Power semiconductor component with switch-off facility

Claim 1

A power semiconductor component with switch-off facility, comprising: a plurality of unit cells arranged next to each other and connected in parallel in a semiconductor substrate between an anode and a cathode; each of said unit cells constructed as an MOS-controlled thyristor (MCT=MOS Controlled Thyristor) which can be switched off by means of a field-effect-controlled short circuit; and means for ensuring the field-effect-controlled switching-on of the component; wherein: said means for ensuring means comprise further unit cells which are arranged between the MCT unit cells and are connected in parallel with the latter; each of the further unit cells has the structure of a bipolar transistor with insulated gate (IGBT=Insulated Gate Bipolar Transistor); each MCT unit cell comprises, between the anode (A) and the cathode (K), a layer sequence composed of a heavily-doped emitter layer of a first conductivity-type, a medium-doped base layer of a second conductivity-type, a medium-doped base layer of the first conductivity-type, and a heavily-doped emitter region of the second conductivity-type with laterally adjacent medium-doped channel regions of the second conductivity-type and embedded heavily-doped source regions of the first conductivity-type; in the MCT unit cells, the source regions, the channel regions and the base layer of the first conductivity-type emerge next to each other at the cathode-side surface of the semiconductor substrate and in each case form a first conductivity-type-channel MOSFET with an insulated gate electrode situated above it; each IGBT unit cell comprises, between the anode and the cathode a layer sequence composed of a heavily-doped emitter layer of the first conductivity-type, a medium-doped base layer of the second conductivity-type and a heavily-doped region of the first conductivity-type with laterally adjacent medium-doped channel regions of the first conductivity-type and embedded heavily-doped source regions of the second conductivity-type; in the IGBT unit cells, the source regions, the channel regions and the second conductivity-type base layer emerge next to each other at the cathode-side surface of the semiconductor substrate and in each case form a second conductivity-type-channel MOSFET with an insulated gate electrode situated above it; and the first conductivity-type emitter layers and the second conductivity-type base layers of both elementary cells are in each case part of a common first conductivity-type emitter layer or second conductivity-type base layer respectively extending laterally over the semiconductor substrate.