Patent US4936951A successfully refreshed from Google Patents.
US4936951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of reducing proximity effect in electron beam resists
Assignee: Panasonic Holdings Corp
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Filing: 1988-10-26
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Granted: 1990-06-26
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Expires: 2008-10-26
Abstract
Abstract A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Taichi Koizumi
- 👤 Kenji Kawakita
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:14
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; H10P50/00; H10P50/73; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
124 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) treating said organic polymer film surface with an electrical resistance reducing solution selected form the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (c) forming an insulation film on the treated organic polymer film; (d) forming a radiation-sensitive resist film on said insulation film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said insulation film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched insulation film as a mask.
Claim 2
Dependent Claim
124 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) treating said organic polymer film surface with an electrical resistance reducing solution selected form the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (c) forming an insulation film on the treated organic polymer film; (d) forming a radiation-sensitive resist film on said insulation film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said insulation film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched insulation film as a mask.
Claim 3
Dependent Claim
130 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) forming an organic polysiloxane film on said organic polymer film; (c) treating the surface of said organic polysiloxane film with an electrical resistance reducing solution selected from the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (d) forming a radiation-sensitive resist film on the treated organic polysiloxane film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said organic polysiloxane film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched organic polysiloxane film as a mask.
Claim 4
Dependent Claim
130 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) forming an organic polysiloxane film on said organic polymer film; (c) treating the surface of said organic polysiloxane film with an electrical resistance reducing solution selected from the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (d) forming a radiation-sensitive resist film on the treated organic polysiloxane film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said organic polysiloxane film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched organic polysiloxane film as a mask.
References Cited (Backward Citations)
US4068018A
Cited
US4311785A
Cited
US4222792A
Cited
US4366230A
Cited
US4465768A
Cited
US4649099A
Cited
US4556619A
Cited
US4504646A
Cited
JPS59198448A
Cited
US4521274A
Cited
US4615782A
Cited
US4702993A
Cited
JPS6336239A
Cited
US4764247A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |