Patent US4905061A successfully refreshed from Google Patents.
US4905061A
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Schottky gate field effect transistor
Assignee: Oki Electric Industry Co Ltd
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Filing: 1988-10-04
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Granted: 1990-02-27
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Expires: 2008-10-04
Abstract
Abstract In a Schottky gate field effect transistor comprising a channel formed by doping donor ions in the surface layer of a compound semiconductor (e.g., GaAs) substrate and performing heat treatment, a Schottky gate electrode formed over the channel, and a source electrode and a drain electrode formed on the respective sides of the Schottky gate electrode, a first and a second regions are formed by implantation of ions which are to become carrier killers, to have respective concentration peaks shallower and deeper than the concentration peak of the donor ions of the channel.
Inventors
- 👤 Kazuhiko Ohmuro
- 👤 Hiroshi Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/13; H10D62/149; H10D62/161; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/051
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
130 words
A Schottky gate field effect transistor comprising: a compound semiconductor substrate formed of GaAs; a channel formed by ion-implanting Si ions as donor ions in the surface layer of the substrate and performing heat treatment; a Schottky gate electrode formed over the channel; a source electrode and a drain electrode formed on respective sides of the Schottky gate electrode; a first region formed by implantation of C ions which are to become carrier killers and having a concentration peak at a part shallower than the concentration peak of the donor ions of the channel; and a second region formed by implantation of C ions which are to become carrier killers and having a concentration peak at a part deeper than the concentration peak of the donor ions of the channel.
Claim 2
Dependent Claim
130 words
A Schottky gate field effect transistor comprising: a compound semiconductor substrate formed of GaAs; a channel formed by ion-implanting Si ions as donor ions in the surface layer of the substrate and performing heat treatment; a Schottky gate electrode formed over the channel; a source electrode and a drain electrode formed on respective sides of the Schottky gate electrode; a first region formed by implantation of C ions which are to become carrier killers and having a concentration peak at a part shallower than the concentration peak of the donor ions of the channel; and a second region formed by implantation of C ions which are to become carrier killers and having a concentration peak at a part deeper than the concentration peak of the donor ions of the channel.
Claim 3
Dependent Claim
63 words
A transistor according to claim 1, wherein the first region is formed by implantation of C ions at an energy of about 50 keV and with a dose of about 2×10 12 /cm 2 , and the second region is formed by implantation of C ions at an energy of about 80 keV and with a dose of 1×10 12 /cm 2 .
Claim 4
Dependent Claim
34 words
A transistor acording to claim 2, wherein said channel is formed by implantation of Si ions at an energy of about 60 keV and with a dose of about 7×10 12 /cm 2 .
References Cited (Backward Citations)
US3700978A
Cited
DE2425382A1
Cited
DE2433839A1
Cited
DE2543654A1
Cited
US4193079A
Cited
EP0013340A1
Cited
GB2046993A
Cited
US4306916A
Cited
US4469528A
Cited
US4601095A
Cited
EP0092266A1
Cited
EP0112657A2
Cited
JPH0654479A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |