Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation

Claim 1

A method for fabricating a pseudo uniphase charge coupled device cell comprising the steps of: forming a gate insulating oxide film layer over the doped surface layer charge flowpath of a single crystal semiconductor substrate member; implanting areas of said oxide layer covered substrate member along said flowpath predetermined as clock well loci with impurity ions of predetermined quantity, energy level and type, the non-clock well areas of said substrate being shielded from ion implant by a removable shielding pattern of photo responsive resistive material; covering said implanted clock well loci and an additional non-charged barrier area immediately preceding each said clock well locus along said flowpath in said substrate with first conductive areas of polysilicon gate material; embedding the substrate regions intermediate said polysilicon gate material regions along said flowpath with a second dose of impurity ions of predetermined type, quantity and energy level; said polysilicon gate material areas determining, as self-aligning masks, the substrate region subjected to said embedding; depositing second areas of conductive gate material in the flowpath regions intermediate said polysilicon gate material areas, said deposited second area gate material extending from a flowpath point spaced a predetermined distance apart from the trailing edge of each preceding polysilicon gate material area to a region of electrically insulated overlap substantially covering said gate charge barrier area of the next adjacent polysilicon gate material area along said flowpath; impregnating said predetermined distance apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said preceding polysilicon gate material area together with said second area of conductive gate material determining, as self-aligning masks, the substrate region extent of said impregnating predetermined type impurity ions in each spaced apart flowpath area; and instilling said predetermined spaced apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnating impurity ions, said preceding polysilicon gate material area together with said second area of conductive gate material also determining, as self-aligning masks, the substrate region extent of said instilled impurity ions in each spaced apart flowpath area.

Claim 2

A method for fabricating a pseudo uniphase charge coupled device cell comprising the steps of: forming a gate insulating oxide film layer over the doped surface layer charge flowpath of a single crystal semiconductor substrate member; implanting areas of said oxide layer covered substrate member along said flowpath predetermined as clock well loci with impurity ions of predetermined quantity, energy level and type, the non-clock well areas of said substrate being shielded from ion implant by a removable shielding pattern of photo responsive resistive material; covering said implanted clock well loci and an additional non-charged barrier area immediately preceding each said clock well locus along said flowpath in said substrate with first conductive areas of polysilicon gate material; embedding the substrate regions intermediate said polysilicon gate material regions along said flowpath with a second dose of impurity ions of predetermined type, quantity and energy level; said polysilicon gate material areas determining, as self-aligning masks, the substrate region subjected to said embedding; depositing second areas of conductive gate material in the flowpath regions intermediate said polysilicon gate material areas, said deposited second area gate material extending from a flowpath point spaced a predetermined distance apart from the trailing edge of each preceding polysilicon gate material area to a region of electrically insulated overlap substantially covering said gate charge barrier area of the next adjacent polysilicon gate material area along said flowpath; impregnating said predetermined distance apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said preceding polysilicon gate material area together with said second area of conductive gate material determining, as self-aligning masks, the substrate region extent of said impregnating predetermined type impurity ions in each spaced apart flowpath area; and instilling said predetermined spaced apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnating impurity ions, said preceding polysilicon gate material area together with said second area of conductive gate material also determining, as self-aligning masks, the substrate region extent of said instilled impurity ions in each spaced apart flowpath area.

Claim 17

A method for fabricating a pseudo uniphase charge coupled device cell comprising the steps of: forming a gate insulating oxide film layer over the doped surface layer charge flowpath of a single crystal semiconductor substrate member; implanting areas of said oxide layer covered substrate member along said flowpath predetermined as clock well loci with impurity ions of predetermined quantity, energy level and type, the non-clock well areas of said substrate being shielded from ion implant by a removable shielding pattern of photo responsive resistive material; covering said implanted clock well loci and an additional non-charged barrier area immediately preceding each said clock well locus along said flowpath in said substrate with conductive areas of polysilicon gate material; embedding the substrate regions intermediate said polysilicon gate material regions along said flowpath with a second dose of implanted impurity ions of predetermined type, quantity and energy level; said polysilicon gate material areas determining, as self-aligning masks, the substrate region subjected to said embedding implant; depositing implanting ion resistive material into the flowpath regions intermediate said polysilicon gate material areas, said deposited material extending from a flowpath point spaced a predetermined distance apart from the trailing edge of the preceding polysilicon gate material area to a region of electrically insulated overlap substantially covering of the leading edge portion of the next adjacent polysilicon gate material area along said flowpath; impregnating said predetermined distance apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said preceding polysilicon gate material area together with said implanting ion resistive material determining, as masks, the substrate region extent of said impregnating predetermined type impurity ions in each distance apart flowpath area; and instilling said distance apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnating impurity ions, said preceding polysilicon gate material area together with said implanting ion resistive material also determining, as masks, the substrate region extent of said instilling impurity ions in each distance apart flowpath area.

