US4759024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device having an oscillation wavelength in the visible short-wavelength region
Assignee: Sharp Corp
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Filing: 1986-04-21
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Granted: 1988-07-19
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Expires: 2006-04-21
Abstract
Abstract A semiconductor laser device comprises a superlatticed layer which is composed of alternate layers consisting of GAP thin layers and AlP thin layers. The superlatticed layer is formed as an active layer on a GaP substrate. The semiconductor laser device also is composed of two superlatticed cladding layers formed on either side of the active layer. The laser device of the present invention has an oscillation wavelength in the visible short-wavelength region.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:05
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S2302/00; H01S5/34333
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
70 words
A semiconductor laser device comprising: a GaP substrate; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed layer being formed as an active layer on said GaP substrate; and superlatticed cladding layers, each of which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed cladding layers sandwiching said superlatticed active layer therebetween.
Claim 2
Dependent Claim
70 words
A semiconductor laser device comprising: a GaP substrate; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed layer being formed as an active layer on said GaP substrate; and superlatticed cladding layers, each of which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed cladding layers sandwiching said superlatticed active layer therebetween.
Claim 3
Dependent Claim
33 words
A semiconductor laser device according to claim 1, wherein each superlatticed cladding layers is composed of alternate layers consisting of Ga 1-x Al x P thin layers and AlP or GaP thin layers.
Claim 4
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein each superlatticed cladding layers is composed of a Ga 1-x Al x P mixed crystal.
Claim 5
Dependent Claim
144 words
A semiconductor laser device comprising: a GaP substrate; a buffer layer formed on said substrate; a first superlatticed cladding layer composed of alternate superlatticed layers consisting of GaP thin layers, said first cladding layer being and AlP thin layers, said first superlatticed cladding layer being formed on said buffer layer; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed layer being formed as an active layer on said first superlatticed cladding layer; a second superlatticed cladding layer composed of alternate layers consisting of GaP thin layers and AlP thin layers, said first and second superlatticed cladding layers sandwiching said superlatticed active layer therebetween; a cap layer formed on said second cladding layer; and first and second electrodes formed on a back face of said substrate and an upper face of the cap layer.
Claim 6
Dependent Claim
144 words
A semiconductor laser device comprising: a GaP substrate; a buffer layer formed on said substrate; a first superlatticed cladding layer composed of alternate superlatticed layers consisting of GaP thin layers, said first cladding layer being and AlP thin layers, said first superlatticed cladding layer being formed on said buffer layer; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said superlatticed layer being formed as an active layer on said first superlatticed cladding layer; a second superlatticed cladding layer composed of alternate layers consisting of GaP thin layers and AlP thin layers, said first and second superlatticed cladding layers sandwiching said superlatticed active layer therebetween; a cap layer formed on said second cladding layer; and first and second electrodes formed on a back face of said substrate and an upper face of the cap layer.
Claim 7
Dependent Claim
96 words
A semiconductor laser device comprising: a GaP substrate; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said GaP thin layers being twice as thick as said AlP thin layers, said superlatticed layer being formed as an active layer on said GaP substrate; superlatticed cladding layers, each of which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said AlP thin layers being four times as thick as said GaP thin layers, said superlatticed cladding layers sandwiching said superlatticed active layer therebetween.
Claim 8
Dependent Claim
96 words
A semiconductor laser device comprising: a GaP substrate; a superlatticed layer which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said GaP thin layers being twice as thick as said AlP thin layers, said superlatticed layer being formed as an active layer on said GaP substrate; superlatticed cladding layers, each of which is composed of alternate layers consisting of GaP thin layers and AlP thin layers, said AlP thin layers being four times as thick as said GaP thin layers, said superlatticed cladding layers sandwiching said superlatticed active layer therebetween.
References Cited (Backward Citations)
US4644553A
Cited
JPS60130878A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |