Patent US4935378A successfully refreshed from Google Patents.
US4935378A
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US
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Method for manufacturing a semiconductor device having more than two conductive layers
Assignee: Toshiba Corp
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Filing: 1988-03-18
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Granted: 1990-06-19
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Expires: 2008-03-18
Abstract
Abstract According to a semiconductor device manufacturing method of the invention, a first polycrystalline silicon layer doped with an impurity, a thin oxide film, a second polycrystalline silicon layer, and a silicon nitride film are sequentially formed, one upon the other. The silicon nitride film, the second polycrystalline silicon layer, the thin oxide film, and the first polycrystalline silicon layer are then etched, in a self-aligned manner, by means of a photolithography process. A thick oxide film is formed on a side wall portion of the first polycrystalline silicon layer, using the silicon nitride film as a mask, and after the silicon nitride film is removed, a conductive film is formed on the entire surface. Since a film formation process advances without patterning the first polycrystalline silicon layer, the first polycrystalline silicon layer is not damaged by an RIE process and the like. A defect density of the oxide film formed on the first polycrystalline silicon layer can be reduced. Since the thick oxide film is formed on the side wall portion of the first polycrystalline silicon layer, a withstand voltage and reliability of this portion are largely improved.
Inventors
- 👤 Seiichi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:52
CPC Classifications
H; H10; H10D; H10D84/00; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10B; H10B69/00; H10D30/00; H10D30/60
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
260 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an element isolation region on a main surface of a silicon substrate; forming a first insulating film on an element region of said silicon substrate which is isolated by said element isolation region; forming a first silicon layer doped with an impurity on said entire first insulating film and extending over said element isolation region; forming a second insulating film on said first silicon layer and extending over said element isolation region; forming a second silicon layer on said second insulating film and extending over said element isolation region; forming an antioxidant film on said second silicon layer and extending over said element isolation region; selectively etching said antioxidant film, said second silicon layer, said second insulating film, and said first silicon layer using a mask having a predetermined pattern to terminate said first silicon layer at side wall portions thereof each extending perpendicularly onto said element isolation region; forming a third insulating film on said side wall portions of said first silicon layer and on side wall portions of said second silicon layer, by selective oxidation, using said antioxidant film as a mask; and forming a conductive layer on said second silicon layer and extending over said element isolation region with said conductive layer having a wall portion on said element isolation region facing said side wall portions of said first silicon layer, with said third insulating film being between said wall portion of said conductive layer and said side wall portions of said first silicon layer.
Claim 2
Independent Claim
260 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an element isolation region on a main surface of a silicon substrate; forming a first insulating film on an element region of said silicon substrate which is isolated by said element isolation region; forming a first silicon layer doped with an impurity on said entire first insulating film and extending over said element isolation region; forming a second insulating film on said first silicon layer and extending over said element isolation region; forming a second silicon layer on said second insulating film and extending over said element isolation region; forming an antioxidant film on said second silicon layer and extending over said element isolation region; selectively etching said antioxidant film, said second silicon layer, said second insulating film, and said first silicon layer using a mask having a predetermined pattern to terminate said first silicon layer at side wall portions thereof each extending perpendicularly onto said element isolation region; forming a third insulating film on said side wall portions of said first silicon layer and on side wall portions of said second silicon layer, by selective oxidation, using said antioxidant film as a mask; and forming a conductive layer on said second silicon layer and extending over said element isolation region with said conductive layer having a wall portion on said element isolation region facing said side wall portions of said first silicon layer, with said third insulating film being between said wall portion of said conductive layer and said side wall portions of said first silicon layer.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said antioxidant film is a silicon nitride film.
Claim 4
Dependent Claim
13 words
A method according to claim 1, wherein said conductive layer consists of silicon.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein said conductive layer consists of a high melting point metal.
Claim 6
Dependent Claim
20 words
A method according to claim 1, wherein said conductive layer consists of a silicide of a high melting point metal.
Claim 7
Dependent Claim
26 words
A method according to claim 1, wherein said conductive layer consists of a polycide of a silicide of a high melting point metal and polycrystalline silicon.
Claim 8
Dependent Claim
16 words
A method according to claim 1, wherein said first and second insulating films are oxide films.
Claim 9
Dependent Claim
17 words
A method according to claim 1, wherein the impurity doped in said first silicon layer is phosphorus.
Claim 10
Dependent Claim
33 words
A method according to claim 1, wherein said antioxidant film is removed from said second silicon layer before said conductive layer is formed on said second silicon layer and said element isolation region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-06-18 | 1993-12-18 | 1994-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-18 | 1997-12-18 | 1998-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-18 | 2001-12-18 | 2002-06-19 | $7700.00 | Window Closed / Lapsed |