Electronic packaging of components incorporating a ceramic-glass-metal composite

Claim 2

A semiconductor casing, comprising: a base component and a lid component both formed from a ceramic-glass-metal composite material, said composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, said composite material further having a composition of; up to about 25 volume % ductile metallic particles for enhancing the flow characteristics of said composite; 15 volume % to about 50 volume % glass for adhering said composite together; the balance ceramic particles having a particle diameter greater than about 1 micron; and said metal and ceramic particles selected so that each has a melting temperature greater than the melting temperature of said glass particles; a metallic leadframe, said leadframe being embedded into said first component; and a sealing glass bonding said second component to said lid component.

Claim 3

The semiconductor casing of claim 1, including said ceramic particles comprising from about 20 to about 80 vol. percent of said composite.

Claim 4

The semiconductor casing of claim 2 including said ceramic particles being from about 1 to about 200 microns in average diameter.

Claim 5

The semiconductor casing of claim 3 including said ceramic particles being selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , Bn and mixtures thereof.

Claim 6

The semiconductor casing of claim 3 including said metallic particles being discontinuously dispersed throughout said composite.

Claim 7

The semiconductor casing of claim 5 including said metallic particles being from about 0.01 to about 50 microns in average diameter.

Claim 8

The semiconductor casing of claim 6 including said metallic particles being selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof.

Claim 9

The semiconductor casing of claim 5 further including the glass matrix being from the group consisting of vitreous and devitrified glass.

Claim 10

The semiconductor casing of claim 5 including said glass matrix being selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silicia, lead-silicate and lead-zinc-borate glasses.

Claim 11

A semicondutor casing adapted to receive a semiconductor device, comprising: a body component having a cavity, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % ductile metallic particles for enhancing the flow characteristics of said composite; 15 volume % to about 50 volume % glass for adhering said composite together; the balance ceramic particles having a particle diameter greater than about 1 micron; and said metal and ceramic particles selected so that each has a melting temperature greater than the melting temperature of said glass particles; a metallic leadframe, said leadframe being embedded into said body component, said leadframe having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means adapted for sealing said cavity.

Claim 12

A semicondutor casing adapted to receive a semiconductor device, comprising: a body component having a cavity, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % ductile metallic particles for enhancing the flow characteristics of said composite; 15 volume % to about 50 volume % glass for adhering said composite together; the balance ceramic particles having a particle diameter greater than about 1 micron; and said metal and ceramic particles selected so that each has a melting temperature greater than the melting temperature of said glass particles; a metallic leadframe, said leadframe being embedded into said body component, said leadframe having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means adapted for sealing said cavity.

Claim 13

The semiconductor casing as in claim 10 further including a metallic element embedded into said body component and having a surface exposed to said cavity, said metallic element being adapted for mounting a semiconductor device.

Claim 14

The semiconductor casing as in claim 11, further including said metallic element extending through said body component to an outer surface thereof whereby said metallic element forms a heat sink.

Claim 15

The semiconductor casing as in claim 12 further including cooling fins extending outward from said heat sink to enhance the cooling of said casing.

Claim 16

The semiconductor casing as in claim 10 further including external leads spot welded to the leadframe.

Claim 17

The semiconductor casing as in claim 11 further including said lid means being of a material selected from the group consisting of metal, alloy, the ceramic-glass-metal composite and ceramics.

Claim 18

The semiconductor casing as in claim 15 further including a sealing glass bonding said body component to said lid means.

Claim 19

The semiconductor casing as in claim 16 further including a seal ring embedded into an outer surface of said body component, said steel ring being adapted for sealing to said lid means.

Claim 20

The semiconductor casing of claim 10 including said metallic particles being discontinuously dispersed through said composite.

Claim 21

The semiconductor casing of claim 18 further including the glass matrix being selected from the group consisting of vitreous and devitrified glass.

Claim 22

A semiconductor casing, comprising: a body component having a cavity, said body component being formed of ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of: up to about 25 volume % deductile metallic particles for enhancing the flow characteristics of said composite; 15 volume % to about 50 volume % glass for adhering said composite together; and the balance ceramic particles having a particle diameter greater than about 1 micron; and said metal and ceramic particles selected so that each has a melting temperature greater than the melting temperature of said glass particles; a metallic cup embedded into said body component, said metallic cup having a surface within said cavity, said surface being adapted to have a semiconductor device bonded thereto, said cup further having sidewalls extending to said surfaces of the casing, the cup further having sidewalls extending to said surface of the casing, the cup further including a flange extending from the sidewalls to form a first portion of an outer surface of the casing and to provide a heat sink for the casing; a leadframe embedded in said body component and having leads ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means disposed against said body component for sealing said cavity.

Claim 23

A semiconductor casing, comprising: a body component having a cavity, said body component being formed of ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of: up to about 25 volume % deductile metallic particles for enhancing the flow characteristics of said composite; 15 volume % to about 50 volume % glass for adhering said composite together; and the balance ceramic particles having a particle diameter greater than about 1 micron; and said metal and ceramic particles selected so that each has a melting temperature greater than the melting temperature of said glass particles; a metallic cup embedded into said body component, said metallic cup having a surface within said cavity, said surface being adapted to have a semiconductor device bonded thereto, said cup further having sidewalls extending to said surfaces of the casing, the cup further having sidewalls extending to said surface of the casing, the cup further including a flange extending from the sidewalls to form a first portion of an outer surface of the casing and to provide a heat sink for the casing; a leadframe embedded in said body component and having leads ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means disposed against said body component for sealing said cavity.

Claim 24

The semiconductor casing as in claim 20 further including a metallic element affixed to the flange and covering a second portion of the outer surface of the casing so as to increase the effective thermal capability of the heat sink.

Claim 25

The semiconductor casing as in claim 21 further comprising ends extending from the flange and up the sides of the casing to further improve the thermal capability of the heat sink.

Claim 26

The semiconductor casing as in claim 22 further comprising ports within the sidewalls to enhance the filling of the cup with said composite.

Claim 27

The semiconductor casing as in claim 20 further including external leads spot welded to the leadframe.

Claim 28

A multilayer circuit device, comprising: a plurality of ceramic-glass-metal substrates, each such substrate having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of: an effective amount comprising up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a layer of an electrically conductive circuit pattern bonded between adjacent ceramic-glass-metal substrates; and conductive means extending through each of said plurality of ceramic-glass-metal substrates to contact said electrically conductive circuit pattern.

Claim 29

A multilayer circuit device, comprising: a plurality of ceramic-glass-metal substrates, each such substrate having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of: an effective amount comprising up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a layer of an electrically conductive circuit pattern bonded between adjacent ceramic-glass-metal substrates; and conductive means extending through each of said plurality of ceramic-glass-metal substrates to contact said electrically conductive circuit pattern.

Claim 30

A hybrid circuit device, comprising: a ceramic-glass-metal substrate having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; an effective amount comprising up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about I micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a layer of an electrically conductive circuit pattern bonded to at least one surface of said substrate; and conductive means extending through said substrate to contact said electrically conductive circuit pattern.

Claim 31

A hybrid circuit device, comprising: a ceramic-glass-metal substrate having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; an effective amount comprising up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about I micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a layer of an electrically conductive circuit pattern bonded to at least one surface of said substrate; and conductive means extending through said substrate to contact said electrically conductive circuit pattern.

Claim 32

A semiconductor casing, comprising: first and second components formed from a ceramic-glass-metal composite material, said composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, said composite material further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic leadframe, said leadframe being embedded into said first component; and a sealing glass bonding said second component to said lid component.

Claim 33

A semiconductor casing, comprising: first and second components formed from a ceramic-glass-metal composite material, said composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, said composite material further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic leadframe, said leadframe being embedded into said first component; and a sealing glass bonding said second component to said lid component.

Claim 34

A semiconductor casing, comprising: a body component having a cavity adapted to receive a semiconductor device, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic leadframe, said leadframe being embedded into said body component, said leadframe having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means adapted for sealing said cavity.

Claim 35

A semiconductor casing, comprising: a body component having a cavity adapted to receive a semiconductor device, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and alloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic leadframe, said leadframe being embedded into said body component, said leadframe having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means adapted for sealing said cavity.

Claim 36

A semiconductor casing, comprising: a body component having a cavity adapted to receive a semiconductor device, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and aloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic cup embedded into said body component, said metallic cup having a surface within said cavity, said surface being adapted to have a semiconductor device bonded thereto, said cup further having sidewalls, extending to said surface of the casing, the cup further including a flange extending from the sidewalls to form a first portion of an outer surface of the casing and to provide a heat sink for the casing; a leadframe embedded in said body component and having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means disposed against said body component for sealing said cavity.

Claim 37

A semiconductor casing, comprising: a body component having a cavity adapted to receive a semiconductor device, said body component being formed of a ceramic-glass-metal composite material having a structure comprising substantially a matrix of said glass with said ceramic and metal particles dispersed therein, and further having a composition of; up to about 25 volume % metallic particles for enhancing the flow characteristics of said composite, said metallic particles selected from the group consisting of aluminum, copper, iron, silver, gold, stainless steel and aloys thereof; 15 volume % to about 50 volume % glass for adhering said composite together, said glass being either vitreous or devitrified and selected from the group consisting of silicate, borosilicate, phosphate, zinc-borosilicate, soda-lime-silica, lead-silicate and lead-zinc-borate glasses; and the balance ceramic particles having a particle diameter greater than about 1 micron selected from the group consisting of Al 2 O 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 , BN and mixtures thereof; a metallic cup embedded into said body component, said metallic cup having a surface within said cavity, said surface being adapted to have a semiconductor device bonded thereto, said cup further having sidewalls, extending to said surface of the casing, the cup further including a flange extending from the sidewalls to form a first portion of an outer surface of the casing and to provide a heat sink for the casing; a leadframe embedded in said body component and having lead ends extending into said cavity and adapted to be connected to a semiconductor device; and lid means disposed against said body component for sealing said cavity.