Abstract A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationship V.sub.B +2φ.sub.FP <V.sub.TG sub where; V B represents a voltage which completely depletes the light-charge converter region; φ FP represents a difference between a Fermi level of the semiconductor substrate not containing an impurity; and V TG sub represents a potential generated at the semiconductor substrate in the charge transfer gate section by the mentioned pulse.
The solid-state imaging device comprising a semiconductor substrate of one conductivity type having an impurity concentration in the order of 1 to 10×10 14 cm -3 , a plurality of light-charge converter regions of the other conductivity type having an impurity concentration of 10 15 to 10 18 cm -3 , said light-charge converter regions being arrayed in a matrix form of rows and columns, a plurality of surface regions of said one conductivity type having an impurity concentration which is higher than the impurity concentration of said light-charge converter regions, said surface regions being disposed at the surface of said light-charge converter regions, charge transfer gate sections disposed parallel to columns of said light-charge converter regions, CCD charge transfer sections disposed parallel to said charge transfer gate sections, shift register means for receiving charges from said CCD charge transfer sections, and charge-voltage converter means for deriving a voltage signal in response to quantities of charges transferred along said shift register.
Claim 2
Dependent Claim
161 words
The solid-state imaging device comprising a semiconductor substrate of one conductivity type having an impurity concentration in the order of 1 to 10×10 14 cm -3 , a plurality of light-charge converter regions of the other conductivity type having an impurity concentration of 10 15 to 10 18 cm -3 , said light-charge converter regions being arrayed in a matrix form of rows and columns, a plurality of surface regions of said one conductivity type having an impurity concentration which is higher than the impurity concentration of said light-charge converter regions, said surface regions being disposed at the surface of said light-charge converter regions, charge transfer gate sections disposed parallel to columns of said light-charge converter regions, CCD charge transfer sections disposed parallel to said charge transfer gate sections, shift register means for receiving charges from said CCD charge transfer sections, and charge-voltage converter means for deriving a voltage signal in response to quantities of charges transferred along said shift register.