Claim 18

A method for fabricating a pseudo uniphase charge coupled device cell comprising the steps of: forming a gate insulating oxide film layer over the doped surface layer charge flowpath of a single crystal semiconductor substrate member; implanting areas of said oxide layer covered substrate member along said flowpath predetermined as clock well loci with impurity ions of predetermined quantity, energy level and type, the non-clock well areas of said substrate being shielded from ion implant by a removable shielding pattern of photo responsive resistive material; covering said implanted clock well loci and an additional non-charged barrier area immediately preceding each said clock well locus along said flowpath in said substrate with conductive areas of polysilicon gate material; embedding the substrate regions intermediate said polysilicon gate material regions along said flowpath with a second dose of implanted impurity ions of predetermined type, quantity and energy level; said polysilicon gate material areas determining, as self-aligning masks, the substrate region subjected to said embedding implant; depositing implanting ion resistive material into the flowpath regions intermediate said polysilicon gate material areas, said deposited material extending from a flowpath point spaced a predetermined distance apart from the trailing edge of the preceding polysilicon gate material area to a region of electrically insulated overlap substantially covering of the leading edge portion of the next adjacent polysilicon gate material area along said flowpath; impregnating said predetermined distance apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said preceding polysilicon gate material area together with said implanting ion resistive material determining, as masks, the substrate region extent of said impregnating predetermined type impurity ions in each distance apart flowpath area; and instilling said distance apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnating impurity ions, said preceding polysilicon gate material area together with said implanting ion resistive material also determining, as masks, the substrate region extent of said instilling impurity ions in each distance apart flowpath area.

Claim 21

A method of charge coupled device cell fabrication comprising the steps of: forming a plurality of ion implanted clock well loci in the doped surface layer charge flowpath of a semiconductor substrate member; disposing conductive polysilicon gate electrodes over the combination of each clock well loci and a charge free barrier area preceding each said clock well loci; embedding the flowpath region intermediate said gate electrodes with second doses of implanted impurity ion of predetermined type, quantity and energy level; depositing second areas of conductive gate material in the flowpath regions intermediate said polysilicon gate electrodes, said deposited second area gate material extending from a flowpath point predetermined spaced apart from the trailing edge of each preceding polysilicon gate electrode to a region of electrically insulated overlap substantially covering the charge free barrier area of the next adjacent polysilicon gate along said flowpath; impregnating said predetermined spaced apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said predetermined polysilicon gate together with said second area of conductive gate material determining, as self-aligning masks, the substrate region extent of said impregnating impurity ions in each spaced apart flowpath area; and instilling said predetermined spaced apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnated ions, said preceding polysilicon gate together with said second area of conductive gate material also determining, as self-aligning masks, the substrate region extent of said instilled impurity ions in each spaced apart flowpath area.

Claim 22

A method of charge coupled device cell fabrication comprising the steps of: forming a plurality of ion implanted clock well loci in the doped surface layer charge flowpath of a semiconductor substrate member; disposing conductive polysilicon gate electrodes over the combination of each clock well loci and a charge free barrier area preceding each said clock well loci; embedding the flowpath region intermediate said gate electrodes with second doses of implanted impurity ion of predetermined type, quantity and energy level; depositing second areas of conductive gate material in the flowpath regions intermediate said polysilicon gate electrodes, said deposited second area gate material extending from a flowpath point predetermined spaced apart from the trailing edge of each preceding polysilicon gate electrode to a region of electrically insulated overlap substantially covering the charge free barrier area of the next adjacent polysilicon gate along said flowpath; impregnating said predetermined spaced apart substrate flowpath areas with a third dose of virtual barrier forming impurity ions of predetermined type, quantity and energy level, said predetermined polysilicon gate together with said second area of conductive gate material determining, as self-aligning masks, the substrate region extent of said impregnating impurity ions in each spaced apart flowpath area; and instilling said predetermined spaced apart substrate flowpath areas with a fourth dose of virtual gate forming impurity ions of predetermined type, quantity and energy level, and electrical polarity opposite of said impregnated ions, said preceding polysilicon gate together with said second area of conductive gate material also determining, as self-aligning masks, the substrate region extent of said instilled impurity ions in each spaced apart flowpath area.