US4915746A
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Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
Assignee: Individual
•
Filing: 1988-08-15
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Granted: 1990-04-10
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Expires: 2008-08-15
Abstract
Abstract A method of forming internal high temperature barriers in structural metals is provided. The barriers prevent movement of boundaries and dislocations inside the structural metal, and make structural metals creep-resistant at high homologous temperatures. The method comprises providing a first layer of structural metal, such as tungsten, molybdimum or rhenium, implanting ions, such as potassium, into this layer, and layering a second layer of structural metal on the ion-implanted first layer to form a laminated product. The steps of implanting and layering can be repeated an arbitrary number of times.
Inventors
- 👤 Gerhard E. Welsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:05
CPC Classifications
B; B32; B32B; B32B15/00; B32B15/01; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/22; C23C14/48; C23C4/00; C23C4/02; Y; Y02; Y02T; Y02T50/00; Y02T50/60; Y10; Y10S; Y10S148/00; Y10S148/90; Y10T; Y10T428/00; Y10T428/12; Y10T428/12431; Y10T428/12438; Y10T428/12493; Y10T428/12771; Y10T428/12806; Y10T428/12812; Y10T428/12819; Y10T428/12826; Y10T428/12833
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
136 words
A method of forming internal high temperature barriers in structural metals to prevent movement of boundaries and dislocations for making said structural metals creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of undoped structural metal that creeps at high homologous temperatures and has zero or very low solubility for the group of elements consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, and francium; implanting ions in said first layer of metal to form a first implantation region, said ions being members of the group consisting of the elements xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, francium and mixtures thereof; and, layering a second layer of undoped structural metal on said first ion implanted layer to form a composite, the implantation region buried inside the composite.
Claim 2
Independent Claim
136 words
A method of forming internal high temperature barriers in structural metals to prevent movement of boundaries and dislocations for making said structural metals creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of undoped structural metal that creeps at high homologous temperatures and has zero or very low solubility for the group of elements consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, and francium; implanting ions in said first layer of metal to form a first implantation region, said ions being members of the group consisting of the elements xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, francium and mixtures thereof; and, layering a second layer of undoped structural metal on said first ion implanted layer to form a composite, the implantation region buried inside the composite.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the atomic volume of the ion-implanted element is greater than the atomic volume of the structural metal.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein the atomic volume of the ion-implanted element is at least approximately twice that of the structural metal.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein said first layer is provided as a generally flat sheet whereby the step of implanting ions is accomplished along an unobstructed path.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by vapor deposition.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by plating.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by thermal spray deposition.
Claim 9
Dependent Claim
21 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by electrolytic deposition.
Claim 10
Dependent Claim
21 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by sputter deposition.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein the step of layering the second layer of structural metal is accomplished by pressure bonding.
Claim 12
Dependent Claim
70 words
The method of claim 1 wherein the structural metal that creeps at high homologous temperatures is a member of the group consisting of: Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and alloys thereof.
Claim 13
Dependent Claim
11 words
The method of claim 1 wherein the ions are implanted directly.
Claim 14
Dependent Claim
37 words
The method of claim 1 wherein the atomic size of the implanted element is significantly larger than that of the structural metal and the implanted elements cannot readily diffuse through the structural metal at high homologous temperature.
Claim 15
Dependent Claim
43 words
The method of claim 1 wherein the ion-implanted atoms are finely dispersed in thin films within the composite and form fine bubbles in these regions to pin against the movement of dislocations and grain boundaries thereby conteracting creep and recrystallization in undesired directions.
Claim 16
Dependent Claim
29 words
The method of claim 1 wherein the steps of implanting and layering are repeated to form a second ion implantation region and a third layer of undoped structural metal.
Claim 17
Independent Claim
173 words
A method of making internal high temperature barriers in structural metals to prevent movement of boundaries and dislocations within the metals and for making said structural metals creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of implanted structural metal that creeps at high homologous temperatures and has zero or very low solubility for the group of elements consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium and francium; implanting a first batch of ions on said first layer of metal to form a first implantation region, said ions being members of the group consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium and francium; layering a second layer of structural metal on said first ion-implanted layer; implanting a second batch of ions on said second layer of metal to form a second implantation region; and, layering a third layer of structural metal on said second ion-implanted layer to form a laminated product having a plurality of ion-implanted regions interspersed within the structural metal.
