Patent US1066963A successfully refreshed from Google Patents.
US4905057A
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US
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Semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1989-03-17
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Granted: 1990-02-27
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Expires: 2009-03-17
Abstract
Abstract A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.
Inventors
- 👤 Akio Ohishi
- 👤 Takao Kuroda
- 👤 Shinji Tsuji
- 👤 Motohisa Hirao
- 👤 Hiroyoshi Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:45
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
115 words
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein said semiconductor structure includes at least one InGaAsP layer on each of the opposed sides of the mesa stripe, the energy band width of the InGaAsP layer being at least 1.3 eV and no greater than 1.4 eV.
Claim 2
Dependent Claim
115 words
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein said semiconductor structure includes at least one InGaAsP layer on each of the opposed sides of the mesa stripe, the energy band width of the InGaAsP layer being at least 1.3 eV and no greater than 1.4 eV.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein the thickness of the InGaAsP layer is at least 0.01 μm.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein the active layer has at least one InGaAsP sub-layer.
Claim 5
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein a further semiconductor layer is formed on the semiconductor structure and on the mesa stripe so as to bury the mesa stripe.
Claim 6
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein the substrate is an n-type substrate, the at least one InGaAsP layer being a p-type InGaAsP layer provided on the n-type substrate, adjacent thereto.
Claim 7
Dependent Claim
16 words
A semiconductor device according to claim 5, wherein the n-type substrate is an n-type InP substrate.
Claim 8
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein the at least one InGaAsP layer is a p-type InGaAsP layer, and wherein the semiconductor structure further includes an n-type layer so as to form said p-n junction.
Claim 9
Dependent Claim
16 words
A semiconductor device according to claim 7, wherein the n-type layer is an n-type InP layer.
Claim 10
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein the at least one InGaAsP layer is an n-type InGaAsP layer, and wherein the semiconductor structure further includes a p-type layer so as to form said p-n junction.
Claim 11
Dependent Claim
16 words
A semiconductor device according to claim 9, wherein said p-type layer is a p-type InP layer.
Claim 12
Dependent Claim
162 words
A semiconductor device according to claim 1, wherein the semiconductor structure includes at least first, second and third layers, sequentially stacked one on the other, on the substrate, the substrate being made of a material selected from the group consisting of n-type InP, p-type InP, n-type GaAs and p-type GaAs; the first layer being made of a material selected from the group consisting of n-type InGaAsP, p-type InGaAsP, p-type InP, n-type InP, p-type InGaP, n-type InGaP, and n-type InAsP; the second layer being made of a material selected from the group consisting of n-type InGaAsP, p-type InGaAsP, p-type InP and n-type InP; and the third layer being made of a material selected from the group consisting of n-type InGaAsP, p-type InGaAsP, p-type InP, n-type InP, p-type InGaP, n-type InGaP, p-type InAsP and n-type InAsP, with at least one of the first, second and third layers being of InGaAsP, and with two of the first, second and third layers forming said p-n junction.
Claim 13
Dependent Claim
50 words
A semiconductor device according to claim 11, wherein a fourth semiconductor layer is provided on the third semiconductor layer, so as to bury the mesa stripe, the fourth semiconductor layer being made of a material selected from the group consisting of p-type InP, n-type InP, p-type GaAs and n-type GaAs.
Claim 14
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein the semiconductor structure includes a second p-n junction.
Claim 15
Dependent Claim
33 words
A semiconductor device according to claim 1, further including, on said substrate, at least one hetero-junction bipolar transistor, the base layer of said at least one hetero-junction bipolar transistor being formed of InGaAsP.
Claim 16
Dependent Claim
48 words
A semiconductor device according to claim 14, wherein the InGaAsP of the base layer of the at least one hetero-junction bipolar transistor has an energy band width of at least 1.2 eV and not more than 1.4 eV so as to suppress increase in leakage current with time.
Claim 17
Dependent Claim
30 words
A semiconductor device according to claim 15, wherein the InGaAsP of said base layer has an energy band width of at least 1.3 eV and not more than 1.4 eV.
Claim 18
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein the InGaAsP layer having an energy band width of at least 1.3 eV and no greater than 1.4 eV constitutes a current inhibiting layer of the semiconductor device.
Claim 19
Dependent Claim
37 words
A semiconductor device according to claim 17, wherein the energy band width of InGaAsP layer is at least 1.3 eV and no greater than 1.4 eV such that substantially no increase in threshold current occurs with time.
Claim 20
Dependent Claim
37 words
A semiconductor device according to claim 1, wherein the energy band width of InGaAsP layer is at least 1.3 eV and no greater than 1.4 eV such that substantially no increase in threshold current occurs with time.
Claim 21
Dependent Claim
30 words
A semiconductor device according to claim 14, wherein said base layer is of InGaAsP having such an energy band width that increase in leakage current with time can be suppressed.
Claim 22
Dependent Claim
60 words
A semiconductor device comprising a bipolar transistor having emitter and collector semiconductor layers separated by a base layer, with respective electrodes being provided to each of the emitter, base and collector layers, wherein the base layer is formed of InGaAsP, the energy band width of the InGaAsP base layer being at least 1.2 eV and not more than 1.4 eV.
Claim 23
Dependent Claim
60 words
A semiconductor device comprising a bipolar transistor having emitter and collector semiconductor layers separated by a base layer, with respective electrodes being provided to each of the emitter, base and collector layers, wherein the base layer is formed of InGaAsP, the energy band width of the InGaAsP base layer being at least 1.2 eV and not more than 1.4 eV.
Claim 24
Dependent Claim
28 words
A semiconductor device according to claim 21, wherein the energy band width of the InGaAsP base layer is at least 1.3 eV and not more than 1.4 eV.
Claim 25
Dependent Claim
29 words
A semiconductor device according to claim 21, the energy band width of the InGaAsP being an energy band width so as to suppress leakage increase in current with time.
Claim 26
Dependent Claim
101 words
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein the p-n junction is a junction formed by implanting ions into semiconductor material forming the semiconductor structure so as to provide the p-n junction.
Claim 27
Dependent Claim
101 words
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein the p-n junction is a junction formed by implanting ions into semiconductor material forming the semiconductor structure so as to provide the p-n junction.
Claim 28
Dependent Claim
48 words
A semiconductor device according to claim 24, wherein the semiconductor material is a p-type material, and the ions implanted are selected from the group consisting of S, Se and Si, to convert a portion of the p-type material to n-type material so as to provide the p-n junction.
Claim 29
Dependent Claim
49 words
A semiconductor device according to claim 24, wherein the semiconductor material is an n-type material, and the ions implanted are selected from the group consisting of Zn, Cd, Be and Mg, to convert a portion of the n-type material to p-type material so as to provide the p-n junction.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |