US3752702A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a schottky barrier device
Assignee: Individual
•
Filing: 1969-09-29
•
Granted: 1973-08-14
•
Expires: 1989-09-29
Abstract
Abstract AN ETCHING PROCESS FOR <111> ORIENTED SILICON SUBSTRATE ALONG A HEXAGONAL WINDOW, IN WHICH AN ETCHED RECESS IS FORMED ALONG THE WINDOW IN A CLEAR SHAPE BY MEANS OF DIRECTING ONE SIDE OF THE HEXAGONAL WINDOW PARALLEL TO A CRYSTALLOGRAPHIC AXIS <$10> OR <1$0>. A METAL IS THEN FORMED IN THE ETCHED RECESS TO FORM THE SCHOTTKY BARRIER BETWEEN THE METAL AND THE SEMICONDUCTOR MATERIAL BY DEPOSITING SAID METAL BY MEANS OF THE SPUTTERING OR VACUUM EVAPORATION METHOD. A VACANT SPACE IS THEREBY FORMED JUST UNDER AN INSULATING FILM ALONG THE PREIPHERY OF THE WINDOW, RESULTING IN A SCHOTTKY BARRIER DEVICE HAVING A GOOD BACKWARD CHARACTERISTIC.
Inventors
- 👤 G Kano
- 👤 H Hasegawa
- 👤 I Teramoto
- 👤 H Iwasa
- 👤 O Hoshida
- 👤 S Fujiwara
- 👤 M Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:49
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23F; C23F1/00; C23F1/02; C23F1/10; C23F1/14; C23F1/32; C23F1/40; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/102; Y10S148/115; Y10S148/139; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-13 | 1977-02-12 | 1977-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-13 | 1981-02-12 | 1981-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-13 | 1985-02-12 | 1985-08-14 | $7700.00 | Window Closed / Lapsed |