Abstract A method for making highly dense, dielectrically isolated, U-shaped MOSFET. In a preferred method a monocrystalline silicon P substrate with a N+ layer thereon, a P layer on the N+ layer and a N+ layer on the P layer is provided. A pattern of U-shaped openings is formed in the body through to the P substrate by the reactively ion etching technique. This pattern of openings is filled with an insulator material, such as silicon dioxide. A conductive layer of N+ doped polycrystalline silicon is deposited on the bare surface of this silicon body. Openings are formed in the polycrystalline silicon over the silicon dioxide filled openings. A silicon dioxide layer is then grown by, for example, thermal oxidation over the polycrystalline silicon layer. Reactively ion etching is used to produce substantially U-shaped openings through the layers over the P substrate and into the P substrate to substantially bisect the regions of monocrystalline silicon. This etching step forms two storage cells in the monocrystalline silicon areas and a bit line for each column of cells in the polycrystalline silicon layer. A silicon dioxide gate insulator is grown on the monocrystalline silicon surfaces of the U-shaped openings by thermal oxidation in a suitable ambient. Conductively doped polycrystalline silicon is deposited in the U-shaped openings over the silicon dioxide gate insulator layer until the openings are filled and cover the surface of the body. The conductively doped polycrystalline silicon on the surface of the body is etched in a suitable pattern to produce the word lines of the random access memory device.
A highly dense MOSFET single channel random access memory device structure comprising: a plurality of monocrystalline regions on a P substrate isolated from one another by a pattern of U-shaped in cross-section dielectric regions; said monocrystalline regions being bisected into two like regions by a U-shaped in cross-section region having a silicon dioxide surface and the remaining central area filled with conductive polycrystalline silicon; said two like regions each contain a N+ layer on said P substrate, a P layer on said N+ layer, a N+ layer on said P layer, and a N+ polycrystalline silicon layer on the said N+ layer on said P layer; said conductive polycrystalline silicon in said central area being connected over an insulated surface with a line of similar regions; said silicon dioxide surface being the gate insulator, said N+ layers being the source/drain, said P between said N+ layers containing the channel region, said N+ polycrystalline region being the contact to the said N+ layer on the said P layer, said conductive polycrystalline silicon in said central area being the gate electrode of said MOSFET; and said N+ polycrystalline region being connected to identical said like regions as the bit line, said conductive polycrystalline silicon connected with a said line of similar regions being the word line, the PN junction between said P substrate and said N+ layer thereon being the storage capacitor of said random access memory.
Claim 2
Dependent Claim
235 words
A highly dense MOSFET single channel random access memory device structure comprising: a plurality of monocrystalline regions on a P substrate isolated from one another by a pattern of U-shaped in cross-section dielectric regions; said monocrystalline regions being bisected into two like regions by a U-shaped in cross-section region having a silicon dioxide surface and the remaining central area filled with conductive polycrystalline silicon; said two like regions each contain a N+ layer on said P substrate, a P layer on said N+ layer, a N+ layer on said P layer, and a N+ polycrystalline silicon layer on the said N+ layer on said P layer; said conductive polycrystalline silicon in said central area being connected over an insulated surface with a line of similar regions; said silicon dioxide surface being the gate insulator, said N+ layers being the source/drain, said P between said N+ layers containing the channel region, said N+ polycrystalline region being the contact to the said N+ layer on the said P layer, said conductive polycrystalline silicon in said central area being the gate electrode of said MOSFET; and said N+ polycrystalline region being connected to identical said like regions as the bit line, said conductive polycrystalline silicon connected with a said line of similar regions being the word line, the PN junction between said P substrate and said N+ layer thereon being the storage capacitor of said random access memory.
Claim 3
Dependent Claim
25 words
The memory structure of claim 1 wherein said insulated surface is a silicon dioxide coating on said N+ polycrystalline silicon layer and said dielectric regions.
Claim 4
Dependent Claim
14 words
The memory structure of claim 1 wherein said dielectric regions are thermal silicon dioxide.
Claim 5
Dependent Claim
20 words
The memory structure of claim 1 and further comprising a passivation layer over the entire surface of said memory structure.