Claim 18
Independent Claim
173 words
A method of making internal high temperature barriers in structural metals to prevent movement of boundaries and dislocations within the metals and for making said structural metals creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of implanted structural metal that creeps at high homologous temperatures and has zero or very low solubility for the group of elements consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium and francium; implanting a first batch of ions on said first layer of metal to form a first implantation region, said ions being members of the group consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium and francium; layering a second layer of structural metal on said first ion-implanted layer; implanting a second batch of ions on said second layer of metal to form a second implantation region; and, layering a third layer of structural metal on said second ion-implanted layer to form a laminated product having a plurality of ion-implanted regions interspersed within the structural metal.
Claim 19
Dependent Claim
41 words
The method of claim 16 further including the steps of: implanting a third batch of ions on said third layer of metal; and layering a fourth layer of structural metal on said third ion implanted layer to form a laminated product.
Claim 20
Independent Claim
110 words
A method of making metal creep resistant, the method comprising the steps of: providing a first layer of metal from the group consisting of Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and alloys thereof; impregnating the first layer with ions from the group consisting of alkali elements and noble gases; and, forming a second layer of metal on said first impregnated layer, the ions providing a barrier against creep among the metal layers.
Claim 21
Independent Claim
110 words
A method of making metal creep resistant, the method comprising the steps of: providing a first layer of metal from the group consisting of Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and alloys thereof; impregnating the first layer with ions from the group consisting of alkali elements and noble gases; and, forming a second layer of metal on said first impregnated layer, the ions providing a barrier against creep among the metal layers.
Claim 22
Dependent Claim
22 words
The method of claim 18 wherein the applicable alkali elements are selected from the group consisting of potassium, rubidium, cesium, and francium.
Claim 23
Dependent Claim
22 words
The method of claim 18 wherein the noble gases are selected from the group consisting of xenon, argon, neon, krypton and helium.
Claim 24
Dependent Claim
10 words
The method of claim 18 further including fashioning a filament.
Claim 25
Independent Claim
93 words
A method of making a lamp filament, the method comprising the steps of: providing a substrate; depositing on said substrate a first layer of undoped structural metal of the group consisting of W, Mo, Ta, Re, Os and alloys thereof; implanting ions in said first layer of undoped metal, said ions being members of the group consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, francium and mixtures thereof; depositing a second layer of undoped structural metal on said first ion-implanted layer to produce a laminated product; and, forming a lamp filament.
Claim 26
Independent Claim
93 words
A method of making a lamp filament, the method comprising the steps of: providing a substrate; depositing on said substrate a first layer of undoped structural metal of the group consisting of W, Mo, Ta, Re, Os and alloys thereof; implanting ions in said first layer of undoped metal, said ions being members of the group consisting of xenon, helium, neon, argon, krypton, potassium, rubidium, cesium, francium and mixtures thereof; depositing a second layer of undoped structural metal on said first ion-implanted layer to produce a laminated product; and, forming a lamp filament.
Claim 27
Dependent Claim
12 words
A lamp filament made in accordance with the method of claim 22.
Claim 28
Dependent Claim
18 words
The method of claim 22 wherein the steps of implanting and depositing are repeated at least one time.
Claim 29
Dependent Claim
23 words
The method of claim 22 wherein the step of forming comprises selectively deforming, cutting or stamping the laminated product into a predetermined geometry.
Claim 30
Dependent Claim
10 words
The method of claim 22 wherein said substrate is iron.
Claim 31
Dependent Claim
24 words
The method of claim 22 wherein said substrate is provided as a generally flat member wherein the path for applying ions is not obstructed.
Claim 32
Dependent Claim
16 words
The method of claim 22 wherein the additional step of etching away the substrate is provided.
Claim 33
Dependent Claim
11 words
The method of claim 22 wherein the structural metal is tungsten.
Claim 34
Dependent Claim
11 words
The method of claim 22 wherein the ions are potassium ions.
Claim 35
Independent Claim
60 words
A method of making refractory metal creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of refractory metal; implanting in said first layer a fine film of ions from the group consisting of K, Rb, Cs, Fr and mixtures thereof; and layering a second layer of refractory metal on said first ion-implanted layer.
