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EP0209372A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A semiconductor laser device

Assignee: Sharp Corp
•
Filing: 1986-07-16
•
Granted: —
•
Expires: 2006-07-16
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Abstract

Abstract A semiconductor laser device comprising a multi-layered crystal structure containing an active layer (3) for laser oscillation on a V-stripe channeled substrate (1), wherein regions (100) by means of which carrier within said active layer (3) is prevented from diffusing outside of said active layer are disposed facing each other with an optical waveguide (W) therebetween which is formed by the absorption of light by the shoulder portions of the striped channel (7). The distance between the regions (100) is narrower (W1) than the width (W) of said optical waveguide in the vicinity of both facets and wider (W2) than the the width of said optical waveguide inside of both facets.

Inventors

  • 👤 Saburo Yamamoto
  • 👤 Taiji Morimoto
  • 👤 Nobuyuki Miyauchi
  • 👤 Shigeki Maei

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 10:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/1053; H01S5/1064; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277; H01S5/24

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 117 words
A semiconductor laser device comprising a multi-layered crystal structure containing an active layer (3) for laser oscillation on a V-stripe channeled substrate (1), characterised in that regions (100) by means of which carrier within said active layer (3) is prevented from diffusing outside of said active layer are disposed facing each other with an optical waveguide (W) therebetween which is formed by the absorption of light by the shoulder portions of the striped channel (7), the distance between said regions (100) being narrower (W 1 ) than the width of said optical waveguide (W) in the vicinity of both facets and wider (W 2 ) than the width of said optical waveguide (M) inside of both facets.
Claim 2
Dependent Claim 117 words
A semiconductor laser device comprising a multi-layered crystal structure containing an active layer (3) for laser oscillation on a V-stripe channeled substrate (1), characterised in that regions (100) by means of which carrier within said active layer (3) is prevented from diffusing outside of said active layer are disposed facing each other with an optical waveguide (W) therebetween which is formed by the absorption of light by the shoulder portions of the striped channel (7), the distance between said regions (100) being narrower (W 1 ) than the width of said optical waveguide (W) in the vicinity of both facets and wider (W 2 ) than the width of said optical waveguide (M) inside of both facets.
Claim 3
Dependent Claim 39 words
A semiconductor laser device as claimed in claim 1, wherein said regions (100) for preventing carrier from diffusing outside of said active layer are composed of burying layers (8) having a greater energy gap than said active layer (3).

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