Buried heterostructure laser diode

Claim 2

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on a top surface of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces in a stripe geometry, a second semiconductor layer having a second conductivity type and a band gap larger than that of said first layer and having a first region covering a top surface of said first layer, a second region covering a side surface of each of said first layer and said mesa portion, and a third region covering the other side surfaces of said first layer and said mesa portion, a pair of third semiconductor layers provided respectively on said second and third regions of said second layer and having said first conductivity type and a band gap larger than that of said first layer, and a fourth semiconductor layer commonly provided on the top surfaces of said second layer and said third layers and having said second conductivity type and a band gap larger than that of said first layer, said electrodes being provided on said principal surfaces.

Claim 3

A buried heterostruture laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on said base semiconductor region except for a pair of side surfaces of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces, a second semiconductor layer commonly provided on said first layer and said side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second semiconductor layer having a top region covering a top surface of said mesa portion, a third semiconductor layer provided on said second layer except for said top region and having said first conductivity type and a band gap larger than that of said first layer, and a fourth semiconductor layer commonly provided on said top region of said second layer and said third layer and having said second conductivity type and a band gap larger than that of said first layer.

Claim 4

A buried heterostruture laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on said base semiconductor region except for a pair of side surfaces of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces, a second semiconductor layer commonly provided on said first layer and said side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second semiconductor layer having a top region covering a top surface of said mesa portion, a third semiconductor layer provided on said second layer except for said top region and having said first conductivity type and a band gap larger than that of said first layer, and a fourth semiconductor layer commonly provided on said top region of said second layer and said third layer and having said second conductivity type and a band gap larger than that of said first layer.

Claim 5

A buried heterostructure laser diode as claimed in claim 2, in which said base semiconductor region consists of InP having a crystalline surface of (100), and said mesa portion extends in a crystalline direction of <011>, said first layer consisting of InGaAsP, and said second, third and fourth layers consisting of either InP or InGaAsP.

Claim 6

A buried heterostructure laser diode as claimed in claim 3, in which said top surface of said mesa portion has a width of 0.5 μm to 3 μm and a height of 3 μm to 4 μm.

Claim 7

A buried heterostructure laser diode as claimed in claim 4, which each of said first, second and third layers has a thickness smaller than the height of said mesa portion.

Claim 8

A buried heterostructure laser diode as claimed in claim 2, in which said base semiconductor region includes a semiconductor substrate and a buffer layer provided on said semiconductor substrate.

Claim 9

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semicoductor crystal including an InP substrate having a (100) oriented or nearly (100) oriented surface and having a first conductivity type, said InP substrate further having a mesa portion elongated along a <011> direction between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including an InGaAsP active layer provided on said InP substrate except for a pair of said surfaces of said mesa portion and extending between said pair of reflective end surfaces, an InP or InGaAsP first clad layer commonly provided on said active layer and said side surfaces of said mesa portion and having a second conductivity type, InP or InGaAsP current blocking layers separately provided on said first clad layer except for a region of said first clad layer covering a top surface of said mesa portion and having said first conductivity type, and an InP or InGaAsP second clad layer commonly provided on said top region of said first clad layer and said current blocking layer and having said second conductivity type.

Claim 10

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semicoductor crystal including an InP substrate having a (100) oriented or nearly (100) oriented surface and having a first conductivity type, said InP substrate further having a mesa portion elongated along a <011> direction between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including an InGaAsP active layer provided on said InP substrate except for a pair of said surfaces of said mesa portion and extending between said pair of reflective end surfaces, an InP or InGaAsP first clad layer commonly provided on said active layer and said side surfaces of said mesa portion and having a second conductivity type, InP or InGaAsP current blocking layers separately provided on said first clad layer except for a region of said first clad layer covering a top surface of said mesa portion and having said first conductivity type, and an InP or InGaAsP second clad layer commonly provided on said top region of said first clad layer and said current blocking layer and having said second conductivity type.

Claim 11

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semiconductor crystal including a base semiconductor region having a mesa portion protruding from a pair of flat portions and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including first semiconductor layers selectively provided on a top surface of said mesa portion and on said pair of flat portions and having a band gap smaller than that of said base region, a second semiconductor layer commonly provided on said first layers and on a pair of side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layers, a pair of third semiconductor layers selectively provided on a pair of surfaces of said second layer opposite said side surfaces of said mesa portion and flat portions of said base semiconductor region, respectively, and having said first conductivity type and a band gap larger than that of said first layers, and a fourth semiconductor layer commonly provided on said second layer and said third layers and having said second conductivity type and band gap larger than that of said first layers, each of said first, second and third layers having a thickness at said flat portions smaller than a height of said mesa portion.

Claim 12

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes provided on said principal surfaces, said semiconductor crystal including a base semiconductor region having a mesa portion protruding from a pair of flat portions and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including first semiconductor layers selectively provided on a top surface of said mesa portion and on said pair of flat portions and having a band gap smaller than that of said base region, a second semiconductor layer commonly provided on said first layers and on a pair of side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layers, a pair of third semiconductor layers selectively provided on a pair of surfaces of said second layer opposite said side surfaces of said mesa portion and flat portions of said base semiconductor region, respectively, and having said first conductivity type and a band gap larger than that of said first layers, and a fourth semiconductor layer commonly provided on said second layer and said third layers and having said second conductivity type and band gap larger than that of said first layers, each of said first, second and third layers having a thickness at said flat portions smaller than a height of said mesa portion.

Claim 13

A buried heterostructure laser diode as claimed in claim 8, in which said semiconductor crystal further includes a fifth semiconductor layer provided between said fourth layer and one of said electrodes.

Claim 14

A buried heterostructure laser diose as claimed in claim 9, in which said fifth layer has said first conductivity type, except for a stripe region of said fifth layer opposite said top surface of said mesa portion having said second conductivity type and extending from said one electrode to said fourth layer.

Claim 15

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on a top surface of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces in a stripe geometry, a second semiconductor layer commonly provided on said first layer and on portions of said base semiconductor region uncovered by said first layer thereby covering side surfaces of said first layer and side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second layer having a protruding portion corresponding to said mesa portion, a third semiconductor layer provided on said second layer and having said first conductivity type and a band gap larger than that of said first layer, and a fourth semiconductor layer provided on said third layer and having said first conductivity type and a band gap larger than that of said first layer, said electrodes being provided on said fourth layer and on the bottom of said base semiconductor region, said fourth layer and a part of said third layer being converted into said second conductivity type, the converted portion of said third layer extending from said fourth layer to said protruding portion of said second layer.

Claim 16

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on a top surface of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces in a stripe geometry, a second semiconductor layer commonly provided on said first layer and on portions of said base semiconductor region uncovered by said first layer thereby covering side surfaces of said first layer and side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second layer having a protruding portion corresponding to said mesa portion, a third semiconductor layer provided on said second layer and having said first conductivity type and a band gap larger than that of said first layer, and a fourth semiconductor layer provided on said third layer and having said first conductivity type and a band gap larger than that of said first layer, said electrodes being provided on said fourth layer and on the bottom of said base semiconductor region, said fourth layer and a part of said third layer being converted into said second conductivity type, the converted portion of said third layer extending from said fourth layer to said protruding portion of said second layer.

Claim 17

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on a top surface of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces in a stripe geometry, a second semiconductor layer commonly provided on said first layer and on portions of said base semiconductor region uncovered by said first layer thereby covering side surfaces of said first layer and side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second layer having a protruding portion corresponding to said mesa portion, a third semiconductor layer provided on said second layer and having a band gap larger than that of said first layer, said third semiconductor layer having a first portion of said first conductivity type and a second portion overlying said first portion and having said second conductivity type, said second portion contacting said protruding portion of said second layer, and a fourth semiconductor layer provided on said third layer and having said second conductivity type and a band gap larger than that of said first layer, said electrodes being provided on said fourth layer and on the bottom of said base semiconductor region.

Claim 18

A buried heterostructure laser diode comprising a semiconductor crystal having a pair of principal surfaces and a pair of reflective end surfaces constituting an optical resonator, and a pair of electrodes, said semiconductor crystal including a base semiconductor region having a mesa portion and having a first conductivity type, said mesa portion being elongated between said pair of reflective end surfaces in a stripe geometry, said semiconductor crystal further including a first semiconductor layer provided on a top surface of said mesa portion and having a band gap smaller than that of said base region and extending between said pair of reflective end surfaces in a stripe geometry, a second semiconductor layer commonly provided on said first layer and on portions of said base semiconductor region uncovered by said first layer thereby covering side surfaces of said first layer and side surfaces of said mesa portion and having a second conductivity type and a band gap larger than that of said first layer, said second layer having a protruding portion corresponding to said mesa portion, a third semiconductor layer provided on said second layer and having a band gap larger than that of said first layer, said third semiconductor layer having a first portion of said first conductivity type and a second portion overlying said first portion and having said second conductivity type, said second portion contacting said protruding portion of said second layer, and a fourth semiconductor layer provided on said third layer and having said second conductivity type and a band gap larger than that of said first layer, said electrodes being provided on said fourth layer and on the bottom of said base semiconductor region.