US3712995A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Input transient protection for complementary insulated gate field effect transistor integrated circuit device
Assignee: RCA Corp
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Filing: 1972-03-27
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Granted: 1973-01-23
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Expires: 1992-03-27
Abstract
Abstract A COS/MOS INTERGRATED CIRCUIT DERIVE OF THE TYPE HAVING A DIFFUSED WELL REGION AND COMPLEMENTARY INSULATED GATE FIELD EFFECT TRANSISTORS INSIDE AND OUTSIDE THE WELL REGIONS, RESPECTIVELY, HAS AN INTEGRAL CIRCUIT FOR PROTECTING THE GATE INSULATORS OF THE INSULATED GATE FIELD EFFECT TRANSISTORS FROM DESTRUCTIVE TRANSIENTS. THE PROTECTION CIRCUIT INCLUDES A DIFFUSED RESISTOR MADE AT THE SAME TIME AS THE SOURCE AND DRAIN REGIONS OF THE TRANSISTOR WHICH IS WITHIN THE WELL REGION. THE DIFFUSED RESISTOR IS DISPOSED WITHIN A REGION MADE AT THE SAME TIME AS THE WELL REGION.
Inventors
- 👤 G Steudel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:46
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-23 | 1976-07-24 | 1977-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-23 | 1980-07-24 | 1981-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-23 | 1984-07-24 | 1985-01-23 | $7700.00 | Window Closed / Lapsed |