Patent NL6709291A successfully refreshed from Google Patents.
US4864162A
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Voltage variable FET resistor with chosen resistance-voltage relationship
Assignee: Grumman Corp
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Filing: 1988-05-10
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Granted: 1989-09-05
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Expires: 2008-05-10
Abstract
Abstract A voltage variable FET resistor includes a FET network comprising a plurality of FET segments each of which have a predetermined gate width and a voltage divider network including a plurality of fixed resistors coupled to the gates of the plurality of FET segments for providing a different gate width of each of the FET segments and the resistance of each of the fixed resistors is chosen to provide a predetermined relationship between the control voltage and the channel resistance of the voltage variable FET resistor.
Inventors
- 👤 Barak Maoz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:10
CPC Classifications
H; H03; H03H; H03H11/00; H03H11/02; H03H11/24; H03H11/245
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
115 words
A voltage variable FET resistor comprising: a FET network comprising a plurality of FET segments having source, drain and gate electrodes, the drain electrode of each of the plurality of FET segments being coupled to an output terminal, the source electrode of each of the plurality of FET segments being coupled to an input terminal and the gate electrodes of each of the plurality of FET segments being coupled to a control voltage terminal, each of said plurality of FET segments having a predetermined gate width; and a voltage divider network coupled to said gate electrodes of said plurality of FET segments for providing a different predetermined gate voltage to each of said gate electrodes.
Claim 2
Dependent Claim
115 words
A voltage variable FET resistor comprising: a FET network comprising a plurality of FET segments having source, drain and gate electrodes, the drain electrode of each of the plurality of FET segments being coupled to an output terminal, the source electrode of each of the plurality of FET segments being coupled to an input terminal and the gate electrodes of each of the plurality of FET segments being coupled to a control voltage terminal, each of said plurality of FET segments having a predetermined gate width; and a voltage divider network coupled to said gate electrodes of said plurality of FET segments for providing a different predetermined gate voltage to each of said gate electrodes.
Claim 3
Dependent Claim
39 words
The voltage variable FET resistor of claim 1 wherein the gate width of at least one of the plurality of FET segments is different from the gate width of at least one other of said plurality of FET segments.
Claim 4
Dependent Claim
36 words
The voltage variable FET resistor of claim 2 wherein said voltage divider network includes a plurality of fixed resistors, at least one of said plurality of fixed resistors being coupled to each of the gate electrodes.
Claim 5
Dependent Claim
72 words
The voltage variable FET resistor of claim 3 wherein said plurality of FET segments includes n FET segments, wherein n≧2, said plurality fixed resistors includes n resistors and wherein the n th -1 resistor is connected between the gate electrode of the n th -1 and the n th FET segment and the n th resistor is connected between the gate electrode of the n th FET segment and a ground terminal.
Claim 6
Dependent Claim
59 words
The voltage variable FET resistor of claim 4 wherein each of the n FET segments have a drain electrode to source electrode channel resistance variable as a function of a voltage applied to the gate electrode of each of the n FET segments and as a function of the predetermined gate width of each of the n FET segments.
Claim 7
Dependent Claim
55 words
The voltage variable FET resistor of claim 5 wherein the gate width of each of the n FET segments and the resistance of each of the n resistors is chosen to provide a predetermined relationship between the control voltage applied to said control voltage terminal and the resistance measured between the input and output terminals.
Claim 8
Dependent Claim
30 words
The voltage variable FET resistor of claim 6 wherein said FET network and said voltage divider network are implemented in a monolithic integrated circuit formed on a monolithic semiconductor substrate.
Claim 9
Dependent Claim
19 words
The voltage variable FET resistor of claim 7 wherein said monolithic semiconductor substrate comprises one of GaAs and Si.
Claim 10
Dependent Claim
171 words
A monolithic voltage variable FET resistor having a predetermined resistance-voltage relationship, said FET resistor comprising: a FET network comprising a plurality of FET segments having source, drain and gate electrodes, the drain electrode of each of the plurality of FET segments being coupled to an output terminal, the source electrode of each of the plurality of FET segments being coupled to an input terminal and the gate electrode of each of the plurality of FET segments being coupled to a control voltage terminal, each of said plurality of FET segments having a predetermined gate width; and a voltage divider network coupled to said gate electrodes of said plurality of FET segments for providing a different predetermined gate voltage to each gate electrode; whereby the relationship between the resistance measured between the output and input terminals and a control voltage applied to the control voltage terminal is predetermined by varying the gate widths of said plurality of FET segments and the gate voltages provided to each of said plurality of FET segments.
Claim 11
Dependent Claim
171 words
A monolithic voltage variable FET resistor having a predetermined resistance-voltage relationship, said FET resistor comprising: a FET network comprising a plurality of FET segments having source, drain and gate electrodes, the drain electrode of each of the plurality of FET segments being coupled to an output terminal, the source electrode of each of the plurality of FET segments being coupled to an input terminal and the gate electrode of each of the plurality of FET segments being coupled to a control voltage terminal, each of said plurality of FET segments having a predetermined gate width; and a voltage divider network coupled to said gate electrodes of said plurality of FET segments for providing a different predetermined gate voltage to each gate electrode; whereby the relationship between the resistance measured between the output and input terminals and a control voltage applied to the control voltage terminal is predetermined by varying the gate widths of said plurality of FET segments and the gate voltages provided to each of said plurality of FET segments.
Claim 12
Dependent Claim
39 words
The voltage variable FET resistor of claim 9 wherein the gate width of at least one of the plurality of FET segments is different from the gate width of at least one other of said plurality of FET segments.
Claim 13
Dependent Claim
42 words
The voltage variable FET resistor of claim 10 wherein said voltage divider network includes a plurality of fixed resistors, at least one of said plurality of fixed resistors being coupled to each of the gate electrodes of said plurality of FET segments.
Claim 14
Dependent Claim
72 words
The voltage variable FET resistor of claim 11 wherein said plurality of FET segments includes n FET segments, wherein n≧2, said plurality fixed resistors includes n resistors and wherein the n th -1 resistor is connected between the gate electrode of the n th -1 and the n th FET segment and the n th resistor is connected between the gate electrode of the n th FET segment and a ground terminal.
Claim 15
Dependent Claim
59 words
The voltage variable FET resistor of claim 12 wherein each of the n FET segments having a drain electrode to source electrode channel resistance variable as a function of a voltage applied to the gate electrode of each of the n FET segment and as a function of the predetermined gate width of each of the n FET segments.
Claim 16
Dependent Claim
30 words
The voltage variable FET resistor of claim 13 wherein said FET network and said voltage divider network are implemented in a monolithic integrated circuit formed on a monolithic semiconductor substrate.
Claim 17
Dependent Claim
19 words
The voltage variable FET resistor of claim 14 wherein said monolithic semiconductor substrate comprises one of GaAs and Si.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |