EP0158292A2
Expired / Lapsed
EP
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Semiconductor device having a drive circuit element and an output transistor
Assignee: Toshiba Corp
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Filing: 1985-04-04
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Granted: —
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Expires: 2005-04-04
Abstract
Abstract There is a semiconductor device in which an n-type layer (12) formed on a p'-type substrate (10) is divided into first and second device forming regions (12-1, 12-2) by an isolation region (16) and drive circuit devices (TR2, TR3) and an output circuit device are respectively formed in these first and second device forming regions (12-1, 12-2). The output circuit device (TR1) is a conductivity modulated MOS transistor having the p + -type substrate (10) as a drain and the second device forming region (12-2) as a high resistance region whose conductivity is modulated.
Inventors
- 👤 Yu C/O Patent Division Ohata
- 👤 Tsuyoshi C/O Patent Division Kuramoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 11:42
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W15/00; H10W15/01; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
180 words
A semiconductor device comprising a semiconductor substrate of one conductivity type (10), a semiconductor layer of an opposite conductivity type (12) formed on said semiconductor substrate (10), an isolation region (16, 16-1) to divide said semiconductor layer (12) into first and second device forming regions (12-1, 12-2), a drive circuit device (TR2, TR3) formed in said first device forming region (12-1), and an output circuit device (TR1) formed in said second device forming region (12-2), characterized in that said output circuit device (TRI) is a conductivity modulated MOS transistor comprising: at least one first semiconductor region of one"conductivity type (24-1, 24-2) formed in the surface area of said second device forming region (12-2); a second semiconductor region of the opposite conductivity type (30-1, 30-2) formed in said first semiconductor region (24-1, 24-2); a gate electrode (22) formed through an insulation layer on at least a portion of said first semiconductor region (24-1, 24-2) which lies between said second device forming region (12-2) and said second semiconductor region (30-1, 30-2); said second device forming region (12-2); and said semiconductor substrate (10).
Claim 2
Dependent Claim
180 words
A semiconductor device comprising a semiconductor substrate of one conductivity type (10), a semiconductor layer of an opposite conductivity type (12) formed on said semiconductor substrate (10), an isolation region (16, 16-1) to divide said semiconductor layer (12) into first and second device forming regions (12-1, 12-2), a drive circuit device (TR2, TR3) formed in said first device forming region (12-1), and an output circuit device (TR1) formed in said second device forming region (12-2), characterized in that said output circuit device (TRI) is a conductivity modulated MOS transistor comprising: at least one first semiconductor region of one"conductivity type (24-1, 24-2) formed in the surface area of said second device forming region (12-2); a second semiconductor region of the opposite conductivity type (30-1, 30-2) formed in said first semiconductor region (24-1, 24-2); a gate electrode (22) formed through an insulation layer on at least a portion of said first semiconductor region (24-1, 24-2) which lies between said second device forming region (12-2) and said second semiconductor region (30-1, 30-2); said second device forming region (12-2); and said semiconductor substrate (10).
Claim 3
Dependent Claim
39 words
A semiconductor device according to claim 1, characterized in that said isolation region is a semiconductor region of one conductivity type (16) formed so as to reach said semiconductor substrate (10) from the surface of said semiconductor layer (12).
Claim 4
Dependent Claim
35 words
A semiconductor device according to claim 1, characterized in that said isolation region is an insulation region (16-1) formed so as to reach said semiconductor substrate (10) from the surface of said semiconductor layer (12).
Claim 5
Dependent Claim
62 words
A semiconductor device according to claim 1, 2 or 3 characterized in that said conductivity modulated M OS transistor (TR1) further has a semiconductor region of the opposite conductivity type (46) which is formed between said second device forming region (12-2) and said semiconductor substrate (10) and which has an impurity concentration higher than that of said second device forming region (12-2).
Claim 6
Dependent Claim
61 words
A semiconductor device according to any one of claims 1 to 4, characterized in that said drive circuit device has a MOS transistor of one-channel type (TR3) formed in said first device forming region (12-1) and a MOS transistor of an opposite-channel type (TR2) formed in the semiconductor region of one conductivity type formed in said first device forming region (12-1).
References Cited (Backward Citations)
No citation records indexed.
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