Patent US2194385A successfully refreshed from Google Patents.
US4874718A
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Method for forming SOI film
Assignee: Mitsubishi Electric Corp
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Filing: 1988-07-28
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Granted: 1989-10-17
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Expires: 2008-07-28
Abstract
Abstract According to the present invention, an SOI film of a monocrystalline silicon film is formed by making solid phase epitaxial growth of an amorphous silicon layer formed on an oxide film. A through hole portion formed in the oxide film is formed in such a shape that an epitaxial growth region growing with the through hole portion as a nucleus covers the entire region of the amorphous silicon layer. After the SOI film is formed, oxygen ions are ioin-implanted into the through hole portion in the oxide film, to be embedded by an oxide film layer by thermal processing.
Inventors
- 👤 Yasuo Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/086
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
115 words
An SOI film forming method for forming by solid phase epitaxial growth an SOI film formed of a monocrystalline silicon film isolated from a monocrystalline silicon layer through an oxide film on said monocrystalline silicon layer, comprising the steps of: forming an oxide film having a through hole portion on said monocrystalline silicon layer, forming an amorphous layer on the surface of said oxide film and inside said through hole portion, forming the monocrystalline silicon film by epitaxially growing said amorphous layer with a surface region of said monocrystalline silicon layer positioned in said through hole portion as a nucleus, and forming an oxide layer in said through hole portion provided in said oxide film.
Claim 2
Dependent Claim
115 words
An SOI film forming method for forming by solid phase epitaxial growth an SOI film formed of a monocrystalline silicon film isolated from a monocrystalline silicon layer through an oxide film on said monocrystalline silicon layer, comprising the steps of: forming an oxide film having a through hole portion on said monocrystalline silicon layer, forming an amorphous layer on the surface of said oxide film and inside said through hole portion, forming the monocrystalline silicon film by epitaxially growing said amorphous layer with a surface region of said monocrystalline silicon layer positioned in said through hole portion as a nucleus, and forming an oxide layer in said through hole portion provided in said oxide film.
Claim 3
Dependent Claim
72 words
The method according to claim 1, wherein the step of forming an oxide layer in said through hole portion comprises the steps of ion-implanting oxygen ions into a region with a depth at which said oxide film under the surface of said monocrystalline silicon film is positioned, and forming an oxide layer in the through hole portion provided in said oxide film by heat-treating the region having the oxygen ions implanted thereinto.
Claim 4
Dependent Claim
44 words
The method according to claim 2, which further comprises the step of depositing a protective film for ion implantation on the surface of said monocrystalline silicon film between the step of forming said monocrystalline silicon film and the step of ion-implanting said oxygen ions.
Claim 5
Dependent Claim
58 words
The method according to claim 2, wherein the step of ion-implanting said oxygen ions comprises the steps of forming on the surface of said monocrystalline silicon film a resist film having an opening only in a region of said through hole portion in said oxide film, and ion-implanting the oxygen ions utilizing the resist film as a mask.
Claim 6
Dependent Claim
109 words
The method according to claim 3, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion provided in said oxide film comprises a plurality of through hole portions formed independently of each other, said plurality of through hole portions being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in each of the through hole portions toward a plane region of said amorphous layer overlap with each other.
Claim 7
Dependent Claim
109 words
The method according to claim 4, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion provided in said oxide film comprises a plurality of through hole portions formed independently of each other, said plurality of through hole portions being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in each of the through hole portions toward a plane region of said amorphous layer overlap with each other.
Claim 8
Dependent Claim
40 words
The method according to claim 5, wherein said plurality of through hole portions comprise at least one through hole portion formed in a region accounting for the area of 100 μm 2 of a surface region of said amorphous layer.
Claim 9
Dependent Claim
40 words
The method according to claim 6, wherein said plurality of through hole portions comprise at least one through hole portion formed in a region accounting for the area of 100 μm 2 of a surface region of said amorphous layer.
Claim 10
Dependent Claim
99 words
The method according to claim 3, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion is formed in a continuous pattern shape, the pattern shape of said through hole portion being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in the through hole portion toward a plane region of said amorphous layer overlap with each other.
Claim 11
Dependent Claim
98 words
The method according to claim 4, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion is formed in a continuous pattern shape, the pattern shape of said through hole portion being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in the through portion toward a plane region of said amorphous layer overlap with each other.
Claim 12
Dependent Claim
109 words
The method according to claim 1, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion provided in said oxide film comprises a plurality of through hole portions formed independently of each other, said plurality of through hole portions being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in each of the through hole portions toward a plane region of said amorphous layer overlap with each other.
Claim 13
Dependent Claim
99 words
The method according to claim 1, wherein the step of forming said oxide film provided with said through hole portion comprises the steps of forming said oxide film on said monocrystalline silicon layer and forming said through hole portion by patterning said oxide film, and said through hole portion is formed in a continuous pattern shape, the pattern shape of said through hole portion being formed in such a positional relation that epitaxial growth regions each growing from said amorphous layer deposited in the through hole portion toward a plane region of said amorphous layer overlap with each other.
References Cited (Backward Citations)
US4437225A
Cited
US4479297A
Cited
US4463492A
Cited
US4559102A
Cited
US4592799A
Cited
US4775641A
Cited
US4749660A
Cited
US4786608A
Cited
US4760036A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-16 | 1993-04-17 | 1993-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-16 | 1997-04-17 | 1997-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-16 | 2001-04-17 | 2001-10-17 | $7700.00 | Window Closed / Lapsed |