Patent US4954867A successfully refreshed from Google Patents.
US4954867A
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US
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Semiconductor device with silicon oxynitride over refractory metal gate electrode in LDD structure
Assignee: Seiko Instruments Inc
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Filing: 1988-06-01
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Granted: 1990-09-04
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Expires: 2008-06-01
Abstract
Abstract A semiconductor device uses a high melting point metal such as tungsten, molybdenum, etc. at its gate electrode and wirings for higher operation speed. In particular, the top and the side of the gate electrode and wirings are covered by a layer of silicon oxynitride whereby the gate electrode and the wiring are protected from oxidation and deterioration which may be cause by heat treatment in an oxidative atmosphere and ion implantation.
Inventors
- 👤 Takashi Hosaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/60; H10D64/66; H10D64/665; H10D64/671; H10D64/675; H10P; H10P14/00; H10P14/60; H10P14/61; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A semiconductor device comprising: a silicon substrate; an insulation layer formed on said silicon substrate; a gate electrode composed of high melting point metal provided on said insulation layer; first source and drain regions provided in said substrate and spaced apart by a first channel region defined substantially by the width of said gate electrode; at least one layer of silicon oxynitride covering the top and each side of said gate electrode; and second source and drain regions provided in said substrate and spaced apart by a second channel region defined substantially by the combined widths of said gate electrode and said silicon oxynitride layer.
Claim 2
Dependent Claim
105 words
A semiconductor device comprising: a silicon substrate; an insulation layer formed on said silicon substrate; a gate electrode composed of high melting point metal provided on said insulation layer; first source and drain regions provided in said substrate and spaced apart by a first channel region defined substantially by the width of said gate electrode; at least one layer of silicon oxynitride covering the top and each side of said gate electrode; and second source and drain regions provided in said substrate and spaced apart by a second channel region defined substantially by the combined widths of said gate electrode and said silicon oxynitride layer.
Claim 3
Dependent Claim
32 words
A semiconductor device as defined in claim 1, wherein said gate electrode includes a wiring connected thereto with at least one layer of silicon oxynitride covering the top and each side thereof.
Claim 4
Dependent Claim
19 words
A semiconductor device as defined in claim 1, wherein said silicon oxynitride layer is a chemical vapor deposited layer.
Claim 5
Dependent Claim
19 words
A semiconductor device as defined in claim 2, wherein said silicon oxynitride layer is a chemical vapor deposited layer.
Claim 6
Dependent Claim
15 words
The semiconductor device of claim 1, in which said gate electrode is formed of molybdenum.
Claim 7
Dependent Claim
15 words
The semiconductor device of claim 1, in which said gate electrode is formed of tungsten.
Claim 8
Dependent Claim
22 words
The semiconductor device of claim 1, in which said first channel region is separated from said gate electrode by said insulation layer.
Claim 9
Dependent Claim
25 words
The semiconductor device of claim 1, in which said first source and drain regions are more weakly doped than said second source and drain regions.
Claim 10
Dependent Claim
19 words
The semiconductor device of claim 1, in which said first channel region is no wider than said gate electrode.
Claim 11
Dependent Claim
32 words
The semiconductor device of claim 1, in which said second channel region is no wider than the combined widths of said gate electrode and said silicon oxynitride layer covering the sides thereof.
References Cited (Backward Citations)
US3629088A
Cited
US4581622A
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US4663645A
Cited
US4709255A
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US4745086A
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US4733482A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-03 | 1994-03-05 | 1994-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-03 | 1998-03-05 | 1998-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-03 | 2002-03-05 | 2002-09-04 | $7700.00 | Window Closed / Lapsed |