US4372985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implantation for hard bubble suppression
Assignee: Boeing North American Inc
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Filing: 1980-12-08
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Granted: 1983-02-08
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Expires: 2000-12-08
Abstract
Abstract A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of the substrate; and directing a beam of ions consisting essentially of a nongaseous ion at the substrate.
Inventors
- 👤 Robert F. Bailey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:13
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/14; H01F41/18; H01F41/186; C; C23; C23C; C23C14/00; C23C14/22; C23C14/48
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
109 words
A method for processing a magnetic bubble domain device comprising the steps of: providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of said substrate; directing a beam of ions consisting essentially of a non-gaseous element at said entire layer so that said ions are implanted at a depth in excess of 500 angstroms while minimizing the compressive stress in the implanted layer, and thereby minimizing the change in stress-induced anisotropy of the ion-damaged implanted layer, said entire layer still being capable of supporting magnetic bubble domains while hard bubble domains are suppressed after ion implantation.
Claim 2
Independent Claim
109 words
A method for processing a magnetic bubble domain device comprising the steps of: providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of said substrate; directing a beam of ions consisting essentially of a non-gaseous element at said entire layer so that said ions are implanted at a depth in excess of 500 angstroms while minimizing the compressive stress in the implanted layer, and thereby minimizing the change in stress-induced anisotropy of the ion-damaged implanted layer, said entire layer still being capable of supporting magnetic bubble domains while hard bubble domains are suppressed after ion implantation.
Claim 3
Dependent Claim
25 words
A method as defined in claim 1, wherein said ions are selected from the group consisting of boron, arsenic, gallium, phosphorus, aluminum, zinc, or silicon.
Claim 4
Dependent Claim
21 words
A method as defined in claim 1, wherein the energy of said beam of ions is from 20 to 50 keV.
References Cited (Backward Citations)
US3795542A
Cited
US3792452A
Cited
US4122538A
Cited
US4098917A
Cited
GB2001219B
Cited
US4196228A
Cited
US4256780A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-07 | 1986-08-09 | 1987-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-07 | 1990-08-09 | 1991-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-07 | 1994-08-09 | 1995-02-08 | $7700.00 | Window Closed / Lapsed |