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US4937641A
Expired / Lapsed
US
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Semiconductor memory and method of producing the same
Assignee: Hitachi Ltd
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Filing: 1987-08-03
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Granted: 1990-06-26
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Expires: 2007-08-03
Abstract
Abstract The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.
Inventors
- 👤 Hideo Sunami
- 👤 Makoto Ohkura
- 👤 Masanobu Miyao
- 👤 Kikuo Kusukawa
- 👤 Masahiro Moniwa
- 👤 Shinichiro Kimura
- 👤 Terunori Warabisako
- 👤 Tokuo Kure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:33
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
267 words
A semiconductor random access memory having a plurality of memory cells which each comprise: a capacitor including: a capacitor node of a first conductivity type formed as a first protruding portion on a semiconductor substrate of a second conductivity type, wherein a groove in said substrate is formed between two adjacent first protruding portions forming said capacitor nodes, wherein each said first protruding portion is a side wall of said groove; an insulating film formed on upper and side surfaces of said first protruding portion, and on a bottom surface of said groove between adjacent capacitor nodes; and a capacitor plate formed on said insulating film in said groove between said first protruding portions forming said capacitor nodes; a field effect transistor including: a second protruding semiconductor portion of a second conductivity formed on said upper surface of said first protruding portion forming said capacitor node, wherein said insulating film formed on said upper surface of said capacitor node includes an opening to permit contact between said first protruding portion forming said capacitor node and said second protruding portion; a gate insulating film formed on a side surface of said second protruding semiconductor portion; a gate electrode formed on said gate insulating film; and a semiconductor region of the first conductivity type formed in an upper surface of said second protruding semiconductor portion; and means coupled to said gate electrode for applying a voltage to said gate electrode to form a channel in said second protruding semiconductor portion between said semiconductor region formed in said upper surface of said second protruding semiconductor portion and said capacitor node.
Claim 2
Dependent Claim
267 words
A semiconductor random access memory having a plurality of memory cells which each comprise: a capacitor including: a capacitor node of a first conductivity type formed as a first protruding portion on a semiconductor substrate of a second conductivity type, wherein a groove in said substrate is formed between two adjacent first protruding portions forming said capacitor nodes, wherein each said first protruding portion is a side wall of said groove; an insulating film formed on upper and side surfaces of said first protruding portion, and on a bottom surface of said groove between adjacent capacitor nodes; and a capacitor plate formed on said insulating film in said groove between said first protruding portions forming said capacitor nodes; a field effect transistor including: a second protruding semiconductor portion of a second conductivity formed on said upper surface of said first protruding portion forming said capacitor node, wherein said insulating film formed on said upper surface of said capacitor node includes an opening to permit contact between said first protruding portion forming said capacitor node and said second protruding portion; a gate insulating film formed on a side surface of said second protruding semiconductor portion; a gate electrode formed on said gate insulating film; and a semiconductor region of the first conductivity type formed in an upper surface of said second protruding semiconductor portion; and means coupled to said gate electrode for applying a voltage to said gate electrode to form a channel in said second protruding semiconductor portion between said semiconductor region formed in said upper surface of said second protruding semiconductor portion and said capacitor node.
Claim 3
Dependent Claim
67 words
A semiconductor random access memory according to claim 1, wherein said random access memory further includes a plurality of bit lines respectively coupled to said impurity doped regions of said field effect transistors of said memory cells and wherein said means for applying a voltage to said gate electrode comprises word lines respectively coupled to said gate electrodes of said field effect transistors of said memory cells.
Claim 4
Dependent Claim
19 words
A semiconductor random access memory according to claim 2, wherein said gate electrodes are formed by said word lines.
Claim 5
Dependent Claim
52 words
A semiconductor random access memory device structure according to claim 1, wherein said insulator film positioned between the capacitor node and the plate is formed of a material selected from a group comprised of SiO 2 , Si 3 N 4 , Ta 2 O 5 and Ti 2 O 5 .
Claim 6
Dependent Claim
51 words
A semiconductor random access memory device structure according to claim 4, wherein the field effect transistor is a metal-oxide-semiconductor field effect transistor and wherein said gate electrode is formed of a material selected from a group comprised of polycrystalized silicon, W, Mo, WSi 2 , MoSi 2 and TiSi 2 .
Claim 7
Dependent Claim
33 words
A semiconductor random access memory device structure according to claim 1, wherein information data is stored in an inversion layer at the surface of the capacitor node forming a capacitor with said plate.
Claim 8
Dependent Claim
52 words
A semiconductor random access memory device structure according to claim 6, wherein said insulator film positioned between the capacitor node and the plate is formed of a material selected from a group comprised of SiO 2 , Si 3 N 4 , Ta 2 O 5 and Ti 2 O 5 .
Claim 9
Dependent Claim
52 words
A semiconductor random access memory device structure according to claim 7, wherein the field effect transistor is a metal-oxide-semiconductor field effect transistor and further wherein said gate electrode is formed of a material selected from a group comprised of polycrystalized silicon, W, Mo, WSi 2 , MoSi 2 and TiSi 2 .
Claim 10
Dependent Claim
40 words
A semiconductor random access memory device structure according to claim 1, wherein the semiconductor portion is connected to a plurality of the capacitor nodes so that each semiconductor portion will form field effect transistors for a plurality of memory cells.
Claim 11
Dependent Claim
22 words
A semiconductor random access memory device structure according to claim 2, wherein the impurity doped regions and the bit lines are self-aligned.
Claim 12
Dependent Claim
40 words
A semiconductor random access memory device structure according to claim 10, wherein the semiconductor portion is connected to a plurality of the capacitor nodes so that each semiconductor portion will form field effect transistors for a plurality of memory cells.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |