Patent US4947056A successfully refreshed from Google Patents.
US4947056A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOSFET for producing a constant voltage
Assignee: NEC Electronics Corp
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Filing: 1989-04-10
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Granted: 1990-08-07
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Expires: 2009-04-10
Abstract
Abstract A circuit for producing a constant voltage comprises first and second MOSFETs, and first and second bias voltage producing devices. The first and second MOSFETs to which first and second input voltages are applied, respectively, are connected in series. The first bias voltage producing device produces a potential difference, which is equal to a threshold voltage of the first MOSFET, to be applied across drain and gate of the first MOSFET, and the second bias voltage producing device produces a potential difference, which is equal to a threshold voltage of the second MOSFET, to be applied across drain and gate of the second MOSFET, so that a wide range of an output voltage is produced at a connecting point of the first and second MOSFETs. Even more, the output voltage is stabilized in level, even if the threshold voltages fluctuate in a semiconductor device fabricating process.
Inventors
- 👤 Toshikatsu Jinbo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:51
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
85 words
A circuit for producing a constant voltage: comprising, first and second MOSFETs connected in series and each having one conduction type; bias means connected between gate and drain for each of said first and second MOSFETs; and first and second voltage sources connected to said first and second MOSFETs, respectively; wherein said bias means produces potential differences equal to threshold levels of a MOSFET, whereby a wide range of a stabilized output voltage is produced at a connecting point of said first and second MOSFETs.
Claim 2
Dependent Claim
85 words
A circuit for producing a constant voltage: comprising, first and second MOSFETs connected in series and each having one conduction type; bias means connected between gate and drain for each of said first and second MOSFETs; and first and second voltage sources connected to said first and second MOSFETs, respectively; wherein said bias means produces potential differences equal to threshold levels of a MOSFET, whereby a wide range of a stabilized output voltage is produced at a connecting point of said first and second MOSFETs.
Claim 3
Dependent Claim
111 words
A circuit for producing a constant voltage according to claim 1, wherein each of said first and second MOSFETs is such that substrate potential is equal to source potential; and said bias means includes third and fourth MOSFETs each having said one conduction type; source and substrate of said third MOSFET being connected to said drain of said first MOSFET, and drain and gate of said third MOSFET being connected to said gate of said first MOSFET; and source and substrate of said fourth MOSFET being connected to said drain of said second MOSFET, and drain and gate of said third MOSFET being connected to said gate of said second MOSFET.
Claim 4
Dependent Claim
37 words
A circuit for producing a constant voltage according to claim 2, further, comprising, means for floating said gates of said first and second MOSFETs when first and second voltages of said first and second voltage sources fluctuate.
Claim 5
Dependent Claim
107 words
A circuit for producing a constant voltage according to claim 3, wherein said means for floating includes first and second N type depletion MOSFETs; drain of said first N type depletion MOSFET being connected to a connecting point of said drain and said gate of said third MOSFET, and source and gate of said first N type depletion MOSFET being connected to a ground potential; and drain of said second N type depletion MOSFET being connected to a connecting point of said drain and said gate of said fourth MOSFET, and source and gate of said second N type depletion MOSFET being connected to a ground potential.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-06 | 1994-02-05 | 1994-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-06 | 1998-02-05 | 1998-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-06 | 2002-02-05 | 2002-08-07 | $7700.00 | Window Closed / Lapsed |