US4868838A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
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Filing: 1987-10-07
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Granted: 1989-09-19
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Expires: 2007-10-07
Abstract
Abstract A semiconductor laser device with a stripe-channeled substrate and an active layer for laser oscillation disposed over the substrate comprising an optical waveguide; a striped mesa that is formed by the removal of the portions corresponding to the outside of said optical waveguide; and a multi-layered crystal that is grown into said removed portions, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction, and a method for the production thereof comprising epitaxially growing a multi-layered crystal containing the active layer on a grown crystal that includes the stripe-channeled substrate; forming a striped mesa on the portion corresponding to said striped channel by the removal of the portions at both sides of said striped channel; and epitaxially growing a multi-layered crystal outside of said striped mesa, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction.
Inventors
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:17
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/1053; H01S5/1064; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
128 words
In a semiconductor laser device with a stripe-channeled substrate, an active layer for laser oscillation, and first and second cladding layers sandwiching said active layer therebetween on the substrate, said laser device comprising: an optical waveguide that is formed within the active layer based on a decrease in the effective refractive index due to the striped channel of the substrate, the outside of said channel absorbing a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions corresponding to the outside of said optical waveguide; and a multi-layered crystal that is grown into said removed portions, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp - n-, or pn - n- reverse bias junction.
Claim 2
Dependent Claim
128 words
In a semiconductor laser device with a stripe-channeled substrate, an active layer for laser oscillation, and first and second cladding layers sandwiching said active layer therebetween on the substrate, said laser device comprising: an optical waveguide that is formed within the active layer based on a decrease in the effective refractive index due to the striped channel of the substrate, the outside of said channel absorbing a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions corresponding to the outside of said optical waveguide; and a multi-layered crystal that is grown into said removed portions, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp - n-, or pn - n- reverse bias junction.
Claim 3
Dependent Claim
35 words
A semiconductor laser device according to claim 1, wherein said multi-layered crystal is composed of a current blocking layer disposed on the substrate and a plurality of burying layers disposed on said current blocking layer.
Claim 4
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein said multi-layered crystal is composed of a plurality of burying layers disposed on the substrate.
Claim 5
Dependent Claim
37 words
A semiconductor laser device according to claim 1, wherein the burying layer that comes into contact with the active layer on the side walls of said striped mesa has a high resistance of 0.1 Ω·cm or more.
Claim 6
Dependent Claim
37 words
A semiconductor laser device according to claim 1, wherein all of the burying layers have a high resistance of 0.1 Ω·cm or more and constitute a pin-, pp - n- or pn - n- reverse bias junction.
Claim 7
Dependent Claim
50 words
A semiconductor laser device according to claim 4, wherein an undoped or Ge doped Ga 1-z Al z As layer having an Al composition ratio z of 0.5-1 is used as said burying layer that comes into contact with the active layer on the side walls of said striped mesa.
Claim 8
Dependent Claim
32 words
A semiconductor laser device according to claim 1, wherein the width of the active layer within the striped mesa is uniform from one facet to the other facet of said laser device.
Claim 9
Dependent Claim
55 words
A semiconductor laser device according to claim 1, wherein the width of the active layer within the striped mesa is greater than that of the striped channel in the vicinity of the facets of said laser device and is nearly equal to that of the striped channel inside of both facets of said laser device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |