US4626882A
Expired / Lapsed
US
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Twin diode overvoltage protection structure
Assignee: International Business Machines Corp
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Filing: 1984-07-18
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Granted: 1986-12-02
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Expires: 2004-07-18
Abstract
Abstract Disclosed is an overvoltage protection structure which when used with CMOS circuits it protects them from overvoltage conditions while minimizing latch-up conditions in the structure. It consists of a well region of an opposite conductivity to that of the substrate defining a pocket region having a conductivity type which is similar to that of the substrate. A first PN junction diode is formed in a portion of the well region and a second PN junction diode is formed in the pocket region. The two diodes have opposite polarity and they both are connected to a signal line in such a way that one of the two diodes will be forward biased if the voltage on the signal line exceeds the bounds of the power supply voltages. The pocket region is connected to a V SS terminal which is normally grounded and the well region is connected to a power supply V DD . The doping concentration in the well region is predetermined to have a gradient so that minority carriers injected from one of the diodes in the well region will be repulsed and prevented from moving into the substrate region where they would be majority carriers and they could cause latch-up in the structure or at the very least adversely affect the voltage level of the substrate. Instead the injected carriers recombine in the well region or are collected by the adjacent isolated pocket region. When the second diode is forward biased, the minority carriers are injected into the isolated pocket region and are prevented from reaching the substrate by the underlying well region. This prevents these carriers from affecting the operation of adjacent circuits.
Inventors
- 👤 Peter E. Cottrell
- 👤 William J. Craig
- 👤 Ronald R. Troutman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:11
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/857; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
142 words
An overvoltage protection structure connected to a signal line of a semiconductor structure comprising: a semiconductor body of a first conductivity type; a first region of a second conductivity type formed in a predetermined portion of said body; a second region of said first conductivity type formed totally within said first region and separated from said body by a portion of said first region; a first diode forming region of said first conductivity type formed in said first region; a second diode forming region of said second conductivity type formed in said second region; means for applying a first power supply voltage at a first potential to said first region; means for applying a second power supply voltage at a second potential to said second region; and means for connecting said signal line to said first and said second diode forming regions.
Claim 2
Dependent Claim
142 words
An overvoltage protection structure connected to a signal line of a semiconductor structure comprising: a semiconductor body of a first conductivity type; a first region of a second conductivity type formed in a predetermined portion of said body; a second region of said first conductivity type formed totally within said first region and separated from said body by a portion of said first region; a first diode forming region of said first conductivity type formed in said first region; a second diode forming region of said second conductivity type formed in said second region; means for applying a first power supply voltage at a first potential to said first region; means for applying a second power supply voltage at a second potential to said second region; and means for connecting said signal line to said first and said second diode forming regions.
Claim 3
Dependent Claim
49 words
An overvoltage protection structure as set forth in claim 1 wherein said first region comprises a first portion which has a first concentration of conductivity determining impurities and a second portion which has a second concentration of conductivity determining impurities, said second concentration being greater than said first concentration.
Claim 4
Dependent Claim
93 words
An overvoltage protection structure as set forth in claim 2 wherein: said means for applying a first potential to said first region comprises a first contact region in said first region, first ohmic contact means on said contact region and a first power supply coupled to said first ohmic contact means; and said means for applying a second potential to said second region comprises a second contact region in said second region, second ohmic contact means on said second contact region and a second power supply coupled to said second ohmic contact means.
Claim 5
Dependent Claim
33 words
An overvoltage protection structure as set forth in claim 2 wherein: said first conductivity type semiconductor body is a first conductivity epitaxial layer formed on a semiconductor substrate of a first conductivity type.
Claim 6
Dependent Claim
23 words
An overvoltage protection structure as set forth in claim 2 wherein said second portion of said first region is adjacent said semiconductor substrate.
Claim 7
Dependent Claim
184 words
An overvoltage protection structure connected to a signal line of a semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first well region of a second conductivity type formed in a predetermined portion of said substrate; a second well region of a second conductivity type formed in a predetermined portion of said substrate and extending into said first well region wherein the doping concentration and said second well region is lower than that of said first well region; an isolated region of a first conductivity type surrounded by said second well region wherein said isolated region is isolated from the remaining portion of said substrate by said first well region; a first diode forming region of a second conductivity type formed within said isolated region; a second diode forming region of a first conductivity type formed with said second well region; means for connecting said second well region to a low bias voltage means; means for connecting said isolated region to a high bias voltage means; means for connecting said signal line to said first and said second diode forming regions.
Claim 8
Dependent Claim
184 words
An overvoltage protection structure connected to a signal line of a semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first well region of a second conductivity type formed in a predetermined portion of said substrate; a second well region of a second conductivity type formed in a predetermined portion of said substrate and extending into said first well region wherein the doping concentration and said second well region is lower than that of said first well region; an isolated region of a first conductivity type surrounded by said second well region wherein said isolated region is isolated from the remaining portion of said substrate by said first well region; a first diode forming region of a second conductivity type formed within said isolated region; a second diode forming region of a first conductivity type formed with said second well region; means for connecting said second well region to a low bias voltage means; means for connecting said isolated region to a high bias voltage means; means for connecting said signal line to said first and said second diode forming regions.
Claim 9
Dependent Claim
308 words
A semiconductor structure comprising: a semiconductor body of a first conductivity type; a first well region of a second conductivity type formed in a portion of said body and having in it a second conductivity type dopant of a predetermined concentration; a second well region of a second conductivity type formed in a portion of said body within said first well region wherein the second conductivity type dopant concentration in said second well region is lower than that of said first well region; an isolated region having a first type of conductivity formed within said second well region, said isolated region being isolated from remaining portions of said body by said second well region; a second conductivity type region formed within said isolated region so that it forms a first PN junction diode; a first conductivity type region formed within said second well region so as to form a second PN junction diode; means for connecting said second conductivity type portion of said first PN junction diode and said second conductivity portion of said second PN junction diode to a signal line to receive a varying voltage signal; means for applying a high bias potential on said second well region, said second PN junction diode being placed into a conductive state when said varying voltage signal rises above said high bias potential, said first conductivity type region generating minority carriers that are prevented from penetrating into said body by said first well region and said second well region; and means for applying a low bias potential on said isolated region, said first PN junction diode being placed into a conductive state when said varying voltage signal falls below said low bias potential, said second conductivity type region generating minority carriers that are prevent from penetrating into said body by said first well region and said second well region.
Claim 10
Dependent Claim
308 words
A semiconductor structure comprising: a semiconductor body of a first conductivity type; a first well region of a second conductivity type formed in a portion of said body and having in it a second conductivity type dopant of a predetermined concentration; a second well region of a second conductivity type formed in a portion of said body within said first well region wherein the second conductivity type dopant concentration in said second well region is lower than that of said first well region; an isolated region having a first type of conductivity formed within said second well region, said isolated region being isolated from remaining portions of said body by said second well region; a second conductivity type region formed within said isolated region so that it forms a first PN junction diode; a first conductivity type region formed within said second well region so as to form a second PN junction diode; means for connecting said second conductivity type portion of said first PN junction diode and said second conductivity portion of said second PN junction diode to a signal line to receive a varying voltage signal; means for applying a high bias potential on said second well region, said second PN junction diode being placed into a conductive state when said varying voltage signal rises above said high bias potential, said first conductivity type region generating minority carriers that are prevented from penetrating into said body by said first well region and said second well region; and means for applying a low bias potential on said isolated region, said first PN junction diode being placed into a conductive state when said varying voltage signal falls below said low bias potential, said second conductivity type region generating minority carriers that are prevent from penetrating into said body by said first well region and said second well region.
Claim 11
Dependent Claim
134 words
A semiconductor structure as set forth in claim 7 wherein: said semiconductor body is a P type semiconductor substrate; said first well region is a first N-well region. said second well region is a second N-well formed within said first N-well wherein the concentration of the N-type dopants in said first well region is greater than that of said second well region; said isolated region is a P type region formed in said second N-well region; said second conductivity type region in said isolated region is an N-type region formed in the P-type isolated region so as to form a first PN junction diode; and said first conductivity type region in said second well region is a P-type region formed in the second N-well region so as to form a second PN junction diode.
Claim 12
Dependent Claim
31 words
A semiconductor structure as set forth in claim 8 wherein: said first bias potential is set at a predetermined positive supply potential; and said first bias potential is the ground potential.
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