Process for forming insulating film used in thin film electroluminescent device

Claim 2

A process for forming an insulating film which comprises vapor the depositing a thin film of at least one member selected from a group consisting of silicon nitride, silicon oxide and silicon oxynitride on a transparent electroconductive film formed on a transparent substrate by a plasma chemical vapor deposition method with heating the transparent substrate to a substrate temperature of 350 to 550° C.; said transparent electroconductive film being formed of a material selected from the group consisting of IN 2 O 3 (Sn), SnO 2 (Sb), Sn 2 O(P), SnO 2 (Te), SnO 2 (W), SnO 2 (Ce), SnO 2 (F), Cd 2 SnO 4 , Cd 2 SnO 2 , CdO, Au, Ag, Cu, Pd, Pt, Ae, Cr, and Rh and said transparent substrate comprising a glass substrate.

Claim 3

A process according to claim 1, wherein the transparent substrate having the transparent electroconductive film thereon is pre-treated in an oxygen plasma at the substrate temperature of 200 to 550° C. before the vapor deposition.

Claim 4

A process according to claim 1, wherein the transparent substrate having the transparent electroconductive film thereon is pre-treated in an inert gas plasma at the substrate temperature of 200 to 550° C. before the vapor deposition.

Claim 5

A process according to claim 1, wherein the transparent substrate having the transparent electroconductive film thereon is vapor deposited by an insulating material in 1 to 10 Å thickness before the vapor deposition of insulating film.

Claim 6

A process according to claim 4, wherein the insulating material is at least one member selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride and alumina.

Claim 7

A process for producing a thin-film electroluminescent device which comprises: forming a first insulating film of at least one member selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride on transparent electrodes formed on a transparent substrate by a plasma chemical vapor deposition method with heating the transparent substrate to a substrate temperature of 350 to 550° C., said transparent electroconductive film being formed of a material selected from the group consisting of In 2 O 3 (Sn), SnO 2 (Sb), Sn 2 O(P), SnO 2 (Te), SnO 2 (W), SnO 2 (Ce), SnO 2 (F), Cd 2 SnO 4 , Cd 2 SnO 2 , CdO, Au, Ag, Cu, Pd, Pt, Ae, Cr, and Rh and said transparent substrate comprising a glass substrate, forming an emission layer on the first insulating layer, forming a second insulating layer on the emission layer; and forming backside electrodes thereon.

Claim 8

A process for producing a thin-film electroluminescent device which comprises: forming a first insulating film of at least one member selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride on transparent electrodes formed on a transparent substrate by a plasma chemical vapor deposition method with heating the transparent substrate to a substrate temperature of 350 to 550° C., said transparent electroconductive film being formed of a material selected from the group consisting of In 2 O 3 (Sn), SnO 2 (Sb), Sn 2 O(P), SnO 2 (Te), SnO 2 (W), SnO 2 (Ce), SnO 2 (F), Cd 2 SnO 4 , Cd 2 SnO 2 , CdO, Au, Ag, Cu, Pd, Pt, Ae, Cr, and Rh and said transparent substrate comprising a glass substrate, forming an emission layer on the first insulating layer, forming a second insulating layer on the emission layer; and forming backside electrodes thereon.

Claim 9

A process according to claim 6 wherein the transparent substrate having the transparent electrodes thereon is pre-treated in an oxygen plasma at the substrate temperature of 200 to 550° C. before the vapor deposition of the first insulating layer.

Claim 10

A process according to claim 6, wherein the transparent substrate having the transparent electrodes thereon is pre-treated in an inert gas plasma at the substrate temperature of 200 to 550° C. before the vapor deposition of the first insulating layer.

Claim 11

A process according to claim 6, wherein the transparent substrate having the transparent electrodes thereon is vapor deposited by an insulating material in 1 to 10 Å thickness before the vapor deposition of insulating film.

Claim 12

A process according to claim 9, wherein the insulating material is at least one member selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride and alumina.

Claim 13

A process according to claim 1, wherein the thin film is deposited with a thickness of 0.1 to 3μm.

Claim 14

A process according to claim 6, wherein the first insulating film is deposited with a thickness of 0.1 to 3μm.