US4657775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for production of silicon thin film piezoresistive devices
Assignee: Nagano Keiki Seisakusho KK
•
Filing: 1985-12-30
•
Granted: 1987-04-14
•
Expires: 2005-12-30
Abstract
Abstract Semiconductor piezoresistive devices can be obtained by the plasma CVD method, i.e., exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride to deposit on the substrate a thin film of crystalline silicon as a piezoresistive material. In accordance with this method, it is possible to form piezoresistive devices into IC's and also to impart excellent properties thereto.
Inventors
- 👤 Hisanori Shioiri
- 👤 Mitsuhiro Kiuchi
- 👤 Mineo Takayama
- 👤 Toshio Homma
- 👤 Hiroshi Nagasaka
- 👤 Yoshikazu Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:26
CPC Classifications
H; H01; H01C; H01C10/00; H01C10/10; H01C17/00; H01C17/06; H01C17/075
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
51 words
A method for producing silicon thin film piezoresistive devices comprising: exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride, and depositing on the substrate, at a substrate temperature of between 500° C. and 650° C., a thin film of crystalline silicon as a piezoresistive material.
Claim 2
Independent Claim
51 words
A method for producing silicon thin film piezoresistive devices comprising: exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride, and depositing on the substrate, at a substrate temperature of between 500° C. and 650° C., a thin film of crystalline silicon as a piezoresistive material.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein a crystal surface (220) of the thin film of crystalline silicon is oriented substantially perpendicular to the surface of the substrate.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein the substrate is electrically insulated.
Claim 5
Dependent Claim
27 words
The method of claim 1, wherein a mole ratio between the silicon hydride and the boron hydride used for producing the plasma is from 100:0.01 to 100:2.
References Cited (Backward Citations)
US4504518A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-13 | 1990-10-13 | 1991-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-13 | 1994-10-13 | 1995-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-13 | 1998-10-13 | 1999-04-14 | $7700.00 | Window Closed / Lapsed |