Claim 36
Independent Claim
60 words
A method of making refractory metal creep resistant at high homologous temperature, the method comprising the steps of: providing a first layer of refractory metal; implanting in said first layer a fine film of ions from the group consisting of K, Rb, Cs, Fr and mixtures thereof; and layering a second layer of refractory metal on said first ion-implanted layer.
Claim 37
Dependent Claim
27 words
The method of claim 31 wherein the refractory metal is of the group consisting of Zr, Nb, Mo, Tc, Ru, Hf, Ta, W, Re, Os and Ir.
Claim 38
Dependent Claim
20 words
The method of claim 31 wherein the melting temperature of the refractory metal ranges from 1850° C. to 3500° C.
Claim 39
Dependent Claim
15 words
The method of claim 31 wherein the ion-implanted elements are insoluble in the refractory metals.
Claim 40
Dependent Claim
112 words
A creep resistant laminate comprising: a first layer of undoped structural metal of the group consisting of Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and alloys thereof; ions from the group consisting of K, Rb, Cs, Fr, He, Ne, Ar, Kr, Xe, and mixtures thereof, said ions implanted into said first layer to form an ion implantation region; and, a second layer of undoped structural metal layered on said first ion-implanted layer of structural metal.
Claim 41
Dependent Claim
112 words
A creep resistant laminate comprising: a first layer of undoped structural metal of the group consisting of Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and alloys thereof; ions from the group consisting of K, Rb, Cs, Fr, He, Ne, Ar, Kr, Xe, and mixtures thereof, said ions implanted into said first layer to form an ion implantation region; and, a second layer of undoped structural metal layered on said first ion-implanted layer of structural metal.
Claim 42
Dependent Claim
24 words
The creep resistant laminate of claim 35 wherein a plurality of ion-implanted structural metal layers are included on said first layer of structural metal.
Claim 43
Independent Claim
50 words
A method of making tungsten creep resistant at high homologous temperatures, the method comprising: providing a first layer of tungsten; impregnating said first layer of tungsten with potassium ions to form an ion-implanted layer; and, layering a second layer of tungsten on said ion-impregnated layer to form a laminated product.
Claim 44
Independent Claim
50 words
A method of making tungsten creep resistant at high homologous temperatures, the method comprising: providing a first layer of tungsten; impregnating said first layer of tungsten with potassium ions to form an ion-implanted layer; and, layering a second layer of tungsten on said ion-impregnated layer to form a laminated product.
Claim 45
Dependent Claim
27 words
The method of claim 1 wherein said first layer is provided as a curved member whereby the step of implanting ions is accomplished along an unobstructed path.
Claim 46
Dependent Claim
11 words
The method of claim 1 wherein the ions are implanted indirectly.
Claim 47
Dependent Claim
12 words
The implanted product produced in accordance with the process of claim 1.
Claim 48
Dependent Claim
17 words
The method of claim 16 wherein the ion implanted regions are thin films within the laminated product.
Claim 49
Dependent Claim
20 words
The method of claim 16 wherein the concentration of each ion implantation region ranges from about 0.01% to about 5%.
Claim 50
Dependent Claim
15 words
The method of claim 22 wherein said substrate is provided as a generally curved member.
Claim 51
Dependent Claim
25 words
The creep resistant laminate of claim 35 wherein the ion concentration in the ion implantation region ranges from about 0.01% to about 5% (atomic percent).
Claim 52
Dependent Claim
49 words
A creep resistant structural metal comprising: a first layer of undoped structural metal that creeps at high homologous temperatures; a second layer of undoped structural metal that creeps at high temperatures; and, a thin film of ions implanted between the metal layers to prevent creep among the metal layers.
Claim 53
Dependent Claim
49 words
A creep resistant structural metal comprising: a first layer of undoped structural metal that creeps at high homologous temperatures; a second layer of undoped structural metal that creeps at high temperatures; and, a thin film of ions implanted between the metal layers to prevent creep among the metal layers.
Claim 54
Dependent Claim
64 words
The creep resistant structural metal of claim 45 wherein the metals are selected from the group consisting of: Be, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Md, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and alloys thereof.
Claim 55
Dependent Claim
30 words
The creep resistant structural metal of claim 45 wherein the ions are selected from the group consisting of: xenon, helium, neon, argon. krypton, potassium, rubidium, cesium, francium and mixtures thereof.
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