US4710936A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optoelectronic semiconductor device
Assignee: Panasonic Holdings Corp
•
Filing: 1985-04-12
•
Granted: 1987-12-01
•
Expires: 2005-04-12
Abstract
Abstract A semiconductor laser device has a double hetero construction such that a direct transition type semiconductor layer having a high refractive index is placed between direct transition type semiconductor layers having a low refractive index, and has an optical resonator formed in the direct transition type semiconductor layer of a high refractive index for enabling lasing operation. The condition of lasing is controllable by the transistor of the double hetero construction. The semiconductor laser device is of transistor structure and yet it constitutes integrated circuits for lasing. As an optoelectronic device, it can be advantageously employed in optical-fiber communication systems and optical information systems.
Inventors
- 👤 Jun Shibata
- 👤 Hiroyuki Serizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
172 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes.
Claim 2
Dependent Claim
172 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes.
Claim 3
Dependent Claim
18 words
An optoelectronic semiconductor device as set forth in claim 1, wherein said base layer includes an optical resonator.
Claim 4
Dependent Claim
26 words
An optoelectronic semiconductor device as set forth in claim 2, wherein said optical resonator comprises a pair of opposed light-reflective end surfaces of said base layer.
Claim 5
Dependent Claim
27 words
An optoelectronic semiconductor device as set forth in claim 3, wherein said pair of opposed end surfaces of said base layer are formed by cleavage or grating.
Claim 6
Dependent Claim
28 words
An optoelectronic semiconductor device as set forth in claim 1, wherein said current supplying layers have a refractive index which is lower than that of said base layer.
Claim 7
Dependent Claim
206 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes; and wherein said base electrodes are formed on said respective current supplying layers by thermal diffusion or ion implantation effected through said emitter layer until the zinc or cadmium reaches said current supplying layers.
Claim 8
Dependent Claim
206 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes; and wherein said base electrodes are formed on said respective current supplying layers by thermal diffusion or ion implantation effected through said emitter layer until the zinc or cadmium reaches said current supplying layers.
Claim 9
Dependent Claim
41 words
An optoelectronic semiconductor device as set forth in claim 6, wherein a plurality of hetero-junctions of said base layer and emitter layer are selectively provided on said collector layer, and wherein a base layer of each hetero-junction includes an optical resonator.
Claim 10
Dependent Claim
47 words
An optoelectronic semiconductor device as set forth in claim 6, wherein said base layer has a portion selectively made thicker than the remaining portion of said base layer so that electron injection from said emitter layer is selectively effected into said thicker portion of said base layer.
Claim 11
Dependent Claim
198 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes and wherein the amount of light emitted is controlled by selectively varying the amount of current supplied to said layer by each of said base electrodes.
Claim 12
Dependent Claim
198 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes and wherein the amount of light emitted is controlled by selectively varying the amount of current supplied to said layer by each of said base electrodes.
Claim 13
Dependent Claim
18 words
An optoelectronic semiconductor device as set forth in claim 9, wherein said base layer includes an optical resonator.
Claim 14
Dependent Claim
231 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes and wherein the amount of light emitted is controlled by selectively varying the amount of current supplied to said layer by each of said base electrodes; and wherein said base electrodes are formed of zinc or cadmium formed by thermal diffusion or ion implantation effected through said emitter layer until said zinc or cadmium reaches said current supplying layers.
Claim 15
Dependent Claim
231 words
In an optoelectronic semiconductor device, the improvement comprising: a bipolar transistor including, a collector layer of a first type of conductivity; a base layer of a second type of conductivity disposed on said collector layer, and an emitter layer of said first type of conductivity disposed on said base layer; current supplying layers disposed on both sides of said base layer and composed of a semiconductor material of said second type of conductivity, said current supplying layers being electrically coupled to said base layer for supplying current thereto; and base electrodes respectively disposed on said current supplying layers; said base layer being composed of a direct transition type semiconductor and having a band gap energy which is lower than the band gap energy of both said emitter and collector layers and having a refractive index which is higher than the refractive index of both said emitter and collector layers; wherein said base layer emits light when said current is supplied to said base layer through at least one of said base electrodes and wherein the amount of light emitted is controlled by selectively varying the amount of current supplied to said layer by each of said base electrodes; and wherein said base electrodes are formed of zinc or cadmium formed by thermal diffusion or ion implantation effected through said emitter layer until said zinc or cadmium reaches said current supplying layers.
References Cited (Backward Citations)
US3369132A
Cited
US3278814A
Cited
JPS425572Y1
Cited
JPS5316590A
Cited
US4430741A
Cited
JPS57164591A
Cited
US4513423A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |