Drying method for semiconductor wafer

Abstract

Abstract PURPOSE:To prevent the adhesion of pollutants by a method wherein a semiconductor wafer after washing it by water is immersed in alcohol, and dried with isopropyl alcohol vapor or freon vapor or by means of spin. CONSTITUTION:A cohesion adhering phenomenon of organic matter happens because water is repelled and waterdrops are easy to be formed in concave portions when the surface of a wafer is hydrophobic. Thus, it is preferable that the wafer is washed by water and immersed in alcohol, waterdrops on the surface are replaced with alcohol, and the whole surface is rapidly dried under a condition that is moistened with alcohol. As drying methods, drying by isopropyl alcohol vapor is optimum, but drying by freon vapor or drying by means of spin is also effective. As alcohol after wahsing by water, isopropyl alcohol and ethyl alcohol are adequate, and methyl alcohol easy to volatilize is inadequate. This constitution can improve the characteristics of a semiconductor device because pollution due to impurities is prevented.

Inventors

• 👤 Fumio Kiyozumi
• 👤 Masayoshi Ino

Bibliographic Details