Patent US4862471A successfully refreshed from Google Patents.
US4862471A
Expired / Lapsed
US
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Semiconductor light emitting device
Assignee: Research Corp Technologies Inc
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Filing: 1988-04-22
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Granted: 1989-08-29
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Expires: 2008-04-22
Abstract
Abstract A semiconductor, injection mode light emitting device includes a body of a semiconductor material having a quantum mode region formed of alternating layers of gallium nitride and either indium nitride or aluminum nitride. A region of N-type gallium nitride is on one side of the quantum well region and is adapted to inject electrons into the quantum mode region. A region of P-type gallium phosphide is on the other side of the quantum well region and is adapted to inject holes into the quantum mode region. A barrier region of insulating gallium nitride is between the P-type region and the quantum well region and serves to block the flow of electrons from the quantum well region into the P-type region. Conductive contacts are provided on the N-type region and the P-type region.
Inventors
- 👤 Jacques I. Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:46
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H10H20/811; H10H20/812; H01S5/34333
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
154 words
An injection mode light emitting device comprising: a body of a semiconductor material having; a quantum well region having opposed sides and adapted to receive both injected electrons and holes and which emits light upon the recombination of the holes and electrons; a layer of N-type gallium nitride over one side of the quantum well region and adapted to inject electrons into the quantum well region; a layer of narrower band gap P-type semiconductor material over the other side of the quantum well region and adapted to inject holes into the quantum well region; a barrier layer between the P-type layer and the quantum well region for blocking the flow of electrons from the quantum well region into the P-type layer so that recombination of the electrons and holes and the generation of light takes place in the quantum well region; and conducting contacts on each of the N-type layer and the P-type layer.
Claim 2
Dependent Claim
154 words
An injection mode light emitting device comprising: a body of a semiconductor material having; a quantum well region having opposed sides and adapted to receive both injected electrons and holes and which emits light upon the recombination of the holes and electrons; a layer of N-type gallium nitride over one side of the quantum well region and adapted to inject electrons into the quantum well region; a layer of narrower band gap P-type semiconductor material over the other side of the quantum well region and adapted to inject holes into the quantum well region; a barrier layer between the P-type layer and the quantum well region for blocking the flow of electrons from the quantum well region into the P-type layer so that recombination of the electrons and holes and the generation of light takes place in the quantum well region; and conducting contacts on each of the N-type layer and the P-type layer.
Claim 3
Dependent Claim
37 words
A light emitting device in accordance with claim 1 in which the quantum well region is formed of alternating layers of gallium nitride and a nitride selected from the group consisting of indium nitride and aluminum nitride.
Claim 4
Dependent Claim
29 words
A light emitting device in accordance with claim 2 in which the layers of the quantum well region are each of a thickness of between 20 and 60 angstroms.
Claim 5
Dependent Claim
24 words
A light emitting device in accordance with claim 2 in which the quantum well region includes between 1 and 100 of the alternating layers.
Claim 6
Dependent Claim
19 words
A light emitting device in accordance with claim 2 in which the barrier layer is of insulating gallium nitride.
Claim 7
Dependent Claim
25 words
A light emitting device in accordance with claim 5 in which the barrier layer is of gallium nitride doped with zinc to make it insulating.
Claim 8
Dependent Claim
24 words
A light emitting device in accordance with claim 5 in which the barrier layer is of a thickness of between 200 and 500 angstroms.
Claim 9
Dependent Claim
18 words
A light emitting device in accordance with claim 5 in which the P-type layer is of gallium phosphide.
Claim 10
Dependent Claim
33 words
A light emitting device in accordance with claim 2 in which the body has a pair of opposite sides which form a Fabry-Perot cavity to make the device function as an injection laser.
Claim 11
Dependent Claim
26 words
A light emitting device in accordance with claim 2 in which the quantum well region is formed of alternating layers of gallium nitride and indium nitride.
Claim 12
Dependent Claim
26 words
A light emitting device in accordance with claim 2 in which the quantum well region is formed of alternating layers of gallium nitride and aluminum nitride.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |