Patent US4395636A successfully refreshed from Google Patents.
Patent US4873163A successfully refreshed from Google Patents.
US4873163A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photomask material
Assignee: Mitsubishi Electric Corp
•
Filing: 1988-08-08
•
Granted: 1989-10-10
•
Expires: 2008-08-08
Abstract
Abstract A photomask material according to the present invention comprises a transparent substrate and a silicide film of a transition metal formed on the transparent substrate.
Inventors
- 👤 Yaichiro Watakabe
- 👤 Hiroaki Morimoto
- 👤 Tatsuo Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:14
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/38; G03F1/46; G03F1/54
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
57 words
A photomask material blank for manufacturing a semiconductor device, said photomask material comprising: a mask blank in the form of a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate and formed by one of sputtering, ionized cluster beam and CVD.
Claim 2
Dependent Claim
57 words
A photomask material blank for manufacturing a semiconductor device, said photomask material comprising: a mask blank in the form of a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate and formed by one of sputtering, ionized cluster beam and CVD.
Claim 3
Dependent Claim
20 words
A photomask material in accordance with claim 1, wherein said silicide film is about 500 to 1000 Å in thickness.
Claim 4
Dependent Claim
17 words
A photomask material in accordance with claim 1, wherein said transparent substrate is made of silica glass.
Claim 5
Dependent Claim
22 words
The photomask material of claim 1, wherein said silicide film is a sputtered layer and thereby has a substantially flat film surface.
Claim 6
Dependent Claim
83 words
A photomask blank material for manufacturing a semiconductor device, said photomask material comprising: a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate, wherein said silicide film is about 200 Å in thickness, and a polysilicon film of about 1000 Å in thickness is formed between said silicide film and said transparent substrate said silicide film being formed by one of sputtering, ionized cluster beam and CVD.
Claim 7
Dependent Claim
83 words
A photomask blank material for manufacturing a semiconductor device, said photomask material comprising: a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate, wherein said silicide film is about 200 Å in thickness, and a polysilicon film of about 1000 Å in thickness is formed between said silicide film and said transparent substrate said silicide film being formed by one of sputtering, ionized cluster beam and CVD.
Claim 8
Dependent Claim
87 words
A photomask blank material for manufacturing a semiconductor device, said photomask material comprising: a mask blank in the form of a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate, wherein a low reflective film is formed on said silicide film and wherein said low reflective film is prepared by an oxide of said same transition metal, said silicide film being formed by one of sputtering, ionized cluster beam and CVD.
Claim 9
Dependent Claim
87 words
A photomask blank material for manufacturing a semiconductor device, said photomask material comprising: a mask blank in the form of a transparent substrate; and a silicide film of a transition metal selected from the group consisting of molybdenum, tantalum and tungsten formed on said transparent substrate, wherein a low reflective film is formed on said silicide film and wherein said low reflective film is prepared by an oxide of said same transition metal, said silicide film being formed by one of sputtering, ionized cluster beam and CVD.
Claim 10
Dependent Claim
21 words
A photomask material in accordance with claim 6, wherein said oxide is molybdenum oxide, tungsten oxide, titanium oxide or chromium oxide.
Claim 11
Dependent Claim
18 words
The photomask material of claim 7, wherein the thickness of said low reflective film is about 100-200 Å.
Claim 12
Independent Claim
85 words
A method of manufacturing a photomask material comprising the steps of preparing a mask blank in the form of a transparent substrate, forming an unpatterned silicide film on said substrate by one of sputtering, ionized cluster beam and CVD, said silicide film being a transition metal selected from the group consisting of molybdenum, tantalum and tungsten and having a thickness of about 200 to 1000 Å, forming a micropattern by dry etching said silicide film and cleaning said photomask material by ultrasonic methods or scrubbing.
Claim 13
Independent Claim
85 words
A method of manufacturing a photomask material comprising the steps of preparing a mask blank in the form of a transparent substrate, forming an unpatterned silicide film on said substrate by one of sputtering, ionized cluster beam and CVD, said silicide film being a transition metal selected from the group consisting of molybdenum, tantalum and tungsten and having a thickness of about 200 to 1000 Å, forming a micropattern by dry etching said silicide film and cleaning said photomask material by ultrasonic methods or scrubbing.
Claim 14
Dependent Claim
39 words
The method of claim 9, wherein said silicide film is about 200 Å in thickness, and including the further step of forming a polysilicon film of about 1000 Å in thickness between said silicide film and said transparent substrate.
Claim 15
Dependent Claim
33 words
The method of claim 9, comprising the further step of forming a low reflective film on said silicide film, said silicide film and said low reflective film being formed in the same vessel.
References Cited (Backward Citations)
US3721584A
Cited
US4113486A
Cited
US4284713A
Cited
US4188444A
Cited
US4368230A
Cited
US4237150A
Cited
US4393127A
Cited
US4440841A
Cited
US4472237A
Cited
US4722878A
Cited
US4661426A
Cited
US4717625A
Cited
US4783371A
Cited
US4792461A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-09 | 1993-04-10 | 1993-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-09 | 1997-04-10 | 1997-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-09 | 2001-04-10 | 2001-10-10 | $7700.00 | Window Closed / Lapsed |