US4936951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of reducing proximity effect in electron beam resists
Assignee: Panasonic Holdings Corp
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Filing: 1988-10-26
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Granted: 1990-06-26
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Expires: 2008-10-26
Abstract
Abstract A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Taichi Koizumi
- 👤 Kenji Kawakita
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:27
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; H10P50/00; H10P50/73; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
124 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) treating said organic polymer film surface with an electrical resistance reducing solution selected form the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (c) forming an insulation film on the treated organic polymer film; (d) forming a radiation-sensitive resist film on said insulation film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said insulation film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched insulation film as a mask.
Claim 2
Dependent Claim
124 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) treating said organic polymer film surface with an electrical resistance reducing solution selected form the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (c) forming an insulation film on the treated organic polymer film; (d) forming a radiation-sensitive resist film on said insulation film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said insulation film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched insulation film as a mask.
Claim 3
Dependent Claim
130 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) forming an organic polysiloxane film on said organic polymer film; (c) treating the surface of said organic polysiloxane film with an electrical resistance reducing solution selected from the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (d) forming a radiation-sensitive resist film on the treated organic polysiloxane film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said organic polysiloxane film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched organic polysiloxane film as a mask.
Claim 4
Dependent Claim
130 words
A fine pattern forming method comprising the steps of: (a) applying an organic polymer film on a semiconductor substrate; (b) forming an organic polysiloxane film on said organic polymer film; (c) treating the surface of said organic polysiloxane film with an electrical resistance reducing solution selected from the group consisting of aldehyde, sulphurous acid and (COOH) 2 ; (d) forming a radiation-sensitive resist film on the treated organic polysiloxane film; (e) forming a predetermined pattern in said radiation-sensitive resist film by exposing said resist film to a radiation beam and thereafter developing said radiation-sensitive resist film; (f) etching said organic polysiloxane film using said predetermined pattern of said radiation-sensitive resist film as a mask; and (g) etching said organic polymer film using the etched organic polysiloxane film as a mask.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
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