Compound semiconductor device

Abstract

Abstract PURPOSE:To perform the complete matching of lattice constant in a compound semiconductor device by forming two types of Si, Ge and GaAs, P transition layer varying in tapered state in composition ratio between the crystal of a substrate and a compound semiconductor active layer. CONSTITUTION:The first and second transition layers 4, 5 are sequentially formed on the surface of an Si substrate 3, with Si, Ge of composition in such a manner that the ingredient ratio of Ge is 0 on the surface of the substrate and increases as the thickness of the transition layer increases in a tapered component configuration and the second transition layer 5 contains GaP and GaAs as mixed crystal, the quantity of GaP is reduced in tapered state and is 0 on the outermost surface in the component configuration. Since the complete matching of the lattice constant can be performed in the boundary in this manner, a grown layer of high quality can be obtained, and a semiconductor device having high function and performance can be obtained without fine cracks or the like defect.

Inventors

• 👤 Yasuhiro Ishii
• 👤 Noriyuki Shimano
• 👤 Yoshimoto Fujita

Bibliographic Details