Patent US4933737A successfully refreshed from Google Patents.
US4933737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polysilon contacts to IC mesas
Assignee: Hitachi Ltd
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Filing: 1987-06-01
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Granted: 1990-06-12
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Expires: 2007-06-01
Abstract
Abstract A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.
Inventors
- 👤 Tohru Nakamura
- 👤 Takao Miyazaki
- 👤 Susumu Takahashi
- 👤 Ichiro Imaizumi
- 👤 Takahiro Okabe
- 👤 Minoru Nagata
- 👤 Masao Kawamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:25
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D10/00; H10D10/311; H10D62/17; H10D62/177; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/20; H10D64/27; H10D64/281; H10D64/60; H10D64/62; H10D84/00; H10D84/60; H10D84/65; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
337 words
A semiconductor device comprising: a single crystalline semiconductor body; a plurality of protruding portions and hollow portions of said body formed by removing predetermined unnecessary portions of said body, said hollow portions being adjacent to said protruding portions and being lower than upper surfaces of said protruding portions, wherein said upper surfaces of said protruding portions each have upper peripheral edge portions; a first insulating film extending from a predetermined location on a surface of said hollow portion towards said upper surface of at least one of said protruding portions along a side surface of at least one of said protruding portions; a first region of first conductivity type formed in said at least one of said protruding portions; a second region of second conductivity type opposite to said first conductivity type formed on said first region; a third region of said second conductivity type formed under said first region; a polycrystalline semiconductor film of said first conductivity type formed on a surface of said first insulating film and extending along said surface of said first insulating film from a predetermined location over said hollow portion between said adjacent protruding portions and over said side surface of said protruding portion to contact at least a predetermined part of said upper surface of said protruding portion, and polycrystalline semiconductor film being formed after said protruding portions, said hollow portions and said first insulating film have been formed; and a second insulating film formed on said polycrystalline semiconductor film, said polycrystalline semiconductor film being connected to said first region at said predetermined part of said upper surface of said protruding portion, wherein said second region is formed in self-alignment with said upper peripheral edge portion of said protruding portion to be spaced from the upper peripheral edge portion by a substantially constant distance, and further wherein said first and third regions have the widths in a lateral direction substantially the same as those of regions of said protruding portions in which said first and third regions are formed, respectively.
Claim 2
Dependent Claim
337 words
A semiconductor device comprising: a single crystalline semiconductor body; a plurality of protruding portions and hollow portions of said body formed by removing predetermined unnecessary portions of said body, said hollow portions being adjacent to said protruding portions and being lower than upper surfaces of said protruding portions, wherein said upper surfaces of said protruding portions each have upper peripheral edge portions; a first insulating film extending from a predetermined location on a surface of said hollow portion towards said upper surface of at least one of said protruding portions along a side surface of at least one of said protruding portions; a first region of first conductivity type formed in said at least one of said protruding portions; a second region of second conductivity type opposite to said first conductivity type formed on said first region; a third region of said second conductivity type formed under said first region; a polycrystalline semiconductor film of said first conductivity type formed on a surface of said first insulating film and extending along said surface of said first insulating film from a predetermined location over said hollow portion between said adjacent protruding portions and over said side surface of said protruding portion to contact at least a predetermined part of said upper surface of said protruding portion, and polycrystalline semiconductor film being formed after said protruding portions, said hollow portions and said first insulating film have been formed; and a second insulating film formed on said polycrystalline semiconductor film, said polycrystalline semiconductor film being connected to said first region at said predetermined part of said upper surface of said protruding portion, wherein said second region is formed in self-alignment with said upper peripheral edge portion of said protruding portion to be spaced from the upper peripheral edge portion by a substantially constant distance, and further wherein said first and third regions have the widths in a lateral direction substantially the same as those of regions of said protruding portions in which said first and third regions are formed, respectively.
Claim 3
Dependent Claim
58 words
A semiconductor device according to claim 1, wherein a junction between said first and third region is formed in said protruding region at a level which is higher than a level of said hollow portion and the width of said junction in a lateral direction is self-aligned with the width of said protruding portion in said lateral direction.
Claim 4
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the thickness of said polycrystalline semiconductor film in said hollow portion is less than the height of said protruding portion.
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said polycrystalline semiconductor film is contacted to said second region with a substantially constant width.
Claim 6
Dependent Claim
33 words
The semiconductor device according to claim 1, wherein the thickness of said first insulating film under said polycrystalline semiconductor film in said hollow portion is smaller than the height of said protruding portion.
Claim 7
Dependent Claim
57 words
A semiconductor device according to claim 1, wherein a distance between an electrode formed on said second region and said upper peripheral portion of said protruding portion is substantially the same as the total thickness of said polycrystalline semiconductor film and said second insulating film in a lateral direction at said upper surface of said protruding portion.
Claim 8
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein the width of said first region is self-aligned to that of said protruding portion.
References Cited (Backward Citations)
US3570114A
Cited
US3664896A
Cited
US3600651A
Cited
US3740276A
Cited
US3764413A
Cited
US4396933A
Cited
DE2818090A1
Cited
US4157269A
Cited
US4499657A
Cited
US4546538A
Cited
US4782030A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-11 | 1993-12-11 | 1994-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-11 | 1997-12-11 | 1998-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-11 | 2001-12-11 | 2002-06-12 | $7700.00 | Window Closed / Lapsed |