Patent US4372985A successfully refreshed from Google Patents.
US4372985A
Expired / Lapsed
US
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Ion implantation for hard bubble suppression
Assignee: Boeing North American Inc
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Filing: 1980-12-08
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Granted: 1983-02-08
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Expires: 2000-12-08
Abstract
Abstract A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of the substrate; and directing a beam of ions consisting essentially of a nongaseous ion at the substrate.
Inventors
- 👤 Robert F. Bailey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:21
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/14; H01F41/18; H01F41/186; C; C23; C23C; C23C14/00; C23C14/22; C23C14/48
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
109 words
A method for processing a magnetic bubble domain device comprising the steps of: providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of said substrate; directing a beam of ions consisting essentially of a non-gaseous element at said entire layer so that said ions are implanted at a depth in excess of 500 angstroms while minimizing the compressive stress in the implanted layer, and thereby minimizing the change in stress-induced anisotropy of the ion-damaged implanted layer, said entire layer still being capable of supporting magnetic bubble domains while hard bubble domains are suppressed after ion implantation.
Claim 2
Independent Claim
109 words
A method for processing a magnetic bubble domain device comprising the steps of: providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of said substrate; directing a beam of ions consisting essentially of a non-gaseous element at said entire layer so that said ions are implanted at a depth in excess of 500 angstroms while minimizing the compressive stress in the implanted layer, and thereby minimizing the change in stress-induced anisotropy of the ion-damaged implanted layer, said entire layer still being capable of supporting magnetic bubble domains while hard bubble domains are suppressed after ion implantation.
Claim 3
Dependent Claim
25 words
A method as defined in claim 1, wherein said ions are selected from the group consisting of boron, arsenic, gallium, phosphorus, aluminum, zinc, or silicon.
Claim 4
Dependent Claim
21 words
A method as defined in claim 1, wherein the energy of said beam of ions is from 20 to 50 keV.
References Cited (Backward Citations)
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Cited
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Cited
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Cited
US4196228A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-07 | 1986-08-09 | 1987-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-07 | 1990-08-09 | 1991-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-07 | 1994-08-09 | 1995-02-08 | $7700.00 | Window Closed / Lapsed |