US4186032A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for cleaning and drying semiconductors
Assignee: RCA Corp
•
Filing: 1977-09-02
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Granted: 1980-01-29
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Expires: 1997-09-02
Abstract
Abstract A semiconductor wafer is cleansed of loose foreign surface matter and chemical impurities near the surface in an apparatus which passes superheated steam over the wafer. Condensate is permitted to form and drip off the wafer. After rising above 100° C. the wafer becomes dry, and is removed from the apparatus and then permitted to cool.
Inventors
- 👤 William E. Ham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:25
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; C; C30; C30B; C30B33/00; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
A method for cleaning and drying a surface of a semiconductor wafer comprising: (a) providing a semiconductor wafer at an initial temperature below 100° C. and above 0° C.; (b) placing the wafer against a holder having a low thermal mass, the holder having an inclined surface adapted to receive the wafer and adapted for the passage of cooling fluid therethrough; (c) passing superheated steam over a surface of the wafer; (d) condensing a portion of the superheated steam on the surface whereby a water condensate is formed; (e) dripping the condensate from the inclined wafer for a preselected time; (f) raising the temperature of the wafer above 100° C.; and (g) removing the wafer to an environment below 100° C. after all water adjacent the wafer is evaporated.
Claim 2
Independent Claim
129 words
A method for cleaning and drying a surface of a semiconductor wafer comprising: (a) providing a semiconductor wafer at an initial temperature below 100° C. and above 0° C.; (b) placing the wafer against a holder having a low thermal mass, the holder having an inclined surface adapted to receive the wafer and adapted for the passage of cooling fluid therethrough; (c) passing superheated steam over a surface of the wafer; (d) condensing a portion of the superheated steam on the surface whereby a water condensate is formed; (e) dripping the condensate from the inclined wafer for a preselected time; (f) raising the temperature of the wafer above 100° C.; and (g) removing the wafer to an environment below 100° C. after all water adjacent the wafer is evaporated.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-28 | 1983-07-30 | 1984-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-28 | 1987-07-30 | 1988-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-28 | 1991-07-30 | 1992-01-29 | $7700.00 | Window Closed / Lapsed |