Method for making a programmable vertical silicide fuse

Claim 1

A method of forming a vertical silicide fuse comprising the steps of: a. providing a substrate having a conductive portion, b. providing an insulating layer of silicon containing material over at least said portion of said substrate, c. providing a fuse-metal layer over at least a portion of said insulating layer, said fuse-metal being selected from the group consisting of noble and refractory metals, d. whereby said vertical silicide fuse can be fused by heating said insulating layer to a temperature below the melting temperature of all of said insulating layer, said fuse-metal, said substrate and a silicide of said fuse-metal, to form by solid phase diffusion a silicide of said fuse-metal.

Claim 2

A method of forming a vertical silicide fuse comprising the steps of: a. providing a substrate having a conductive portion, b. providing an insulating layer of silicon containing material over at least said portion of said substrate, c. providing a fuse-metal layer over at least a portion of said insulating layer, said fuse-metal being selected from the group consisting of noble and refractory metals, d. whereby said vertical silicide fuse can be fused by heating said insulating layer to a temperature below the melting temperature of all of said insulating layer, said fuse-metal, said substrate and a silicide of said fuse-metal, to form by solid phase diffusion a silicide of said fuse-metal.

Claim 9

A method of forming a vertical silicide fuse comprising the steps of providing a layer of an electrically conducting metal selected from the the group consisting of noble and refractory metals, on a silicon containing structure, whereby said vertical silicide fuse can be fused by forming a silicide of said metal by solid phase diffusion of said metal into said silicon containing structure and by solid phase diffusion of silicon into said metal layer by elevating the temperature of the metal and silicon to the silicide forming temperature of said metal by establishing a programming voltage between said metal and said silicon containing structure.

Claim 10

A method of forming a vertical silicide fuse comprising the steps of providing a layer of an electrically conducting metal selected from the the group consisting of noble and refractory metals, on a silicon containing structure, whereby said vertical silicide fuse can be fused by forming a silicide of said metal by solid phase diffusion of said metal into said silicon containing structure and by solid phase diffusion of silicon into said metal layer by elevating the temperature of the metal and silicon to the silicide forming temperature of said metal by establishing a programming voltage between said metal and said silicon containing structure.

Claim 13

A method of forming a vertical silicide fuse comprising, a. providing a first layer of a metal selected from the group consisting of noble and refractory metals, b. providing a second layer of n-type crystalline silicon, c. providing a third layer of undoped crystalline silicon, such that said second layer is intermediate and adjacent said first and third layers, d. said first and second layers being in contact at a fuse region such that a Schottky barrier is formed which prevents current flow at voltages below the breakdown voltage of the Schottky barrier prior to fuse and, e. whereby said vertical silicide fuse can be fused by heating said fuse region to cause solid phase diffusion of said metal completely through said second layer and to cause solid phase diffusion of said silicion into said metal to thereby form a metal silicide without melting of any of said metal, said silicon or said metal silicide, thereby establishing an ohmic contact between said first and third layers.

Claim 14

A method of forming a vertical silicide fuse comprising, a. providing a first layer of a metal selected from the group consisting of noble and refractory metals, b. providing a second layer of n-type crystalline silicon, c. providing a third layer of undoped crystalline silicon, such that said second layer is intermediate and adjacent said first and third layers, d. said first and second layers being in contact at a fuse region such that a Schottky barrier is formed which prevents current flow at voltages below the breakdown voltage of the Schottky barrier prior to fuse and, e. whereby said vertical silicide fuse can be fused by heating said fuse region to cause solid phase diffusion of said metal completely through said second layer and to cause solid phase diffusion of said silicion into said metal to thereby form a metal silicide without melting of any of said metal, said silicon or said metal silicide, thereby establishing an ohmic contact between said first and third layers.

Claim 16

A method of forming a vertical silicide fuse comprising, providing first and second metal layers and a silicon containing layer having a substantial insulating characteristic said first metal layer being formed of a metal selected from the group consisting of the noble and refractory metals, said silicon containing layer being between said first and second metal layers such that there is initially a substantial insulator between said first and second metal layers, whereby said vertical silicide fuse can be fused by heating said silicon containing layer between said first and second metal layers to induce solid phase diffusion of at least said first metal into said silicon containing layer to form a conducting silicide between said first and second metal layers.

Claim 17

A method of forming a vertical silicide fuse comprising, providing first and second metal layers and a silicon containing layer having a substantial insulating characteristic said first metal layer being formed of a metal selected from the group consisting of the noble and refractory metals, said silicon containing layer being between said first and second metal layers such that there is initially a substantial insulator between said first and second metal layers, whereby said vertical silicide fuse can be fused by heating said silicon containing layer between said first and second metal layers to induce solid phase diffusion of at least said first metal into said silicon containing layer to form a conducting silicide between said first and second metal layers.

Claim 24

A method of forming a vertical silicide fuse comprising, a. providing a first layer of n-type crystalline silicon, b. providing a second layer of an insulative silicon containing material, c. providing a third layer of a metal selected from the group consisting of the noble and refractory metals, d. positioning said second layer intermediate and adjacent said first and third layers, e. whereby said vertical silicide fuse can be fused by heating said second layer to a silicide forming temperature without melting any of said first, second or third layers, to form a silicide of said metal by solid phase diffusion, and thereby establish a Schottky diode at the junction of said silicide and said first layer.

Claim 25

A method of forming a vertical silicide fuse comprising, a. providing a first layer of n-type crystalline silicon, b. providing a second layer of an insulative silicon containing material, c. providing a third layer of a metal selected from the group consisting of the noble and refractory metals, d. positioning said second layer intermediate and adjacent said first and third layers, e. whereby said vertical silicide fuse can be fused by heating said second layer to a silicide forming temperature without melting any of said first, second or third layers, to form a silicide of said metal by solid phase diffusion, and thereby establish a Schottky diode at the junction of said silicide and said first layer.