Method of making a schottky barrier device

Abstract

Abstract AN ETCHING PROCESS FOR <111> ORIENTED SILICON SUBSTRATE ALONG A HEXAGONAL WINDOW, IN WHICH AN ETCHED RECESS IS FORMED ALONG THE WINDOW IN A CLEAR SHAPE BY MEANS OF DIRECTING ONE SIDE OF THE HEXAGONAL WINDOW PARALLEL TO A CRYSTALLOGRAPHIC AXIS <$10> OR <1$0>. A METAL IS THEN FORMED IN THE ETCHED RECESS TO FORM THE SCHOTTKY BARRIER BETWEEN THE METAL AND THE SEMICONDUCTOR MATERIAL BY DEPOSITING SAID METAL BY MEANS OF THE SPUTTERING OR VACUUM EVAPORATION METHOD. A VACANT SPACE IS THEREBY FORMED JUST UNDER AN INSULATING FILM ALONG THE PREIPHERY OF THE WINDOW, RESULTING IN A SCHOTTKY BARRIER DEVICE HAVING A GOOD BACKWARD CHARACTERISTIC.

Inventors

• 👤 G Kano
• 👤 H Hasegawa
• 👤 I Teramoto
• 👤 H Iwasa
• 👤 O Hoshida
• 👤 S Fujiwara
• 👤 M Iizuka

Bibliographic Details