Patent US4897367A successfully refreshed from Google Patents.
US4897367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for growing gallium arsenide on silicon substrate
Assignee: Fujitsu Ltd
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Filing: 1989-03-17
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Granted: 1990-01-30
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Expires: 2009-03-17
Abstract
Abstract A GaAs layer having a high crystallinity can be grown over an Si substrate without warping, by process for growing a GaAs layer on an Si substrate, said process comprising: forming a first GaAs layer in the amorphous state on the Si substrate at a first temperature, the first GaAs layer being formed with a thickness allowing formation of a single crystalline layer having a thickness of one to three monomolecular layers; heating the first GaAs layer to change the amorphous state of the first GaAs layer to a single crystalline state; forming an Si layer on the first GaAs layer at a second temperature higher than the first temperature, the Si layer being formed with a thickness having one to six monoatomic layers; forming a second GaAs layer in the amorphous state on the Si layer at the first temperature, the second GaAs layer being formed with a thickness substantially the same as the thickness of the first GaAs layer; heating the second GaAs layer the change the amorphous state of the second GaAs layer to a single crystalline state; and epitaxially growing a third GaAs layer on the second GaAs layer.
Inventors
- 👤 Kazuto Ogasawara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3242; H10P14/3256; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S148/149; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
177 words
A process for growing a GaAs layer on an Si substrate, said process comprising: forming a first GaAs layer in the amorphous state on the Si substrate at a first temperature, the first GaAs layer being formed with a thickness allowing formation of a single crystalline layer having a thickness of one to three monomolecular layers; heating the first GaAs layer to change the amorphous state of the first GaAs layer to a single crystalline state; forming an Si layer on the first GaAs layer at a second temperature higher than the first temperature, the Si layer being formed with a thickness having one to six monoatomic layers; forming a second GaAs layer in the amorphous state on the Si layer at the first temperature, the second GaAs layer being formed with a thickness substantially the same as the thickness of the first GaAs layer; heating the second GaAs layer to change the amorphous state of the second GaAs layer to a single crystalline state; and epitaxially growing a third GaAs layer on the second GaAs layer.
Claim 2
Dependent Claim
177 words
A process for growing a GaAs layer on an Si substrate, said process comprising: forming a first GaAs layer in the amorphous state on the Si substrate at a first temperature, the first GaAs layer being formed with a thickness allowing formation of a single crystalline layer having a thickness of one to three monomolecular layers; heating the first GaAs layer to change the amorphous state of the first GaAs layer to a single crystalline state; forming an Si layer on the first GaAs layer at a second temperature higher than the first temperature, the Si layer being formed with a thickness having one to six monoatomic layers; forming a second GaAs layer in the amorphous state on the Si layer at the first temperature, the second GaAs layer being formed with a thickness substantially the same as the thickness of the first GaAs layer; heating the second GaAs layer to change the amorphous state of the second GaAs layer to a single crystalline state; and epitaxially growing a third GaAs layer on the second GaAs layer.
Claim 3
Dependent Claim
20 words
A process according to claim 1, wherein the first temperature is in a range of 60° C. to 90° C.
Claim 4
Dependent Claim
20 words
A process according to claim 1, wherein the second temperature is in a range of 200° C. to 400° C.
Claim 5
Dependent Claim
41 words
A process according to claim 1, wherein said first and second GaAs layers in the amorphous state are heated to a temperature in a range of 200° C. to 400° C. to change the amorphous state to the single crystalline state.
Claim 6
Dependent Claim
22 words
A process according to claim 1, wherein said third GaAs layer is grown at a temperature of 200° C. to 400° C.
Claim 7
Dependent Claim
32 words
A process according to claim 1, wherein the first and second GaAs layers have a thickness of monomolecular layer when crystallized and the Si layer has a thickness of two monoatomic layers.
Claim 8
Dependent Claim
23 words
A process according to claim 1, wherein the Si substrate has a (100) plane surface with an offset angle of less than ±3°.
Claim 9
Dependent Claim
30 words
A process according to claim 1, wherein the Si substrate is heat treated at a temperature of 1000° C. to 1300° C. before the first GaAs layer is formed thereon.
Claim 10
Dependent Claim
25 words
A process according to claim 1, further forming fourth GaAs layer on the third GaAs layer at a temperature of 450° C. to 580° C.
Claim 11
Dependent Claim
23 words
A process according to claim 9, wherein the third GaAs layer is formed to have a thickness of not less than 100 Å.
Claim 12
Dependent Claim
23 words
A process according to claim 10, wherein the third GaAs layer is formed to have a thickness of 100 Å to 200 Å.
Claim 13
Dependent Claim
25 words
A process according to claim 1, wherein the first to third GaAs layers and the Si layer are formed by a molecular beam epitaxy system.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-29 | 1993-07-31 | 1994-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-29 | 1997-07-31 | 1998-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-29 | 2001-07-31 | 2002-01-30 | $7700.00 | Window Closed / Lapsed |