Patent US4910568A successfully refreshed from Google Patents.
US4910568A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor
Assignee: Fujitsu Ltd
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Filing: 1989-05-01
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Granted: 1990-03-20
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Expires: 2009-05-01
Abstract
Abstract Field isolation between arrayed picture cells of an image sensor is fabricated thinner than the insulation layer for the peripheral portion of CCD operatively connected to picture cells. The field isolation is fabricated by a selective thermal oxidization, by which the isolation film inflates not only vertically but also laterally, therefore the thinner isolation layer can be narrower. And, the lower applied voltage to the picture cell than applied voltage to the CCD portion allows the narrower isolation. The narrower field isolation between the picture cells allows greater density of integration of the picture cells. Procedures to embody the invention are disclosed, one of which is to fabricate the thinner isolation first, and another one is the thicker insulation layer first.
Inventors
- 👤 Akira Takei
- 👤 Tetsuo Nishikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:10
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/151
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
162 words
An image sensor formed on a semiconductor substrate, comprising: a plurality of semiconductor light detection cells formed on said semiconductor substrate, each of said light detection cells producing electrical signal charges responding to intensity of a light projected thereon; a charge - coupled device formed on said semiconductor substrate, operatively connected to said light detection cells for transferring and outputting electrical signal charges produced in said light detection cells; a first field insulation layer formed on said semiconductor substrate, for isolating a patterned wiring of a peripheral portion of said charge-coupled device from said semiconductor substrate; and a second field insulation layer formed in said semiconductor substrate which selectively extends into a surface of semiconductor substrate, for demarcating an area forming each of said light detecting cells, as well as of isolating and electrically insulating adjacent ones of said light detection cells, a thickness of said second field insulation layer being essentially thinner than a thickness of said first field insulation layer.
Claim 2
Dependent Claim
162 words
An image sensor formed on a semiconductor substrate, comprising: a plurality of semiconductor light detection cells formed on said semiconductor substrate, each of said light detection cells producing electrical signal charges responding to intensity of a light projected thereon; a charge - coupled device formed on said semiconductor substrate, operatively connected to said light detection cells for transferring and outputting electrical signal charges produced in said light detection cells; a first field insulation layer formed on said semiconductor substrate, for isolating a patterned wiring of a peripheral portion of said charge-coupled device from said semiconductor substrate; and a second field insulation layer formed in said semiconductor substrate which selectively extends into a surface of semiconductor substrate, for demarcating an area forming each of said light detecting cells, as well as of isolating and electrically insulating adjacent ones of said light detection cells, a thickness of said second field insulation layer being essentially thinner than a thickness of said first field insulation layer.
Claim 3
Dependent Claim
54 words
An image sensor according to claim 1, wherein the thickness of said first field insulation layer is adequate to withstand an applied voltage to said patterned wiring of the peripheral portion, as well as the thickness of said second field insulation layer is adequate to withstand an applied voltage to said light detection cells.
Claim 4
Dependent Claim
179 words
An image sensor formed on a semiconductor substrate having a first conductivity type, comprising: a plurality of semiconductor light detection cells, each formed on a region having a second conductivity type opposite said first conductivity type in said semiconductor substrate, for producing electrical signal charges responding to intensity of a light projected thereon; a charge-coupled device formed on said semiconductor substrate, connected to said light detection cells, for transferring and outputting electrical signal charges produced in said light detection cells; a first field insulation layer formed on said semiconductor substrate, for isolating a patterned wiring of a peripheral portion of said charge-coupled device from said semiconductor substrate; and a second field insulation layer formed on said semiconductor substrate to selectivley extend into a surface of said semiconductor substrate, for demarcating said region of the second conductivity type forming each of said light detection cells, as well s for isolating and electrically insulating adjacent ones of said light detection cells, a thickness of said second field insulation layer being essentially thinner than a thickness of said first field insulation layer.
Claim 5
Dependent Claim
179 words
An image sensor formed on a semiconductor substrate having a first conductivity type, comprising: a plurality of semiconductor light detection cells, each formed on a region having a second conductivity type opposite said first conductivity type in said semiconductor substrate, for producing electrical signal charges responding to intensity of a light projected thereon; a charge-coupled device formed on said semiconductor substrate, connected to said light detection cells, for transferring and outputting electrical signal charges produced in said light detection cells; a first field insulation layer formed on said semiconductor substrate, for isolating a patterned wiring of a peripheral portion of said charge-coupled device from said semiconductor substrate; and a second field insulation layer formed on said semiconductor substrate to selectivley extend into a surface of said semiconductor substrate, for demarcating said region of the second conductivity type forming each of said light detection cells, as well s for isolating and electrically insulating adjacent ones of said light detection cells, a thickness of said second field insulation layer being essentially thinner than a thickness of said first field insulation layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |