Method of fabricating magnetic bubble memory device

Claim 2

In a method of fabricating a magnetic bubble memory device comprising the steps of implanting ions in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles and annealing said magnetic bubble film, the improvement comprising: wherein said implanting is performed using hydrogen ions and is performed by placing said magnetic bubble film on a rotary table and, while said rotary table is turning, implanting hydrogen ions in said desired portion of the surface region in said magnetic bubble film for magnetic bubbles with an ion dose of 2.5×10 16 to 1×10 17 cm -2 to form an ion-implanted layer, the implanting while turning the rotary table acting to prevent the temperature of the magnetic bubble film from rising so that the temperature of the magnetic bubble film is not higher than a predetermined temperature when said ion implantation is effected, whereby release of hydrogen ions from the bubble film and reduction in anisotropy field ΔH k caused by excessive temperature rise of the magnetic bubble film during ion implantation are prevented; and wherein a film is formed on said magnetic bubble film to cover said magnetic bubble film prior to annealing said magnetic bubble film, said annealing being performed to smooth a strain distribution in said ion-implanted layer.

Claim 3

A method according to claim 1, wherein said film formed on said magnetic bubble film is selected from a group consisting of an insulating film, a metal film, an alloy film and a polycrystalline silicon film.

Claim 4

A method according to claim 2, wherein said insulating film has a thickness substantially equal to or more than 50 Å.

Claim 5

A method according to claim 3, wherein said insulating film is an SiO 2 film having substantially a thickness of 50 to 10,000 Å.

Claim 6

A method according to claim 1, 2, 3 or 4, wherein said magnetic bubble film is annealed substantially at 350°-800° C.

Claim 7

A method according to claim 1, wherein said predetermined temperature is 200° C.

Claim 8

In a method of fabricating a magnetic bubble memory device comprising the steps of implanting ions in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles and annealing said magnetic bubble film, the improvement comprising: wherein said implanting is performed using hydrogen ions and is performed by placing a magnetic bubble film on a rotatable table opposite an ion-implanter, wherein said ion-implanter emits ions which bombard said magnetic bubble film as said magnetic bubble film is periodically positioned to receive ions from said ion-implanter; and by implanting hydrogen ions in said desired portion of the surface region in said magnetic bubble film for magnetic bubbles with an ion dose of 2.5×10 16 to 1×10 17 cm -2 to form an ion-implanted layer, while rotating said rotatable table, the implanting while rotating the rotatable table acting to prevent the temperature of the magnetic bubble film from rising so that the temperature of said magnetic bubble film is not higher than a predetermined temperature when said ion implantation is effected, whereby the release of hydrogen ions from the magnetic bubble film and reduction in anisotropy field ΔH k caused by excessive temperature rise of the magnetic bubble film during the implanting is prevented; and wherein a film is formed on said magnetic bubble film to cover said magnetic bubble film prior to annealing, said annealing being performed to smooth a strain distribution in said ion-implanted layer.

Claim 9

In a method of fabricating a magnetic bubble memory device comprising the steps of implanting ions in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles and annealing said magnetic bubble film, the improvement comprising: wherein said implanting is performed using hydrogen ions and is performed by placing a magnetic bubble film on a rotatable table opposite an ion-implanter, wherein said ion-implanter emits ions which bombard said magnetic bubble film as said magnetic bubble film is periodically positioned to receive ions from said ion-implanter; and by implanting hydrogen ions in said desired portion of the surface region in said magnetic bubble film for magnetic bubbles with an ion dose of 2.5×10 16 to 1×10 17 cm -2 to form an ion-implanted layer, while rotating said rotatable table, the implanting while rotating the rotatable table acting to prevent the temperature of the magnetic bubble film from rising so that the temperature of said magnetic bubble film is not higher than a predetermined temperature when said ion implantation is effected, whereby the release of hydrogen ions from the magnetic bubble film and reduction in anisotropy field ΔH k caused by excessive temperature rise of the magnetic bubble film during the implanting is prevented; and wherein a film is formed on said magnetic bubble film to cover said magnetic bubble film prior to annealing, said annealing being performed to smooth a strain distribution in said ion-implanted layer.

Claim 10

A method according to claim 7 wherein said predetermined temperature is 200° C.

Claim 11

A method according to claim 7, wherein the propagation margin remains constant throughout said fabrication of said magnetic bubble device.

Claim 12

A method according to claim 9, wherein the propagation margin is equal to or greater than 7%.

Claim 13

A method according to claim 7, wherein said film formed on said magnetic bubble film is selected from a group consisting of an insulating film, a metal film, an alloy film and a polycrystalline silicon film.

Claim 14

A method according to claim 11, wherein said insualating film has a thickness substantially equal to or more than 50 Å.

Claim 15

A method according to claim 12, wherein said insulating film is an SiO 2 film having substantially a thickness of 50 to 10,000 Å.

Claim 16

A method according to claim 7, wherein said magnetic bubble film is annealed substantially at 350°-800° C.

Claim 17

A method according to claim 7, wherein said magnetic bubble film is annealed substantially at 400° C.

Claim 18

A method according to claim 7, wherein said hydrogen ions implanted in said magnetic bubble film have an energy of 100 KeV.

Claim 19

A method according to claim 11, wherein said insulating film is at least one compound selected from the group consisting of SiO 2 , Si 3 N 4 or Al 2 0 3 .

Claim 20

A method according to claim 11 wherein said metal film is at least one element selected from the group consisting of: aluminum, nickel, chromium or titanium.

Claim 21

A method according to claim 1, wherein, in addition to said hydrogen ions, ions of at least one of helium and neon are also implanted in said magnetic bubble film.

Claim 22

A method according to claim 7, wherein, in addition to said hydrogen ions, ions of at least one of helium and neon are also implanted in said magnetic bubble film.

Claim 23

A method according to claim 1, wherein said film formed on said magnetic bubble film is a film for preventing release of hydrogen ions due to annealing.

Claim 24

A method according to claim 7, wherein said film formed on said magnetic bubble film is a film for preventing release of hydrogen ions due to annealing.