Semiconductor substrate

Abstract

Abstract PURPOSE:To obtain the semiconductor substrate having the latticematching layer with which the GaAs crystal of good quality will be grown by a method wherein the lattice-matching between Si crystal and GaAs crystal is performed easily and thermal stress is alleviated by interposing the lattice-matching layer, on which multilayer of mixed crystal consisting of Si and a group IV element are laminated, between an Si substrate and a compound semiconductor. CONSTITUTION:A lattice-matching layer 5, on which a plurality of mixed crystal consisting of Si and group IV element are laminated by changing their mixed crystal ratio, is interposed between an Si substrate 1 and a compound semiconductor 2. For example, the superlattice layer 5, consisting of the SiGe mixed crystal containing Si and the Ge as a group IV element, is formed between the Si substrate 1 and a Ge layer 3. On this superlattice layer 5, the first superlattice layer 5a of 100- several 100 Angstrom in thickness consisting of mixed crystal of Si/Si0.5Ge0.5 is formed by lamination from the upper side of the Si substrate 1 and besides, the second superlattice layer 5b of 100-several 100Angstrom in thickness consisting of the mixed crystal of Si0.5Ge0.5/Ge is formed by lamination on the upper surface of the first superlattice layer 5a. A GaAs layer 2 is formed by lamination on the superlattice layer 5 as the Ge layer 3 and the compound semiconductor.

Inventors

• 👤 Yoshinori Yukimoto
• 👤 行本　善則
• 👤 Mari Kato
• 👤 加藤　真理

Bibliographic Details