High density charge-coupled device imager and method of making the same

Claim 1

In a charge-coupled device imager which includes in a substrate of semiconductor material of one conductivity type, a first register having a plurality of spaced, parallel buried channel regions of a conductivity type opposite to that of the substrate in the substrate and extending along a surface of the substrate and a plurality of conductive gates extending transversely across the channel regions and insulated from the substrate surface and a second register having a buried channel region in the substrate and extending along said substrate surface substantially perpendicular to and across the ends of the first region channel regions and a plurality of conductive gates extending transversely across the second register channel region substantially parallel to the first register channel regions and insulated from said substrate surface, the conductive gates of said second register being arranged in a plurality of sets with a plurality of gates in each set, one gate of each set extending to a common conductive termination which is along the side of the second register channel region over and insulated from the first register and the gates of the other sets extending to conductive termination which is along the side of the second register channel region opposite to the first register, the improvement comprising, the termination strip is of conductive polycrystalline silicon, at least a portion of said termination strip extends over a portion of a conductive gate of said first register, a layer of silicon oxide extends between the overlapping portions of said termination strip and the said conductive gates of the first register, and a plurality of metal contacts are spaced along the portions of the termination strip which is over the conductive gate of the first register.