Method and apparatus for using surface trap recombination in solid state imaging devices

Claim 2

A charge transfer imaging device having charge removal capabilities comprising: a semiconductor substrate of one conductivity type having a pair of spaced regions of higher impurity level of said one conductivity type and including means to effect charge transfer along a channel therein, an insulating layer on said substrate over said channel, at least two electrodes disposed over said insulating layer, said spaced regions being disposed between said electrodes, first means coupled to said electrodes for receiving and applying to said electrodes charge transfer clocking pulses, a charge removal gate disposed between said spaced regions and adjacent and spaced from said electrodes, and second means operable in a first mode to apply pulses of a first amplitude sufficient to remove charge to reduce blooming and operable in a second mode to apply pulses of a higher amplitude than said first amplitude in order to provide imaging exposure control coupled to said charge removal gate for applying pulses to said charge removal gate in order to remove charge through electron-hole recombination through interface traps of electrons and holes.

Claim 3

The imager device of claim 1 and further wherein: said means for applying pulses is successively operable in said first and second modes for decreasing the amplitude of the pulses from the exposure control level to the reduced blooming level in order to vary the effective gamma of the imaging device.

Claim 4

The device of claim 1 and further comprising: a buried channel of opposite conductivity type for charge transfer, and virtual phase means including successive regions of impurity concentrations higher than said substrate.

Claim 5

The device of claim 3 wherein said clocking pulses exceed the surface pinning threshold of said imaging device and wherein the frequency of said clocking pulses is sufficient to remove charge from said imaging device by an electron-hole recombination process through interface traps of electrons and holes.

Claim 6

The device of claim 1 wherein said conductive layer forms a charge coupled device having three phase electrodes, one electrode being held at a low dc potential to block charge transfer, a second electrode held high to store charge and a third electrode forming said charge removal gate for receiving clocking pulses.

Claim 7

A charge transfer imaging device having charge control properties comprising: a semiconductor substrate of one conductivity type including a channel for charge transfer, an insulating layer on said substrate over said channel, a plurality of spaced apart conductive electrodes disposed on said insulating layer over said channel, said channel divided into a clocked phase and a virtual phase between each adjacent electrodes, each phase including a storage and a transfer region, each said clocked phase and virtual phase comprising a cell of at least two regions having different impurity profiles, and a charge control gate electrode disposed between adjacent electrodes for receiving charge control clocking pulses to remove charge from said device by electron-hole recombination through interface traps of electrons and holes wherein the device is clocked in an integration mode and a fast shift mode, in said integration mode said conductive electrode held at a dc potential and said charge control gate pulsed with said charge control clocking pulses to remove overflow charge to reduce blooming, in said fast shift mode said conductive electrode pulsed to facilitate fast charge transfer and said charge control gate held at a dc potential.

Claim 8

A charge transfer imaging device having charge control properties comprising: a semiconductor substrate of one conductivity type including a channel for charge transfer, an insulating layer on said substrate over said channel, a plurality of spaced apart conductive electrodes disposed on said insulating layer over said channel, said channel divided into a clocked phase and a virtual phase between each adjacent electrodes, each phase including a storage and a transfer region, each said clocked phase and virtual phase comprising a cell of at least two regions having different impurity profiles, and a charge control gate electrode disposed between adjacent electrodes for receiving charge control clocking pulses to remove charge from said device by electron-hole recombination through interface traps of electrons and holes wherein the device is clocked in an integration mode and a fast shift mode, in said integration mode said conductive electrode held at a dc potential and said charge control gate pulsed with said charge control clocking pulses to remove overflow charge to reduce blooming, in said fast shift mode said conductive electrode pulsed to facilitate fast charge transfer and said charge control gate held at a dc potential.

Claim 9

The imaging device of claim 6 wherein said charge control gate is pulsed with intermittent bursts of said charge control clocking pulses.

Claim 10

The imaging device of claim 6 wherein said charge control clocking pulses reduce charge during a portion of said integration mode and allow accumulation of charge prior to end of said integration mode to provide effective aperture control of the device.

Claim 11

The imaging device of claim 6 wherein the amplitude of the charge control clocking pulses are lowered during at least a portion of said integration mode to provide an effective gamma different from unity.