US4788455A
Expired / Lapsed
US
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CMOS reference voltage generator employing separate reference circuits for each output transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1986-08-01
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Granted: 1988-11-29
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Expires: 2006-08-01
Abstract
Abstract An internal power supply voltage generator for generating an internal power supply voltage for a semiconductor integrated device includes first and second reference voltage generators which produce first and second reference voltages having respective values a predetermined amount above and below an optimal value of the internal power supply voltage. The first and second reference voltage generators are constructed of a pair of serially connected NMOS and PMOS transistors, respectively, which transistors are connected between an external voltage supply and ground. The first and second reference voltages are applied to a CMOS output stage constructed of a NMOS and PMOS transistor serially connected between the external voltage supply and ground, the gates of the transistors being coupled to the first and second reference voltages, so as to provide said internal power supply voltage at a common node between the transistors. This voltage generator exhibits a lowered power dissipation and a lowered output impedance, as a result of providing a CMOS output stage.
Inventors
- 👤 Shigeru Mori
- 👤 Hiroshi Miyamoto
- 👤 Tadato Yamagata
- 👤 Michihiro Yamada
- 👤 Kazutami Arimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:11
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
254 words
An internal power supply voltage generator for a semiconductor integrated circuit device for generating an internal power supply voltage which is lower than the absolute value of an external power supply voltage from an external power supply on a semiconductor chip, comprising: a first reference voltage generator including a first and a second resistor element and a first and a second N channel MOS transistor serially connected between said external power supply and ground, said first and second N channel MOS transistors being serially connected between said first and second resistor elements, for outputting a first reference voltage which is level shifted by the threshold voltage of said first N channel MOS transistor relative to said internal power supply voltage to be generated; a second reference voltage generator including a third and a fourth resistor element and a first and a second P channel MOS transistor serially connected between said external power supply and ground, said first and second P channel MOS transistors being serially connected between said third and fourth resistor elements, for outputting a second reference voltage which is level shifted by the threshold voltage of said second P channel MOS transistor relative to said internal power supply voltage to be generated; and an internal power supply voltage outputting stage comprising an N channel and a P channel MOS transistor serially connected between said external power supply and ground, which transistors are coupled to the outputs of said first and second reference voltage generators, respectively, to produce said internal power supply voltage.
Claim 2
Dependent Claim
254 words
An internal power supply voltage generator for a semiconductor integrated circuit device for generating an internal power supply voltage which is lower than the absolute value of an external power supply voltage from an external power supply on a semiconductor chip, comprising: a first reference voltage generator including a first and a second resistor element and a first and a second N channel MOS transistor serially connected between said external power supply and ground, said first and second N channel MOS transistors being serially connected between said first and second resistor elements, for outputting a first reference voltage which is level shifted by the threshold voltage of said first N channel MOS transistor relative to said internal power supply voltage to be generated; a second reference voltage generator including a third and a fourth resistor element and a first and a second P channel MOS transistor serially connected between said external power supply and ground, said first and second P channel MOS transistors being serially connected between said third and fourth resistor elements, for outputting a second reference voltage which is level shifted by the threshold voltage of said second P channel MOS transistor relative to said internal power supply voltage to be generated; and an internal power supply voltage outputting stage comprising an N channel and a P channel MOS transistor serially connected between said external power supply and ground, which transistors are coupled to the outputs of said first and second reference voltage generators, respectively, to produce said internal power supply voltage.
Claim 3
Dependent Claim
20 words
The internal power supply voltage generator of claim 1, wherein said first, second, third, and fourth resistor elements comprise resistors.
Claim 4
Dependent Claim
51 words
The internal power supply voltage generator of claim 1, wherein said first and second resistor elements comprise N channel MOS transistors whose gate and drain are connected to each other, and said third and fourth resistor elements comprise P channel MOS transistors whose gate and source are connected to each other.
Claim 5
Dependent Claim
231 words
An internal power supply voltage generator for a semiconductor integrated circuit device for generating an internal power supply voltage which is lower than the absolute value of an external power supply voltage from an external power supply on a semiconductor chip comprising: a first reference voltage generator including a first and a second resistor element and a first N channel MOS transistor serially connected between said external power supply and ground for outputting a first reference voltage of said N channel MOS transistor relative to either of the upper limit or the lower limit of said internal power supply voltage to be generated; a second reference voltage geneator including a third and a fourth resistor element and a first P channel MOS transistor serially connected between said external power supply and ground for outputting a second reference voltage which is level shifted by the thresholdvoltage of said P channel MOS transistor relative to either of the lower limit or the upper limit of said internal power supply voltage to be generated, with respect to said first reference voltage; and an internal power supply voltage outputting stage comprising a second N channel and a second P channel MOS transistor serially connected between said external power supply and ground, which transistors are coupled to the outputs of said first and said second reference voltage generators, respectively, to produce said internal power supply voltage.
Claim 6
Dependent Claim
231 words
An internal power supply voltage generator for a semiconductor integrated circuit device for generating an internal power supply voltage which is lower than the absolute value of an external power supply voltage from an external power supply on a semiconductor chip comprising: a first reference voltage generator including a first and a second resistor element and a first N channel MOS transistor serially connected between said external power supply and ground for outputting a first reference voltage of said N channel MOS transistor relative to either of the upper limit or the lower limit of said internal power supply voltage to be generated; a second reference voltage geneator including a third and a fourth resistor element and a first P channel MOS transistor serially connected between said external power supply and ground for outputting a second reference voltage which is level shifted by the thresholdvoltage of said P channel MOS transistor relative to either of the lower limit or the upper limit of said internal power supply voltage to be generated, with respect to said first reference voltage; and an internal power supply voltage outputting stage comprising a second N channel and a second P channel MOS transistor serially connected between said external power supply and ground, which transistors are coupled to the outputs of said first and said second reference voltage generators, respectively, to produce said internal power supply voltage.
Claim 7
Dependent Claim
97 words
The internal power supply voltage generator of claim 4, wherein said first reference voltage is a voltage which is level shifted by half of the threshold voltage of said first N channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said first and second resistor elements, and said second reference voltage is a voltage which is level shifted by half of the threshold voltage of said first P channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said third and fourth resistor elements.
Claim 8
Dependent Claim
95 words
The internal power supply voltage generator of claim 4, wherein said first reference voltage is a voltage which is level shifted by the threshold voltage of said first N channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said first and second resistor elements, and said second reference voltage is a voltage which is level shifted by half of the threshold voltage of said first P channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said third and fourth resistor elements.
Claim 9
Dependent Claim
95 words
The internal power supply voltage generator of claim 4, wherein said first reference voltage is a voltage which is level shifted by half of the threshold voltage of said first N channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said first and second resistor elements, and said second reference voltage is a voltage which is level shifted by the threshold voltage of said first P channel MOS transistor relative to a voltage obtained by dividing said external power supply voltage by said third and fourth resistor elements.
Claim 10
Dependent Claim
18 words
The internal power supply voltage generator of claim 4, wherein said first to fourth resistor elements comprise resistors.
Claim 11
Dependent Claim
51 words
The internal power supply voltage generator of claim 4, wherein said first and second resistor elements comprise N channel MOS transistors whose gate and drain are connected to each other, and said third and fourth resistor elements comprise P channel MOS transistors whose gate and source are connected to each other.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-29 | 1992-05-30 | 1992-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-29 | 1996-05-30 | 1996-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-29 | 2000-05-30 | 2000-11-29 | $7700.00 | Window Closed / Lapsed |