US4908692A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fuse-containing semiconductor device
Assignee: Toshiba Corp
•
Filing: 1989-01-27
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Granted: 1990-03-13
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Expires: 2009-01-27
Abstract
Abstract A semiconductor device comprises a semiconductor substrate, an insulating layer formed on the substrate, and a fuse deposited on the insulating layer so as to be interposed between two wiring layers. The fuse is prepared from high melting point metal silicide.
Inventors
- 👤 Kouji Kikuchi
- 👤 Kazuo Endo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:42
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/80; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
84 words
A semiconductor device having a fuse, which device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; at least two wiring layers separately formed on said insulating layer; and a fuse provided on said insulating layer for connecting the two wiring layers; wherein said fuse includes a composite body formed of a first layer of a metal silicide including a metal component, and a second layer prepared from metal material corresponding to the metal component and provided on said first layer.
Claim 2
Dependent Claim
84 words
A semiconductor device having a fuse, which device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; at least two wiring layers separately formed on said insulating layer; and a fuse provided on said insulating layer for connecting the two wiring layers; wherein said fuse includes a composite body formed of a first layer of a metal silicide including a metal component, and a second layer prepared from metal material corresponding to the metal component and provided on said first layer.
Claim 3
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein a third layer of said metal silicide is provided on said second layer.
Claim 4
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein said insulating layer has a groove forming a cavity immediately beneath said fuse.
Claim 5
Dependent Claim
23 words
The semiconductor device according to claim 1, wherein said first layer is formed of MoSi x or WSi x or TiSi x .
Claim 6
Dependent Claim
15 words
The semiconductor device according to claim 1, wherein said second layer is formed of Mo.
Claim 7
Dependent Claim
31 words
The semiconductor device according to claim 1, wherein said first layer is formed of MoSi x or WSi x or TiSi x , and said second layer is formed of Mo.
Claim 8
Dependent Claim
23 words
The semiconductor device according to claim 2, wherein said third layer is formed of MoSi x or WSi x or TiSi x .
Claim 9
Dependent Claim
17 words
The semiconductor device according to claim 7, wherein said insulating layer is formed of SiO x .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |