Semiconductor device IC with DMOS using self-aligned back gate region

Claim 2

A semiconductor device comprising: at least a first element region and a second element region of a second conductivity type formed so as to be electrically isolated from each other on a semiconductor substrate of a first conductivity type; a complementary MOS transistor in which an N-channel MOS tranistor and a P-channel MOS transistor are respectively formed in a first well diffusion layer of the first conductivity type and a second well diffusion layer of the second conductivity type formed in said first element region of the second conductivity type, said second well diffusion layer having an impurity concentration higher than that of said first element region; and a double-diffused MOS transistor including a well diffusion layer of the first conductivity type formed in said second element region of the second conductivity type and a back gate region of the first conductivity type formed so as to be self-aligned with a gate electrode using said electrode as a blocking mask.

Claim 3

A device according to claim 1, wherein the conductivity types of the gate electrodes of said N-channel, P-channel, and double-diffused MOS transistors are different from those of the respective well diffusion layers.

Claim 4

A device according to claim 1, wherein the respective gate electrodes of said N-channel, P-channel, and double-diffused MOS transistors are formed of a polycrystalline silicon layer.

Claim 5

A device according to claim 1, wherein said double-diffused MOS transistor is of a vertical type.

Claim 6

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having at least a first and a second recess; first and second high concentration buried regions of a second conductivity type formed on surfaces of said first and second recesses formed in said semiconductor substrate of the first conductivity type; first and second element regions of the second conductivity type respectively formed in said first and second recesses formed in said semiconductor substrate and having an impurity concentration lower than that of said first and second high concentration buried regions; a complementary MOS transistor in which an N-channel MOS transistor and a P-channel MOS transistor are respectively formed in a first well diffusion layer of the first conductivity type and a second well diffusion layer of the second conductivity type formed in said first element region of the second conductivity type, said second well diffusion layer having an impurity concentration higher than that of said first element region; and a double-diffused MOS transistor including a well diffusion layer of the first conductivity type formed is said second element region of the second conductivity type, a back gate region of the first conductivity type formed so as to be self-aligned with the gate electrode using said electrode as a blocking mask, and wherein the drain region includes said second high concentration buried region.

Claim 7

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having at least a first and a second recess; first and second high concentration buried regions of a second conductivity type formed on surfaces of said first and second recesses formed in said semiconductor substrate of the first conductivity type; first and second element regions of the second conductivity type respectively formed in said first and second recesses formed in said semiconductor substrate and having an impurity concentration lower than that of said first and second high concentration buried regions; a complementary MOS transistor in which an N-channel MOS transistor and a P-channel MOS transistor are respectively formed in a first well diffusion layer of the first conductivity type and a second well diffusion layer of the second conductivity type formed in said first element region of the second conductivity type, said second well diffusion layer having an impurity concentration higher than that of said first element region; and a double-diffused MOS transistor including a well diffusion layer of the first conductivity type formed is said second element region of the second conductivity type, a back gate region of the first conductivity type formed so as to be self-aligned with the gate electrode using said electrode as a blocking mask, and wherein the drain region includes said second high concentration buried region.

Claim 8

A device according to claim 5, wherein conductivity types of the respective gate electrodes of said N-channel, P-channel, and double-diffused MOS transistors are different from those of the respective well diffusion layers.

Claim 9

A device according to claim 5, wherein the respective gate electrodes of said N-channel, P-channel, and double-diffused MOS transistors are formed of a polycrystalline silicon layer.

Claim 10

A device according to claim 5, wherein said double-diffused MOS transistor is of a vertical type.