
Claim 10
Dependent Claim
30 words
The method of claim 1 wherein said n-doped layer is deposited by glow discharge decomposition of silane containing an amount of phosphine sufficient to dope said hydrogenated amorphous silicon n-type.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein said silane contains 0.1 to 1% phosphine.
Claim 12
Dependent Claim
21 words
The method of claim 1 wherein said p-doped layer is reactively sputter deposited in partial pressures of hydrogen, argon and diborane.
Claim 13
Dependent Claim
20 words
The method of claim 11 wherein said partial pressure of hydrogen ranges from about 0.5 mTorr to about 2.0 mTorr.
Claim 14
Dependent Claim
20 words
The method of claim 11 wherein said partial pressure of argon ranges from about 3 mTorr to about 15 mTorr.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein said partial pressure of diborane ranges from about 5×10 -6 Torr to 5×10 -5 Torr.
Claim 16
Dependent Claim
53 words
The method of claim 11 wherein said substrates are biased during said step of depositing the p-layer at a DC voltage ranging from about 0 volts to about +100 volts to selectably control the optical band gap value of said p layer in the range from about 1.8 ev to about 2.0 ev.
Claim 17
Dependent Claim
20 words
The method of claim 11 wherein said p-doped layer ranges in thickness from about 80 angstroms to about 200 angstroms.
Claim 18
Dependent Claim
15 words
The method of claim 1 wherein said second electroconductive layer comprises a semi-transparent conductive oxide.
Claim 19
Dependent Claim
12 words
The method of claim 17 wherein said oxide comprises indium tin oxide.
Claim 20
Dependent Claim
13 words
The method of claim 18 wherein said indium tin oxide is sputter deposited.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-03 | 1987-04-04 | 1987-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-03 | 1991-04-04 | 1991-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-03 | 1995-04-04 | 1995-10-04 | $7700.00 | Window Closed / Lapsed |