Patent US4959329A successfully refreshed from Google Patents.
US4959329A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-10-24
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Granted: 1990-09-25
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Expires: 2009-10-24
Abstract
Abstract The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.
Inventors
- 👤 Tatsuo Okamoto
- 👤 Akihiko Ohsaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/927
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
183 words
A method of manufacturing a semiconductor device, said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to implant oxygen ions or nitrogen ions through said first insulating layer into a region closed to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; a fifth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of said mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; and a six step of removing said mask, then and thereafter forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
Claim 2
Independent Claim
183 words
A method of manufacturing a semiconductor device, said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to implant oxygen ions or nitrogen ions through said first insulating layer into a region closed to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; a fifth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of said mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; and a six step of removing said mask, then and thereafter forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
Claim 3
Independent Claim
181 words
A method of manufacturing a semiconductor device, said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of saId mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; a fifth step of utilizing said mask to implant oxygen ions or nitrogen ions through saId contact hole into a region close to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; and a sixth step of removing said mask and thereafter forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
Claim 4
Independent Claim
181 words
A method of manufacturing a semiconductor device, said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of saId mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; a fifth step of utilizing said mask to implant oxygen ions or nitrogen ions through saId contact hole into a region close to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; and a sixth step of removing said mask and thereafter forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
Claim 5
Independent Claim
178 words
A method of manufacturing a semiconductor device, so said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of said mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; a fifth step of removing said mask and thereafter implanting oxygen ions or nitrogen ions through said contact hole into a region close to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; and a sixth step of forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
Claim 6
Independent Claim
178 words
A method of manufacturing a semiconductor device, so said method comprising: a first step of forming a second semiconductor layer of second conductivity type on a first semiconductor layer of first conductivity type; a second step of forming a first insulating layer on said second semiconductor layer; a third step of forming a mask having an opening at a specified position on said first insulating layer; a fourth step of utilizing said mask to remove by etching a portion of said first insulating layer which corresponds to said opening of said mask so that a surface of said second semiconductor layer is exposed, thereby forming a contact hole; a fifth step of removing said mask and thereafter implanting oxygen ions or nitrogen ions through said contact hole into a region close to a boundary of said first and second semiconductor layers, thereby forming a second insulating layer; and a sixth step of forming a conductive layer on said first insulating layer so that the conductive layer is electrically connected to said second semiconductor layer through said contact hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-09-24 | 1994-03-26 | 1994-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-24 | 1998-03-26 | 1998-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-24 | 2002-03-26 | 2002-09-25 | $7700.00 | Window Closed / Lapsed |