Patent US4983548A successfully refreshed from Google Patents.
US4983548A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a semiconductor device including removal of electric charges
Assignee: Fujitsu VLSI Ltd
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Filing: 1990-05-16
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Granted: 1991-01-08
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Expires: 2010-05-16
Abstract
Abstract A method of fabricating a semiconductor device comprises steps of accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground, and removing the film of the volatile organic solvent by evaporating the solvent.
Inventors
- 👤 Masaaki Uno
- 👤 Masanori Kobayashi
- 👤 Kazushi Nakashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:19
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/10; H10P72/19; H10P72/1924; H10P72/1926; H10P72/1928; H10P72/1911; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
114 words
A method of fabricating a semiconductor device, comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material; forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground; and removing the film of the volatile organic solvent by evaporating the solvent.
Claim 2
Independent Claim
114 words
A method of fabricating a semiconductor device, comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material; forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground; and removing the film of the volatile organic solvent by evaporating the solvent.
Claim 3
Dependent Claim
37 words
A method as claimed in claim 1 in which said film of the volatile solvent is formed by dipping the substrate and the container in a pool of the volatile organic solvent and subsequently lifting up therefrom.
Claim 4
Dependent Claim
37 words
A method as claimed in claim 1 in which the film of the volatile organic solvent is formed by condensing a vapor of the volatile organic solvent on the entire surface of the substrate and the container.
Claim 5
Dependent Claim
27 words
A method as claimed in claim 1 in which said volatile organic solvent comprises an organic solvent which causes an excellent wetting when contacted with the container.
Claim 6
Dependent Claim
25 words
A method as claimed in claim 4 in which said volatile organic solvent is selected from a group consisting of isopropyl alcohol, ethylalcohol and trichloroethylene.
Claim 7
Dependent Claim
26 words
A method as claimed in claim 1 in which said container is formed of a material selected from a group consisted of perfluoroalcoxy resin and polyprolynene.
Claim 8
Independent Claim
105 words
A method of fabricating a semiconductor device comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated, in a container of an electrically insulating material; cleaning the substrate together with the container in a purified water; dipping the container, after the step of cleaning in the purified water, together with the substrate accommodated therein, into a pool of a volatile organic solvent held electrically at the ground voltage level; removing the substrate together with the container from the pool of the volatile organic solvent; and removing the volatile organic solvent from the substrate and the container by evaporating the solvent.
Claim 9
Independent Claim
105 words
A method of fabricating a semiconductor device comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated, in a container of an electrically insulating material; cleaning the substrate together with the container in a purified water; dipping the container, after the step of cleaning in the purified water, together with the substrate accommodated therein, into a pool of a volatile organic solvent held electrically at the ground voltage level; removing the substrate together with the container from the pool of the volatile organic solvent; and removing the volatile organic solvent from the substrate and the container by evaporating the solvent.
Claim 10
Independent Claim
116 words
A method of fabricating a semiconductor device on a substrate comprising a step of holding the substrate in an environment containing dusts, said method comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material, said container being connected to the ground by an electrically conductive means; and exposing the substrate together with the container accommodating the substrate, prior to the step of holding the substrate in the environment containing dusts, to an atmosphere containing the volatile organic solvent while maintaining the connection to the ground, so that electric charges on the substrate and the container are eliminated therefrom by flowing to the ground.
Claim 11
Independent Claim
116 words
A method of fabricating a semiconductor device on a substrate comprising a step of holding the substrate in an environment containing dusts, said method comprising steps of: accommodating a substrate on which the semiconductor device is to be fabricated in a container of an electrically insulating material, said container being connected to the ground by an electrically conductive means; and exposing the substrate together with the container accommodating the substrate, prior to the step of holding the substrate in the environment containing dusts, to an atmosphere containing the volatile organic solvent while maintaining the connection to the ground, so that electric charges on the substrate and the container are eliminated therefrom by flowing to the ground.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |