Patent US4948751A successfully refreshed from Google Patents.
US4948751A
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Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
Assignee: NEC Corp
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Filing: 1988-05-19
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Granted: 1990-08-14
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Expires: 2008-05-19
Abstract
Abstract A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material containing a Group III element in vacuum in the presence of a Group V element to grow epitaxially a III-V compound semiconductor selectively on the semiconductor substrate under the condition where the partial pressure of the Group III element just above the semiconductor substrate is greater than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the semiconductor substrate and is smaller than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the insulator film. When InAs is grown epitaxially and selectively on a GaAs substrate, the GaAs substrate is kept at 500 DEG to 650 DEG C. and when GaAs is grown epitaxially and selectively on the GaAs substrate, the GaAs substrate is kept at 700 DEG to 775 DEG C.
Inventors
- 👤 Akihiko Okamoto
- 👤 Keiichi Ohata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/27; H10P14/271; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/065; Y10S148/097; Y10S148/169; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
146 words
A method of selective epitaxial growth comprising: a first step of selectively forming an insulator film on a surface of semiconductor substrate; and a second step of performing selective epitaxial growth of a III-V compound semiconductor on the exposed area of said surface of said semiconductor substrate without growing said III-V compound semiconductor on said insulator film by evaporating the Group III element of said III-V compound semiconductor in the presence of a Group V element under a condition where a partial pressure of said Group III element just above said semiconductor substrate and said insulator film is greater than a first equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said semiconductor substrate and is smaller than a second equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said insulator film.
Claim 2
Independent Claim
146 words
A method of selective epitaxial growth comprising: a first step of selectively forming an insulator film on a surface of semiconductor substrate; and a second step of performing selective epitaxial growth of a III-V compound semiconductor on the exposed area of said surface of said semiconductor substrate without growing said III-V compound semiconductor on said insulator film by evaporating the Group III element of said III-V compound semiconductor in the presence of a Group V element under a condition where a partial pressure of said Group III element just above said semiconductor substrate and said insulator film is greater than a first equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said semiconductor substrate and is smaller than a second equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said insulator film.
Claim 3
Dependent Claim
114 words
The method of selective epitaxial growth as claimed in claim 1, further comprising a third step of depositing said III-V compound semiconductor both above said semiconductor substrate and on said insulator film by evaporating said Group III element in the presence of said Group V element under a condition where a partial pressure of said Group III element just above said semiconductor substrate and said insulator film is greater than both a third equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said semiconductor substrate and a forth equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said insulator film.
Claim 4
Dependent Claim
26 words
The method of selective epitaxial growth as claimed in claim 1, wherein said semiconductor substrate is a GaAs substrate and said III-V compound semiconductor is InAs.
Claim 5
Dependent Claim
26 words
The method of selective epitaxial growth as claimed in claim 1, wherein said semiconductor substrate is a GaAs substrate and said III-V compound semiconductor is GaAs.
Claim 6
Dependent Claim
97 words
The method of selective epitaxial growth as claimed in claim 3, wherein said condition where said partial pressure of said Group III element just above said semiconductor substrate and said insulator film is greater than said first equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said semiconductor substrate and is smaller than said second equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said insulator film in a condition where a temperature of said semiconductor substrate is from 500° to 650° C.
Claim 7
Dependent Claim
97 words
The method of selective epitaxial growth as claimed in claim 4, wherein said condition where said partial pressure of said Group III element just above said semiconductor substrate and said insulator film is greater than said first equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said semiconductor substrate and is smaller than said second equilibrium vapor pressure of said Group III element contained in said III-V compound semiconductor existing on said insulator film, in a condition where a temperature of said semiconductor substrate is from 700° to 775° C.
Claim 8
Dependent Claim
21 words
The method of selective epitaxial growth as claimed in claim 1, wherein said insulator film is silicon oxide or silicon nitride.
Claim 9
Independent Claim
163 words
A method of manufacturing semiconductor devices comprising: a first step of selectively forming an insulating film on a predetermined region of a first III-V compound semiconductor substrate; a second step of epitaxially growing a second III-V compound semiconductor selectively on said first III-V compound semiconductor substrate without growing said second III-V compound semiconductor on said insulating film by evaporating the Group III element of said second III-V compound semiconductor in the presence of a Group V element under a condition where a partial pressure of said Group III element just above said first III-V compound semiconductor substrate and said insulating film is greater than a first equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor substrate and is smaller than a second equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor existing on said insulator film; and a third step of forming a semiconductor device in said second III-V compound semiconductor.
Claim 10
Independent Claim
163 words
A method of manufacturing semiconductor devices comprising: a first step of selectively forming an insulating film on a predetermined region of a first III-V compound semiconductor substrate; a second step of epitaxially growing a second III-V compound semiconductor selectively on said first III-V compound semiconductor substrate without growing said second III-V compound semiconductor on said insulating film by evaporating the Group III element of said second III-V compound semiconductor in the presence of a Group V element under a condition where a partial pressure of said Group III element just above said first III-V compound semiconductor substrate and said insulating film is greater than a first equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor substrate and is smaller than a second equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor existing on said insulator film; and a third step of forming a semiconductor device in said second III-V compound semiconductor.
Claim 11
Dependent Claim
30 words
The method of manufacturing semiconductor devices as claimed in claim 8, wherein said first III-V compound semiconductor substrate is a GaAs substrate and said second III-V compound semiconductor is InAs.
Claim 12
Dependent Claim
30 words
The method of manufacturing semiconductor devices as claimed in claim 8, wherein said first III-V compound semiconductor substrate is a GaAs substrate and said second III-V compound semiconductor is GaAs.
Claim 13
Dependent Claim
101 words
The method of manufacturing semiconductor devices as claimed in claim 9, wherein said condition where said partial pressure of said Group III element just above said first III-V compound semiconductor substrate and said insulating film is greater than said first equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor substrate and is smaller than said second equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor existing on said insulator film, in a condition where a temperature of said first III-V compound semiconductor substrate is from 500° to 650° C.
Claim 14
Dependent Claim
108 words
The method of manufacturing semiconductor devices as claimed in claim 10, wherein said condition where said partial pressure of said Group III element just above said first III-V compound semiconductor substrate and said insulating film is greater than said first equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor existing on said first III-V compound semiconductor substrate and is smaller than said second equilibrium vapor pressure of said Group III element contained in said second III-V compound semiconductor existing on said insulator film in a condition where a temperature of said first III-V compound semiconductor substrate is from 700° to 775° C.
Claim 15
Dependent Claim
21 words
The method of manufacturing semiconductor devices as claimed in claim 8, wherein said insulator film is silicon oxide or silicon nitride.
Claim 16
Independent Claim
160 words
A method of manufacturing semiconductor devices comprising: a first step of forming, on a first material where a Group III element contained in a III-V compound semiconductor to be growth thereon has a first equilibrium vapor pressure, a second material where said Group III element contained in said III-V compound semiconductor to be grown thereon has a second equilibrium vapor pressure larger than said first equilibrium vapor pressure; a second step of epitaxially growing said III-V compound semiconductor selectively on said first material without growing said III-V compound semiconductor on said second material by evaporating said Group III element in the presence of a Group V element under the condition where the partial pressure of said Group III element just above said first and second materials is greater than said first equilibrium vapor pressure and is smaller than said second equilibrium vapor pressure; and a third step of forming a semiconductor electrical element on said selectively grown III-V compound semiconductor.
Claim 17
Independent Claim
160 words
A method of manufacturing semiconductor devices comprising: a first step of forming, on a first material where a Group III element contained in a III-V compound semiconductor to be growth thereon has a first equilibrium vapor pressure, a second material where said Group III element contained in said III-V compound semiconductor to be grown thereon has a second equilibrium vapor pressure larger than said first equilibrium vapor pressure; a second step of epitaxially growing said III-V compound semiconductor selectively on said first material without growing said III-V compound semiconductor on said second material by evaporating said Group III element in the presence of a Group V element under the condition where the partial pressure of said Group III element just above said first and second materials is greater than said first equilibrium vapor pressure and is smaller than said second equilibrium vapor pressure; and a third step of forming a semiconductor electrical element on said selectively grown III-V compound semiconductor.
Claim 18
Dependent Claim
34 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said first material is a single crystal having a lattice constant which is approximate to that of said III14 V compound semiconductor.
Claim 19
Dependent Claim
20 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said first material is a III-V compound semiconductor.
Claim 20
Dependent Claim
17 words
The method of manufacturing semiconductor devices as claimed in claim 16, wherein said first material is GaAs.
Claim 21
Dependent Claim
18 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said III-V compound semiconductor is GaAs.
Claim 22
Dependent Claim
18 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said III-V compound semiconductor is InAs.
Claim 23
Dependent Claim
19 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said second material is an insulator film.
Claim 24
Dependent Claim
21 words
The method of manufacturing semiconductor devices as claimed in claim 14, wherein said second material is silicon oxide or silicon nitride.
References Cited (Backward Citations)
US3751310A
Cited
US3928092A
Cited
US4181544A
Cited
US4111725A
Cited
JPS54138382A
Cited
US4517047A
Cited
US4622093A
Cited
JPS6066810A
Cited
US4637129A
Cited
US4622083A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |